CN100459142C - 半导体显示器件、半导体器件和电子设备 - Google Patents

半导体显示器件、半导体器件和电子设备 Download PDF

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Publication number
CN100459142C
CN100459142C CNB2004100877912A CN200410087791A CN100459142C CN 100459142 C CN100459142 C CN 100459142C CN B2004100877912 A CNB2004100877912 A CN B2004100877912A CN 200410087791 A CN200410087791 A CN 200410087791A CN 100459142 C CN100459142 C CN 100459142C
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China
Prior art keywords
wiring
interlayer dielectric
forms
film transistor
terminal
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Expired - Fee Related
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CNB2004100877912A
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English (en)
Chinese (zh)
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CN1617351A (zh
Inventor
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN1617351A publication Critical patent/CN1617351A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB2004100877912A 2003-10-28 2004-10-28 半导体显示器件、半导体器件和电子设备 Expired - Fee Related CN100459142C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP367639/2003 2003-10-28
JP367639/03 2003-10-28
JP2003367639A JP4574158B2 (ja) 2003-10-28 2003-10-28 半導体表示装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2008101816670A Division CN101447492B (zh) 2003-10-28 2004-10-28 半导体显示器件

Publications (2)

Publication Number Publication Date
CN1617351A CN1617351A (zh) 2005-05-18
CN100459142C true CN100459142C (zh) 2009-02-04

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CNB2004100877912A Expired - Fee Related CN100459142C (zh) 2003-10-28 2004-10-28 半导体显示器件、半导体器件和电子设备
CN2008101816670A Expired - Fee Related CN101447492B (zh) 2003-10-28 2004-10-28 半导体显示器件

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CN2008101816670A Expired - Fee Related CN101447492B (zh) 2003-10-28 2004-10-28 半导体显示器件

Country Status (3)

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US (2) US7259429B2 (enExample)
JP (1) JP4574158B2 (enExample)
CN (2) CN100459142C (enExample)

Families Citing this family (49)

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US6753654B2 (en) 2001-02-21 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP4463493B2 (ja) 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
KR101111995B1 (ko) 2003-12-02 2012-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 디스플레이 장치 및 액정 디스플레이장치, 그리고 그 제조방법
US7888702B2 (en) * 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
US8059109B2 (en) * 2005-05-20 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
WO2007058329A1 (en) 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008177466A (ja) * 2007-01-22 2008-07-31 Epson Imaging Devices Corp 表示装置およびその表示装置を備えた電子機器
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101376896B1 (ko) * 2007-11-28 2014-03-20 파나소닉 주식회사 플렉시블 반도체장치의 제조방법 및 플렉시블 반도체장치
EP2073255B1 (en) * 2007-12-21 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Diode and display device comprising the diode
US7923733B2 (en) * 2008-02-07 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5388632B2 (ja) 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
KR20110056542A (ko) * 2008-09-12 2011-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101507324B1 (ko) * 2008-09-19 2015-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101722409B1 (ko) * 2008-09-19 2017-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8224277B2 (en) * 2008-09-26 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101273972B1 (ko) 2008-10-03 2013-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN102460711B (zh) * 2009-06-09 2014-10-08 夏普株式会社 半导体装置
TWI498786B (zh) * 2009-08-24 2015-09-01 Semiconductor Energy Lab 觸控感應器及其驅動方法與顯示裝置
KR101796909B1 (ko) * 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI548057B (zh) * 2011-04-22 2016-09-01 半導體能源研究所股份有限公司 半導體裝置
US8673426B2 (en) * 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US9742378B2 (en) * 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
CN103021943B (zh) * 2012-12-14 2015-07-15 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
JP6146165B2 (ja) * 2013-07-01 2017-06-14 セイコーエプソン株式会社 静電気保護回路、電気光学装置、及び電子機器
CN103441119B (zh) 2013-07-05 2016-03-30 京东方科技集团股份有限公司 一种制造esd器件的方法、esd器件和显示面板
JP6079548B2 (ja) 2013-10-11 2017-02-15 セイコーエプソン株式会社 静電気保護回路、電気光学装置、及び電子機器
JP2014179636A (ja) * 2014-05-01 2014-09-25 Semiconductor Energy Lab Co Ltd 半導体装置
CN106463082B (zh) 2014-06-23 2019-07-16 株式会社半导体能源研究所 显示装置及电子设备
JP2015207779A (ja) * 2015-06-16 2015-11-19 株式会社半導体エネルギー研究所 半導体装置
KR102645930B1 (ko) * 2016-09-29 2024-03-12 엘지디스플레이 주식회사 표시장치
KR102862786B1 (ko) * 2016-12-30 2025-09-22 엘지디스플레이 주식회사 백플레인 기판, 이의 제조 방법 및 이를 적용한 유기 발광 표시 장치
US10784290B1 (en) * 2019-03-01 2020-09-22 Wuhan China Star Optoelectronics Technology Co., Ltd. Method of manufacturing array substrate and array substrate
CN118339660A (zh) * 2021-11-15 2024-07-12 株式会社日本显示器 半导体装置、显示装置及半导体集成电路

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JPH01276766A (ja) * 1988-04-28 1989-11-07 Seiko Epson Corp 薄膜集積回路の製造方法
JPH0980471A (ja) * 1995-09-07 1997-03-28 Sony Corp 液晶表示装置の保護回路
CN1165568A (zh) * 1995-10-03 1997-11-19 精工爱普生株式会社 有源矩阵基板
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Also Published As

Publication number Publication date
JP4574158B2 (ja) 2010-11-04
US7573067B2 (en) 2009-08-11
JP2005135991A (ja) 2005-05-26
US7259429B2 (en) 2007-08-21
CN101447492B (zh) 2011-09-28
CN1617351A (zh) 2005-05-18
US20050087741A1 (en) 2005-04-28
US20070246725A1 (en) 2007-10-25
CN101447492A (zh) 2009-06-03

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