JP2003174145A5 - - Google Patents
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- Publication number
- JP2003174145A5 JP2003174145A5 JP2002224451A JP2002224451A JP2003174145A5 JP 2003174145 A5 JP2003174145 A5 JP 2003174145A5 JP 2002224451 A JP2002224451 A JP 2002224451A JP 2002224451 A JP2002224451 A JP 2002224451A JP 2003174145 A5 JP2003174145 A5 JP 2003174145A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- memory device
- hydrogen barrier
- ferroelectric
- line direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 29
- 229910052739 hydrogen Inorganic materials 0.000 claims 29
- 239000001257 hydrogen Substances 0.000 claims 29
- 239000003990 capacitor Substances 0.000 claims 28
- 230000004888 barrier function Effects 0.000 claims 27
- 239000000956 alloy Substances 0.000 claims 10
- 229910045601 alloy Inorganic materials 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000011229 interlayer Substances 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002224451A JP3962296B2 (ja) | 2001-09-27 | 2002-08-01 | 強誘電体メモリ装置及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001296855 | 2001-09-27 | ||
| JP2001-296855 | 2001-09-27 | ||
| JP2002224451A JP3962296B2 (ja) | 2001-09-27 | 2002-08-01 | 強誘電体メモリ装置及びその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004355243A Division JP4351990B2 (ja) | 2001-09-27 | 2004-12-08 | 強誘電体メモリ装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003174145A JP2003174145A (ja) | 2003-06-20 |
| JP2003174145A5 true JP2003174145A5 (enrdf_load_stackoverflow) | 2005-05-26 |
| JP3962296B2 JP3962296B2 (ja) | 2007-08-22 |
Family
ID=26623091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002224451A Expired - Lifetime JP3962296B2 (ja) | 2001-09-27 | 2002-08-01 | 強誘電体メモリ装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3962296B2 (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4636834B2 (ja) * | 2002-11-13 | 2011-02-23 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| TWI229935B (en) | 2002-11-13 | 2005-03-21 | Matsushita Electric Ind Co Ltd | Semiconductor device and method for fabricating the same |
| JP4549947B2 (ja) * | 2003-05-27 | 2010-09-22 | パナソニック株式会社 | 半導体装置 |
| JP3935475B2 (ja) | 2004-03-18 | 2007-06-20 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| US8552484B2 (en) | 2004-07-02 | 2013-10-08 | Fujitsu Semiconductor Limited | Semiconductor device and method for fabricating the same |
| JP4042730B2 (ja) | 2004-09-02 | 2008-02-06 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
| JP2006108152A (ja) * | 2004-09-30 | 2006-04-20 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
| JP4422644B2 (ja) | 2005-03-30 | 2010-02-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006302987A (ja) * | 2005-04-18 | 2006-11-02 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP4756915B2 (ja) * | 2005-05-31 | 2011-08-24 | Ｏｋｉセミコンダクタ株式会社 | 強誘電体メモリ装置及びその製造方法 |
| KR100973703B1 (ko) | 2005-06-17 | 2010-08-04 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
| JP4557903B2 (ja) * | 2006-02-10 | 2010-10-06 | パナソニック株式会社 | 半導体装置及びその製造方法 |
-
2002
- 2002-08-01 JP JP2002224451A patent/JP3962296B2/ja not_active Expired - Lifetime