JP3962296B2 - 強誘電体メモリ装置及びその製造方法 - Google Patents

強誘電体メモリ装置及びその製造方法 Download PDF

Info

Publication number
JP3962296B2
JP3962296B2 JP2002224451A JP2002224451A JP3962296B2 JP 3962296 B2 JP3962296 B2 JP 3962296B2 JP 2002224451 A JP2002224451 A JP 2002224451A JP 2002224451 A JP2002224451 A JP 2002224451A JP 3962296 B2 JP3962296 B2 JP 3962296B2
Authority
JP
Japan
Prior art keywords
film
hydrogen barrier
barrier film
ferroelectric
line direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002224451A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003174145A5 (enrdf_load_stackoverflow
JP2003174145A (ja
Inventor
貴文 吉川
巧 三河
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2002224451A priority Critical patent/JP3962296B2/ja
Publication of JP2003174145A publication Critical patent/JP2003174145A/ja
Publication of JP2003174145A5 publication Critical patent/JP2003174145A5/ja
Application granted granted Critical
Publication of JP3962296B2 publication Critical patent/JP3962296B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Memories (AREA)
JP2002224451A 2001-09-27 2002-08-01 強誘電体メモリ装置及びその製造方法 Expired - Lifetime JP3962296B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002224451A JP3962296B2 (ja) 2001-09-27 2002-08-01 強誘電体メモリ装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001296855 2001-09-27
JP2001-296855 2001-09-27
JP2002224451A JP3962296B2 (ja) 2001-09-27 2002-08-01 強誘電体メモリ装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004355243A Division JP4351990B2 (ja) 2001-09-27 2004-12-08 強誘電体メモリ装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2003174145A JP2003174145A (ja) 2003-06-20
JP2003174145A5 JP2003174145A5 (enrdf_load_stackoverflow) 2005-05-26
JP3962296B2 true JP3962296B2 (ja) 2007-08-22

Family

ID=26623091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002224451A Expired - Lifetime JP3962296B2 (ja) 2001-09-27 2002-08-01 強誘電体メモリ装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP3962296B2 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4636834B2 (ja) * 2002-11-13 2011-02-23 パナソニック株式会社 半導体装置及びその製造方法
TWI229935B (en) 2002-11-13 2005-03-21 Matsushita Electric Ind Co Ltd Semiconductor device and method for fabricating the same
JP4549947B2 (ja) * 2003-05-27 2010-09-22 パナソニック株式会社 半導体装置
JP3935475B2 (ja) 2004-03-18 2007-06-20 松下電器産業株式会社 半導体装置及びその製造方法
US8552484B2 (en) 2004-07-02 2013-10-08 Fujitsu Semiconductor Limited Semiconductor device and method for fabricating the same
JP4042730B2 (ja) 2004-09-02 2008-02-06 セイコーエプソン株式会社 強誘電体メモリおよびその製造方法
JP2006108152A (ja) * 2004-09-30 2006-04-20 Oki Electric Ind Co Ltd 半導体記憶装置
JP4422644B2 (ja) 2005-03-30 2010-02-24 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2006302987A (ja) * 2005-04-18 2006-11-02 Nec Electronics Corp 半導体装置およびその製造方法
JP4756915B2 (ja) * 2005-05-31 2011-08-24 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリ装置及びその製造方法
KR100973703B1 (ko) 2005-06-17 2010-08-04 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 그 제조 방법
JP4557903B2 (ja) * 2006-02-10 2010-10-06 パナソニック株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2003174145A (ja) 2003-06-20

Similar Documents

Publication Publication Date Title
US7531863B2 (en) Semiconductor device and method of fabricating the same
US7560760B2 (en) Ferroelectric memory devices having expanded plate lines
US6943398B2 (en) Semiconductor device and method for fabricating the same
US6972449B2 (en) Ferroelectric memory having a hydrogen barrier film which continuously covers a plurality of capacitors in a capacitor line
US20060183252A1 (en) Ferroelectric memory devices
JP3657925B2 (ja) 半導体装置及びその製造方法
JP3962296B2 (ja) 強誘電体メモリ装置及びその製造方法
US20020042185A1 (en) Semiconductor integrated circuit device and manufacturing method thereof
KR20030070106A (ko) 반도체장치 및 그 제조방법
JP2009099767A (ja) 半導体記憶装置およびその製造方法
US20040099894A1 (en) Semiconductor device having ferroelectric film and manufacturing method thereof
JP4351990B2 (ja) 強誘電体メモリ装置及びその製造方法
JP2004303995A (ja) 半導体装置の構造およびその製造方法
KR100574534B1 (ko) 반도체장치 및 그 제조방법
JP2005094038A5 (enrdf_load_stackoverflow)
US20080296646A1 (en) Semiconductor memory device and method for fabricating the same
JP2011124478A (ja) 半導体記憶装置及びその製造方法
JP2023112910A (ja) 半導体装置および半導体装置の製造方法
KR100867363B1 (ko) 반도체 장치 및 그 제조 방법
JP2006253194A (ja) 半導体装置およびその製造方法
JP2004296732A (ja) 強誘電体メモリ装置及びその製造方法
JP2007042705A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040730

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041012

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041208

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050411

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20050527

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20050715

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070329

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070518

R150 Certificate of patent or registration of utility model

Ref document number: 3962296

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110525

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110525

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120525

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120525

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130525

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130525

Year of fee payment: 6

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term