JP2005094038A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005094038A5 JP2005094038A5 JP2004355243A JP2004355243A JP2005094038A5 JP 2005094038 A5 JP2005094038 A5 JP 2005094038A5 JP 2004355243 A JP2004355243 A JP 2004355243A JP 2004355243 A JP2004355243 A JP 2004355243A JP 2005094038 A5 JP2005094038 A5 JP 2005094038A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- ferroelectric
- hydrogen barrier
- memory device
- line direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052739 hydrogen Inorganic materials 0.000 claims description 130
- 239000001257 hydrogen Substances 0.000 claims description 130
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 128
- 239000003990 capacitor Substances 0.000 claims description 120
- 230000004888 barrier function Effects 0.000 claims description 102
- 239000011229 interlayer Substances 0.000 claims description 46
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- 229910004349 Ti-Al Inorganic materials 0.000 claims description 4
- 229910004692 Ti—Al Inorganic materials 0.000 claims description 4
- 230000000116 mitigating effect Effects 0.000 claims description 4
- 229910002064 alloy oxide Inorganic materials 0.000 claims description 2
- 230000002040 relaxant effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 19
- 239000010936 titanium Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004355243A JP4351990B2 (ja) | 2001-09-27 | 2004-12-08 | 強誘電体メモリ装置及びその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001296855 | 2001-09-27 | ||
| JP2004355243A JP4351990B2 (ja) | 2001-09-27 | 2004-12-08 | 強誘電体メモリ装置及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002224451A Division JP3962296B2 (ja) | 2001-09-27 | 2002-08-01 | 強誘電体メモリ装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005094038A JP2005094038A (ja) | 2005-04-07 |
| JP2005094038A5 true JP2005094038A5 (enrdf_load_stackoverflow) | 2007-03-15 |
| JP4351990B2 JP4351990B2 (ja) | 2009-10-28 |
Family
ID=34466582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004355243A Expired - Lifetime JP4351990B2 (ja) | 2001-09-27 | 2004-12-08 | 強誘電体メモリ装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4351990B2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5230119B2 (ja) * | 2006-04-28 | 2013-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
-
2004
- 2004-12-08 JP JP2004355243A patent/JP4351990B2/ja not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4025829B2 (ja) | 半導体装置及びその製造方法 | |
| US20080076192A1 (en) | Semiconductor memory device and method of manufacturing the same | |
| US7781812B2 (en) | Semiconductor device for non-volatile memory and method of manufacturing the same | |
| US6717198B2 (en) | Ferroelectric memory | |
| US7507662B2 (en) | Ferroelectric memory and its manufacturing method | |
| US8324671B2 (en) | Semiconductor device and method of manufacturing the same | |
| JP3962296B2 (ja) | 強誘電体メモリ装置及びその製造方法 | |
| US20080020492A1 (en) | Ferroelectric memory and its manufacturing method | |
| JP2010056133A (ja) | 半導体記憶装置 | |
| US20020042185A1 (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
| JP2010225928A (ja) | 半導体記憶装置及びその製造方法 | |
| US20090127602A1 (en) | Semiconductor memory device and manufacturing method thereof | |
| JP3793207B2 (ja) | 強誘電体記憶装置及びその製造方法 | |
| JP4181135B2 (ja) | 半導体記憶装置 | |
| JP4351990B2 (ja) | 強誘電体メモリ装置及びその製造方法 | |
| JP5190198B2 (ja) | 半導体装置及びその製造方法 | |
| US6906908B1 (en) | Semiconductor device and method of manufacturing the same | |
| JP2005094038A5 (enrdf_load_stackoverflow) | ||
| KR100574534B1 (ko) | 반도체장치 및 그 제조방법 | |
| JP2011124478A (ja) | 半導体記憶装置及びその製造方法 | |
| US20080296646A1 (en) | Semiconductor memory device and method for fabricating the same | |
| KR100867363B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| JP2011018709A (ja) | 半導体記憶装置及びその製造方法 | |
| JP2006253194A (ja) | 半導体装置およびその製造方法 | |
| KR20070011273A (ko) | 반도체 장치 및 그 제조 방법 |