JP2003174007A - 基板の真空乾燥方法 - Google Patents

基板の真空乾燥方法

Info

Publication number
JP2003174007A
JP2003174007A JP2001369775A JP2001369775A JP2003174007A JP 2003174007 A JP2003174007 A JP 2003174007A JP 2001369775 A JP2001369775 A JP 2001369775A JP 2001369775 A JP2001369775 A JP 2001369775A JP 2003174007 A JP2003174007 A JP 2003174007A
Authority
JP
Japan
Prior art keywords
substrate
vacuum
water
vacuum drying
drying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001369775A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003174007A5 (enExample
Inventor
Riichiro Harano
理一郎 原野
Toru Watari
徹 亘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUPURAUTO KK
Original Assignee
SUPURAUTO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUPURAUTO KK filed Critical SUPURAUTO KK
Priority to JP2001369775A priority Critical patent/JP2003174007A/ja
Priority to US10/307,809 priority patent/US6725565B2/en
Publication of JP2003174007A publication Critical patent/JP2003174007A/ja
Publication of JP2003174007A5 publication Critical patent/JP2003174007A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P50/283—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H10P50/287—
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
JP2001369775A 2001-12-04 2001-12-04 基板の真空乾燥方法 Pending JP2003174007A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001369775A JP2003174007A (ja) 2001-12-04 2001-12-04 基板の真空乾燥方法
US10/307,809 US6725565B2 (en) 2001-12-04 2002-12-02 Method for vacuum drying of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001369775A JP2003174007A (ja) 2001-12-04 2001-12-04 基板の真空乾燥方法

Publications (2)

Publication Number Publication Date
JP2003174007A true JP2003174007A (ja) 2003-06-20
JP2003174007A5 JP2003174007A5 (enExample) 2005-07-21

Family

ID=19179112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001369775A Pending JP2003174007A (ja) 2001-12-04 2001-12-04 基板の真空乾燥方法

Country Status (2)

Country Link
US (1) US6725565B2 (enExample)
JP (1) JP2003174007A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072601A (ja) * 2003-08-26 2005-03-17 Texas Instruments Inc 多孔質低誘電率材料のエッチング後のクリーニング法
JP2008232567A (ja) * 2007-03-22 2008-10-02 Honda Motor Co Ltd 減圧乾燥方法及び減圧乾燥装置
JP2010536185A (ja) * 2007-08-13 2010-11-25 アルカテル−ルーセント 半導体基板の運搬および大気中保管のための輸送支持具を処理する方法、ならびにそのような方法を実施するための処理ステーション
JP2012132678A (ja) * 2012-04-06 2012-07-12 Act Five Kk 減圧乾燥装置
JP2014523636A (ja) * 2011-05-31 2014-09-11 ラム リサーチ コーポレーション 基板凍結乾燥装置及び方法
US20140273334A1 (en) * 2013-03-15 2014-09-18 First Solar, Inc. Method of manufacturing a photovoltaic device
WO2016208588A1 (ja) * 2015-06-22 2016-12-29 住友化学株式会社 有機電子素子の製造方法及び基板乾燥方法
CN115194640A (zh) * 2022-08-15 2022-10-18 华海清科股份有限公司 一种化学机械抛光系统及抛光方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454241B1 (ko) * 2001-12-28 2004-10-26 한국디엔에스 주식회사 웨이퍼 건조 장비
US20050285313A1 (en) * 2004-06-24 2005-12-29 Ward Phillip D Gel/cure unit
JP4254720B2 (ja) * 2005-02-04 2009-04-15 セイコーエプソン株式会社 絶縁化処理前基板、および基板の製造方法
JP4527670B2 (ja) 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
US7976372B2 (en) * 2007-11-09 2011-07-12 Igt Gaming system having multiple player simultaneous display/input device
KR100859975B1 (ko) 2008-02-20 2008-09-25 씨디에스(주) 다단 진공 건조 장치
US8226343B2 (en) * 2008-10-31 2012-07-24 Brian Weeks Apparatus and methods for loading and transporting containers
TWI450324B (zh) * 2010-01-25 2014-08-21 家登精密工業股份有限公司 微影設備之光罩清潔方法及微影設備之光罩清潔系統
JP5702957B2 (ja) * 2010-06-25 2015-04-15 株式会社ミヤコシ ドラム式乾燥装置
JP2012174819A (ja) * 2011-02-21 2012-09-10 Sokudo Co Ltd 熱処理装置および熱処理方法
US8967935B2 (en) * 2011-07-06 2015-03-03 Tel Nexx, Inc. Substrate loader and unloader
GB2509022B (en) * 2011-09-07 2018-01-31 Parker Hannifin Corp Analytical system and method for detecting volatile organic compounds in water
WO2016196911A1 (en) 2015-06-05 2016-12-08 Parker-Hannifin Corporation Analysis system and method for detecting volatile organic compounds in liquid
JP7396207B2 (ja) * 2020-06-03 2023-12-12 トヨタ自動車株式会社 電極板乾燥装置
CN114777427B (zh) * 2022-05-10 2023-11-17 星恒电源股份有限公司 一种方形叠片锂离子电池电芯的干燥方法
CN117647068A (zh) * 2023-11-22 2024-03-05 航天科工防御技术研究试验中心 电子器件去湿装置及方法
CN118640649B (zh) * 2024-08-14 2025-02-25 常州苏兴电气有限责任公司 一种防泄露的油浸式变压器真空干燥装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6276072B1 (en) * 1997-07-10 2001-08-21 Applied Materials, Inc. Method and apparatus for heating and cooling substrates
JP3396431B2 (ja) * 1998-08-10 2003-04-14 東京エレクトロン株式会社 酸化処理方法および酸化処理装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072601A (ja) * 2003-08-26 2005-03-17 Texas Instruments Inc 多孔質低誘電率材料のエッチング後のクリーニング法
JP2008232567A (ja) * 2007-03-22 2008-10-02 Honda Motor Co Ltd 減圧乾燥方法及び減圧乾燥装置
JP2010536185A (ja) * 2007-08-13 2010-11-25 アルカテル−ルーセント 半導体基板の運搬および大気中保管のための輸送支持具を処理する方法、ならびにそのような方法を実施するための処理ステーション
JP2013070097A (ja) * 2007-08-13 2013-04-18 Alcatel-Lucent 半導体基板の運搬および大気中保管のための輸送支持具を処理する方法、ならびにそのような方法を実施するための処理ステーション
JP2014523636A (ja) * 2011-05-31 2014-09-11 ラム リサーチ コーポレーション 基板凍結乾燥装置及び方法
JP2012132678A (ja) * 2012-04-06 2012-07-12 Act Five Kk 減圧乾燥装置
US20140273334A1 (en) * 2013-03-15 2014-09-18 First Solar, Inc. Method of manufacturing a photovoltaic device
US9450115B2 (en) * 2013-03-15 2016-09-20 First Solar, Inc. Method of manufacturing a photovoltaic device
WO2016208588A1 (ja) * 2015-06-22 2016-12-29 住友化学株式会社 有機電子素子の製造方法及び基板乾燥方法
CN115194640A (zh) * 2022-08-15 2022-10-18 华海清科股份有限公司 一种化学机械抛光系统及抛光方法

Also Published As

Publication number Publication date
US6725565B2 (en) 2004-04-27
US20030115770A1 (en) 2003-06-26

Similar Documents

Publication Publication Date Title
JP2003174007A (ja) 基板の真空乾燥方法
JP5022534B2 (ja) 外部のステージング領域を有するロードロック
KR100810163B1 (ko) 반도체 장치의 제조 방법, 기판 처리 시스템 및 기록 매체
KR101966808B1 (ko) 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치
JP6966899B2 (ja) 基板乾燥方法および基板処理装置
JP2015092539A (ja) 基板処理装置及び基板処理方法
KR102006552B1 (ko) 기판 처리 방법 및 기판 처리 장치
JP5155035B2 (ja) 基板処理装置および基板処理方法
JP2009188411A (ja) シリル化処理方法、シリル化処理装置およびエッチング処理システム
JP2006086411A (ja) 基板処理装置
KR102649167B1 (ko) 기판 처리 장치 및 기판 처리 방법
JP2003059894A (ja) 基板処理装置
KR20190043181A (ko) 기판 처리 장치 및 기판 처리 방법
JP2020136313A (ja) 基板処理方法および基板処理装置
JP2005353978A (ja) シリル化処理装置およびシリル化処理方法
US20060144420A1 (en) Apparatus and method for manufacturing semiconductor device
JP2004214388A (ja) 基板処理方法
JP2004335840A (ja) 基板からの水分除去装置及び水分除去方法
JP2004031750A (ja) 基板処理装置および基板処理方法
JP4080272B2 (ja) 基板処理方法
JP4433570B2 (ja) 基板処理装置及び基板処理方法
JP3126859B2 (ja) 基板の表面処理装置
JP2002043305A (ja) 成膜装置及び成膜方法
JP2018160614A (ja) 基板処理装置および基板処理方法
JP2006049408A (ja) 基板洗浄装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041202

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20051205

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070723

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070921

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20071029