JP2003094397A5 - - Google Patents

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Publication number
JP2003094397A5
JP2003094397A5 JP2002146878A JP2002146878A JP2003094397A5 JP 2003094397 A5 JP2003094397 A5 JP 2003094397A5 JP 2002146878 A JP2002146878 A JP 2002146878A JP 2002146878 A JP2002146878 A JP 2002146878A JP 2003094397 A5 JP2003094397 A5 JP 2003094397A5
Authority
JP
Japan
Prior art keywords
wafer
depositing
protective layer
processing
rotor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002146878A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003094397A (ja
JP4064151B2 (ja
Filing date
Publication date
Priority claimed from US09/860,453 external-priority patent/US6436794B1/en
Application filed filed Critical
Publication of JP2003094397A publication Critical patent/JP2003094397A/ja
Publication of JP2003094397A5 publication Critical patent/JP2003094397A5/ja
Application granted granted Critical
Publication of JP4064151B2 publication Critical patent/JP4064151B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002146878A 2001-05-21 2002-05-21 Arsシステムを製造する方法 Expired - Fee Related JP4064151B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US860453 1977-12-14
US09/860,453 US6436794B1 (en) 2001-05-21 2001-05-21 Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer

Publications (3)

Publication Number Publication Date
JP2003094397A JP2003094397A (ja) 2003-04-03
JP2003094397A5 true JP2003094397A5 (enExample) 2005-04-07
JP4064151B2 JP4064151B2 (ja) 2008-03-19

Family

ID=25333259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002146878A Expired - Fee Related JP4064151B2 (ja) 2001-05-21 2002-05-21 Arsシステムを製造する方法

Country Status (4)

Country Link
US (1) US6436794B1 (enExample)
EP (1) EP1260481A3 (enExample)
JP (1) JP4064151B2 (enExample)
CN (1) CN1387250A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU695236B2 (en) * 1994-10-20 1998-08-13 Matsushita Electric Industrial Co., Ltd. High-frequency heating device
US6621096B2 (en) * 2001-05-21 2003-09-16 Hewlett-Packard Develpoment Company, L.P. Device isolation process flow for ARS system
US20040124538A1 (en) * 2002-12-31 2004-07-01 Rafael Reif Multi-layer integrated semiconductor structure
WO2004061961A1 (en) * 2002-12-31 2004-07-22 Massachusetts Institute Of Technology Multi-layer integrated semiconductor structure having an electrical shielding portion
US7064055B2 (en) * 2002-12-31 2006-06-20 Massachusetts Institute Of Technology Method of forming a multi-layer semiconductor structure having a seamless bonding interface
US7161875B2 (en) 2003-06-12 2007-01-09 Hewlett-Packard Development Company, L.P. Thermal-assisted magnetic memory storage device
US6819587B1 (en) 2003-06-12 2004-11-16 Hewlett-Packard Development Company, L.P. Thermal-assisted nanotip magnetic memory storage device
US6885582B2 (en) 2003-06-12 2005-04-26 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US6930368B2 (en) * 2003-07-31 2005-08-16 Hewlett-Packard Development Company, L.P. MEMS having a three-wafer structure
US7423954B2 (en) * 2003-12-17 2008-09-09 Hewlett-Packard Development Company, L.P. Contact probe storage sensor pod
US7436753B2 (en) 2003-12-17 2008-10-14 Mejia Robert G Contact probe storage FET sensor
US7808061B2 (en) * 2006-07-28 2010-10-05 Hewlett-Packard Development Company, L.P. Multi-die apparatus including moveable portions
CN105293419B (zh) * 2015-10-15 2016-12-07 华东光电集成器件研究所 一种防止悬浮层刻蚀损伤的mems器件
JP6341959B2 (ja) 2016-05-27 2018-06-13 浜松ホトニクス株式会社 ファブリペロー干渉フィルタの製造方法
CN109196405B (zh) 2016-05-27 2021-09-10 浜松光子学株式会社 法布里-帕罗干涉滤光器的制造方法
KR102508597B1 (ko) 2016-08-24 2023-03-13 하마마츠 포토닉스 가부시키가이샤 패브리 페로 간섭 필터
CN110797315B (zh) * 2019-11-06 2021-06-11 烟台睿创微纳技术股份有限公司 一种晶圆级封装分割方法及晶圆级封装器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472608A (ja) * 1990-05-18 1992-03-06 Toshiba Corp 化合物半導体ウェハの製造方法および製造装置
TW289837B (enExample) 1994-01-18 1996-11-01 Hwelett Packard Co
US5472914A (en) * 1994-07-14 1995-12-05 The United States Of America As Represented By The Secretary Of The Air Force Wafer joined optoelectronic integrated circuits and method
KR960009074A (ko) * 1994-08-29 1996-03-22 모리시다 요이치 반도체 장치 및 그 제조방법
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
JPH08316145A (ja) * 1995-05-12 1996-11-29 Fuji Electric Co Ltd 半導体薄膜の成膜方法
US5807783A (en) * 1996-10-07 1998-09-15 Harris Corporation Surface mount die by handle replacement
US6411589B1 (en) * 1998-07-29 2002-06-25 Hewlett-Packard Company System and method for forming electrostatically actuated data storage mechanisms
US6346459B1 (en) * 1999-02-05 2002-02-12 Silicon Wafer Technologies, Inc. Process for lift off and transfer of semiconductor devices onto an alien substrate
JP2001102523A (ja) * 1999-09-28 2001-04-13 Sony Corp 薄膜デバイスおよびその製造方法

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