JP2003094398A5 - - Google Patents

Download PDF

Info

Publication number
JP2003094398A5
JP2003094398A5 JP2002146879A JP2002146879A JP2003094398A5 JP 2003094398 A5 JP2003094398 A5 JP 2003094398A5 JP 2002146879 A JP2002146879 A JP 2002146879A JP 2002146879 A JP2002146879 A JP 2002146879A JP 2003094398 A5 JP2003094398 A5 JP 2003094398A5
Authority
JP
Japan
Prior art keywords
wafer
manufacturing
protective layer
depositing
handle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002146879A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003094398A (ja
Filing date
Publication date
Priority claimed from US09/860,452 external-priority patent/US6440820B1/en
Application filed filed Critical
Publication of JP2003094398A publication Critical patent/JP2003094398A/ja
Publication of JP2003094398A5 publication Critical patent/JP2003094398A5/ja
Pending legal-status Critical Current

Links

JP2002146879A 2001-05-21 2002-05-21 Ａｒｓシステムを製造する方法 Pending JP2003094398A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/860,452 US6440820B1 (en) 2001-05-21 2001-05-21 Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer
US860452 2001-05-21

Publications (2)

Publication Number Publication Date
JP2003094398A JP2003094398A (ja) 2003-04-03
JP2003094398A5 true JP2003094398A5 (enExample) 2005-10-06

Family

ID=25333256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002146879A Pending JP2003094398A (ja) 2001-05-21 2002-05-21 Ａｒｓシステムを製造する方法

Country Status (4)

Country Link
US (1) US6440820B1 (enExample)
EP (1) EP1261023A3 (enExample)
JP (1) JP2003094398A (enExample)
CN (1) CN1387251A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621096B2 (en) * 2001-05-21 2003-09-16 Hewlett-Packard Develpoment Company, L.P. Device isolation process flow for ARS system
ITTO20030269A1 (it) * 2003-04-08 2004-10-09 St Microelectronics Srl Procedimento per la fabbricazione di un dispositivo
US6819587B1 (en) 2003-06-12 2004-11-16 Hewlett-Packard Development Company, L.P. Thermal-assisted nanotip magnetic memory storage device
US7161875B2 (en) 2003-06-12 2007-01-09 Hewlett-Packard Development Company, L.P. Thermal-assisted magnetic memory storage device
US6885582B2 (en) 2003-06-12 2005-04-26 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US6930368B2 (en) * 2003-07-31 2005-08-16 Hewlett-Packard Development Company, L.P. MEMS having a three-wafer structure
US6936524B2 (en) * 2003-11-05 2005-08-30 Akustica, Inc. Ultrathin form factor MEMS microphones and microspeakers
US7436753B2 (en) 2003-12-17 2008-10-14 Mejia Robert G Contact probe storage FET sensor
US7423954B2 (en) * 2003-12-17 2008-09-09 Hewlett-Packard Development Company, L.P. Contact probe storage sensor pod
US7808061B2 (en) * 2006-07-28 2010-10-05 Hewlett-Packard Development Company, L.P. Multi-die apparatus including moveable portions
US8637961B2 (en) * 2010-11-15 2014-01-28 DigitalOptics Corporation MEMS MEMS actuator device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472608A (ja) * 1990-05-18 1992-03-06 Toshiba Corp 化合物半導体ウェハの製造方法および製造装置
TW289837B (enExample) 1994-01-18 1996-11-01 Hwelett Packard Co
US5472914A (en) * 1994-07-14 1995-12-05 The United States Of America As Represented By The Secretary Of The Air Force Wafer joined optoelectronic integrated circuits and method
KR960009074A (ko) * 1994-08-29 1996-03-22 모리시다 요이치 반도체 장치 및 그 제조방법
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
JPH08316145A (ja) * 1995-05-12 1996-11-29 Fuji Electric Co Ltd 半導体薄膜の成膜方法
US5807783A (en) * 1996-10-07 1998-09-15 Harris Corporation Surface mount die by handle replacement
US6411589B1 (en) * 1998-07-29 2002-06-25 Hewlett-Packard Company System and method for forming electrostatically actuated data storage mechanisms
US6346459B1 (en) * 1999-02-05 2002-02-12 Silicon Wafer Technologies, Inc. Process for lift off and transfer of semiconductor devices onto an alien substrate
JP2001102523A (ja) * 1999-09-28 2001-04-13 Sony Corp 薄膜デバイスおよびその製造方法

Similar Documents

Publication Publication Date Title
CN111524795B (zh) 自对准双重图形化方法及其形成的半导体结构
JP2003094398A5 (enExample)
JP2003094397A5 (enExample)
CN112039461B (zh) 体声波谐振器的制造方法
JP2000269213A5 (enExample)
JP2002313757A5 (enExample)
US8222069B2 (en) Image sensor and manufacturing method for same
JP4064151B2 (ja) Ａｒｓシステムを製造する方法
CN112039457B (zh) 薄膜体声波谐振器的制作方法
JP2004534375A (ja) パケージ集積回路およびその製造方法
CN117013984B (zh) 一种键合晶圆及薄膜声表面波器件
JP2003094398A (ja) Ａｒｓシステムを製造する方法
CN113942973B (zh) 形成微机电系统结构的方法
CN114301413A (zh) 空腔型倒置声波器件及其制备方法
JP2892337B2 (ja) 半導体素子の金属配線製造方法
JP4465090B2 (ja) マスク部材の製造方法
US8796110B2 (en) Method for handling a thin substrate and for substrate capping
CN115701214B (zh) 位元线结构的制作方法及数据存储阵列的制作方法
JPH11195947A (ja) 弾性表面波装置の製造方法
KR20010004803A (ko) 반도체소자의 금속배선 형성방법
TW202538842A (zh) 形成半導體結構之方法
WO2025211218A1 (ja) 接合体の製造方法
TW415013B (en) Method for fabricating shallow trench isolation capable of reducing the residues
JP2009212463A (ja) 光電変換装置の製造方法
JP2003031581A (ja) 半導体装置及びその製造方法