CN1387251A - 利用硒化晶片接合的用于原子分辨率存储移动器的加工方法 - Google Patents

利用硒化晶片接合的用于原子分辨率存储移动器的加工方法 Download PDF

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Publication number
CN1387251A
CN1387251A CN02120306.7A CN02120306A CN1387251A CN 1387251 A CN1387251 A CN 1387251A CN 02120306 A CN02120306 A CN 02120306A CN 1387251 A CN1387251 A CN 1387251A
Authority
CN
China
Prior art keywords
wafer
rotor
processing
protective layer
stator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02120306.7A
Other languages
English (en)
Chinese (zh)
Inventor
H·李
C·C·杨
P·哈特维尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1387251A publication Critical patent/CN1387251A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques

Landscapes

  • Micromachines (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN02120306.7A 2001-05-21 2002-05-21 利用硒化晶片接合的用于原子分辨率存储移动器的加工方法 Pending CN1387251A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/860,452 US6440820B1 (en) 2001-05-21 2001-05-21 Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer
US09/860452 2001-05-21

Publications (1)

Publication Number Publication Date
CN1387251A true CN1387251A (zh) 2002-12-25

Family

ID=25333256

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02120306.7A Pending CN1387251A (zh) 2001-05-21 2002-05-21 利用硒化晶片接合的用于原子分辨率存储移动器的加工方法

Country Status (4)

Country Link
US (1) US6440820B1 (enExample)
EP (1) EP1261023A3 (enExample)
JP (1) JP2003094398A (enExample)
CN (1) CN1387251A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621096B2 (en) * 2001-05-21 2003-09-16 Hewlett-Packard Develpoment Company, L.P. Device isolation process flow for ARS system
ITTO20030269A1 (it) * 2003-04-08 2004-10-09 St Microelectronics Srl Procedimento per la fabbricazione di un dispositivo
US6819587B1 (en) 2003-06-12 2004-11-16 Hewlett-Packard Development Company, L.P. Thermal-assisted nanotip magnetic memory storage device
US7161875B2 (en) 2003-06-12 2007-01-09 Hewlett-Packard Development Company, L.P. Thermal-assisted magnetic memory storage device
US6885582B2 (en) 2003-06-12 2005-04-26 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US6930368B2 (en) * 2003-07-31 2005-08-16 Hewlett-Packard Development Company, L.P. MEMS having a three-wafer structure
US6936524B2 (en) * 2003-11-05 2005-08-30 Akustica, Inc. Ultrathin form factor MEMS microphones and microspeakers
US7436753B2 (en) 2003-12-17 2008-10-14 Mejia Robert G Contact probe storage FET sensor
US7423954B2 (en) * 2003-12-17 2008-09-09 Hewlett-Packard Development Company, L.P. Contact probe storage sensor pod
US7808061B2 (en) * 2006-07-28 2010-10-05 Hewlett-Packard Development Company, L.P. Multi-die apparatus including moveable portions
US8637961B2 (en) * 2010-11-15 2014-01-28 DigitalOptics Corporation MEMS MEMS actuator device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472608A (ja) * 1990-05-18 1992-03-06 Toshiba Corp 化合物半導体ウェハの製造方法および製造装置
TW289837B (enExample) 1994-01-18 1996-11-01 Hwelett Packard Co
US5472914A (en) * 1994-07-14 1995-12-05 The United States Of America As Represented By The Secretary Of The Air Force Wafer joined optoelectronic integrated circuits and method
KR960009074A (ko) * 1994-08-29 1996-03-22 모리시다 요이치 반도체 장치 및 그 제조방법
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
JPH08316145A (ja) * 1995-05-12 1996-11-29 Fuji Electric Co Ltd 半導体薄膜の成膜方法
US5807783A (en) * 1996-10-07 1998-09-15 Harris Corporation Surface mount die by handle replacement
US6411589B1 (en) * 1998-07-29 2002-06-25 Hewlett-Packard Company System and method for forming electrostatically actuated data storage mechanisms
US6346459B1 (en) * 1999-02-05 2002-02-12 Silicon Wafer Technologies, Inc. Process for lift off and transfer of semiconductor devices onto an alien substrate
JP2001102523A (ja) * 1999-09-28 2001-04-13 Sony Corp 薄膜デバイスおよびその製造方法

Also Published As

Publication number Publication date
US6440820B1 (en) 2002-08-27
JP2003094398A (ja) 2003-04-03
EP1261023A3 (en) 2003-12-03
EP1261023A2 (en) 2002-11-27

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