CN1237397C - 用于ars系统的器件隔离工艺流程 - Google Patents
用于ars系统的器件隔离工艺流程 Download PDFInfo
- Publication number
- CN1237397C CN1237397C CNB021203032A CN02120303A CN1237397C CN 1237397 C CN1237397 C CN 1237397C CN B021203032 A CNB021203032 A CN B021203032A CN 02120303 A CN02120303 A CN 02120303A CN 1237397 C CN1237397 C CN 1237397C
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- phase change
- wafer
- active silicon
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- Expired - Lifetime
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000008569 process Effects 0.000 title claims abstract description 32
- 230000008859 change Effects 0.000 claims abstract description 45
- 238000002955 isolation Methods 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- 239000010703 silicon Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- -1 oxonium ion Chemical class 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 63
- 239000000463 material Substances 0.000 description 9
- 239000002178 crystalline material Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000012782 phase change material Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000007516 brønsted-lowry acids Chemical class 0.000 description 1
- 150000007528 brønsted-lowry bases Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1409—Heads
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/723—On an electrically insulating substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/860,524 US6621096B2 (en) | 2001-05-21 | 2001-05-21 | Device isolation process flow for ARS system |
US09/860524 | 2001-05-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1387088A CN1387088A (zh) | 2002-12-25 |
CN1237397C true CN1237397C (zh) | 2006-01-18 |
Family
ID=25333407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021203032A Expired - Lifetime CN1237397C (zh) | 2001-05-21 | 2002-05-21 | 用于ars系统的器件隔离工艺流程 |
Country Status (4)
Country | Link |
---|---|
US (3) | US6621096B2 (zh) |
EP (1) | EP1261024A3 (zh) |
JP (1) | JP2003062800A (zh) |
CN (1) | CN1237397C (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7260051B1 (en) | 1998-12-18 | 2007-08-21 | Nanochip, Inc. | Molecular memory medium and molecular memory integrated circuit |
US20020138301A1 (en) * | 2001-03-22 | 2002-09-26 | Thanos Karras | Integration of a portal into an application service provider data archive and/or web based viewer |
US7068582B2 (en) * | 2002-09-30 | 2006-06-27 | The Regents Of The University Of California | Read head for ultra-high-density information storage media and method for making the same |
US7233517B2 (en) * | 2002-10-15 | 2007-06-19 | Nanochip, Inc. | Atomic probes and media for high density data storage |
ITTO20030269A1 (it) | 2003-04-08 | 2004-10-09 | St Microelectronics Srl | Procedimento per la fabbricazione di un dispositivo |
US6885582B2 (en) | 2003-06-12 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Magnetic memory storage device |
US6819587B1 (en) | 2003-06-12 | 2004-11-16 | Hewlett-Packard Development Company, L.P. | Thermal-assisted nanotip magnetic memory storage device |
US7161875B2 (en) | 2003-06-12 | 2007-01-09 | Hewlett-Packard Development Company, L.P. | Thermal-assisted magnetic memory storage device |
US20050017624A1 (en) * | 2003-07-23 | 2005-01-27 | Thomas Novet | Electron emitter with epitaxial layers |
US20050171088A1 (en) * | 2004-01-30 | 2005-08-04 | Astrazeneca Ab | Treatment of psychoses with dibenzothiazepine antipsychotic |
US20050243660A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | Methods for erasing bit cells in a high density data storage device |
US20050243592A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | High density data storage device having eraseable bit cells |
US7133322B2 (en) * | 2004-06-28 | 2006-11-07 | Hewlett-Packard Development Company, L.P. | Probe storage device |
KR100612906B1 (ko) * | 2004-08-02 | 2006-08-14 | 삼성전자주식회사 | 상변화 기억 소자의 형성 방법 |
KR100566699B1 (ko) * | 2004-08-17 | 2006-04-03 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
US20060212978A1 (en) * | 2005-03-15 | 2006-09-21 | Sarah Brandenberger | Apparatus and method for reading bit values using microprobe on a cantilever |
US7463573B2 (en) * | 2005-06-24 | 2008-12-09 | Nanochip, Inc. | Patterned media for a high density data storage device |
US20070041237A1 (en) * | 2005-07-08 | 2007-02-22 | Nanochip, Inc. | Media for writing highly resolved domains |
US20070008867A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with a lubricant layer comprised of a field of polymer chains |
US20070008865A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with polarity-dependent memory switching media |
US20070008866A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | Methods for writing and reading in a polarity-dependent memory switch media |
US8062833B2 (en) * | 2005-12-30 | 2011-11-22 | Macronix International Co., Ltd. | Chalcogenide layer etching method |
US20080001075A1 (en) * | 2006-06-15 | 2008-01-03 | Nanochip, Inc. | Memory stage for a probe storage device |
US7808061B2 (en) * | 2006-07-28 | 2010-10-05 | Hewlett-Packard Development Company, L.P. | Multi-die apparatus including moveable portions |
US20080175033A1 (en) * | 2007-01-19 | 2008-07-24 | Nanochip, Inc. | Method and system for improving domain stability in a ferroelectric media |
US20080233672A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Method of integrating mems structures and cmos structures using oxide fusion bonding |
US8000129B2 (en) | 2007-12-19 | 2011-08-16 | Contour Semiconductor, Inc. | Field-emitter-based memory array with phase-change storage devices |
US8455298B2 (en) | 2008-08-18 | 2013-06-04 | Contour Semiconductor, Inc. | Method for forming self-aligned phase-change semiconductor diode memory |
US8773881B2 (en) | 2009-03-10 | 2014-07-08 | Contour Semiconductor, Inc. | Vertical switch three-dimensional memory array |
US8445316B2 (en) * | 2011-06-17 | 2013-05-21 | International Business Machines Corporation | Non-lithographic method of patterning contacts for a photovoltaic device |
US9349562B2 (en) | 2011-12-29 | 2016-05-24 | Elwha Llc | Field emission device with AC output |
US9171690B2 (en) * | 2011-12-29 | 2015-10-27 | Elwha Llc | Variable field emission device |
US9018861B2 (en) | 2011-12-29 | 2015-04-28 | Elwha Llc | Performance optimization of a field emission device |
US9646798B2 (en) | 2011-12-29 | 2017-05-09 | Elwha Llc | Electronic device graphene grid |
US9627168B2 (en) | 2011-12-30 | 2017-04-18 | Elwha Llc | Field emission device with nanotube or nanowire grid |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3641510A (en) * | 1970-01-02 | 1972-02-08 | Gen Electric | Beam addressable mass storage using thin film with bistable electrical conductivity |
US4818717A (en) * | 1986-06-27 | 1989-04-04 | Energy Conversion Devices, Inc. | Method for making electronic matrix arrays |
JP2830977B2 (ja) * | 1989-12-29 | 1998-12-02 | キヤノン株式会社 | 記録媒体とそれを用いる記録方法及び記録・再生装置 |
JP3134344B2 (ja) | 1991-05-17 | 2001-02-13 | 日本電気株式会社 | 半導体装置 |
US5584739A (en) * | 1993-02-10 | 1996-12-17 | Futaba Denshi Kogyo K.K | Field emission element and process for manufacturing same |
US5378182A (en) * | 1993-07-22 | 1995-01-03 | Industrial Technology Research Institute | Self-aligned process for gated field emitters |
US5557596A (en) * | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
JPH08293543A (ja) | 1995-04-25 | 1996-11-05 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6081246A (en) * | 1996-11-12 | 2000-06-27 | Micron Technology, Inc. | Method and apparatus for adjustment of FED image |
TW391022B (en) * | 1997-10-29 | 2000-05-21 | Mitsubishi Rayon Co | Field emission electron source, method of producing the same, and use of the same |
US6175122B1 (en) * | 1998-01-09 | 2001-01-16 | International Business Machines Corporation | Method for writing a pattern using multiple variable shaped electron beams |
KR100253406B1 (ko) | 1998-01-20 | 2000-04-15 | 김영환 | 반도체 파워 집적회로에서의 소자격리구조 및 그 방법 |
US6411589B1 (en) * | 1998-07-29 | 2002-06-25 | Hewlett-Packard Company | System and method for forming electrostatically actuated data storage mechanisms |
US6204521B1 (en) * | 1998-08-28 | 2001-03-20 | Micron Technology, Inc. | Thin film transistors |
KR100289372B1 (ko) * | 1999-03-10 | 2001-05-02 | 김영환 | 폴리사이드 형성방법 |
US6440820B1 (en) * | 2001-05-21 | 2002-08-27 | Hewlett Packard Company | Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer |
US6436794B1 (en) * | 2001-05-21 | 2002-08-20 | Hewlett-Packard Company | Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer |
US6576318B2 (en) * | 2001-06-05 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device |
-
2001
- 2001-05-21 US US09/860,524 patent/US6621096B2/en not_active Expired - Lifetime
-
2002
- 2002-05-01 EP EP02253082A patent/EP1261024A3/en not_active Withdrawn
- 2002-05-21 JP JP2002145729A patent/JP2003062800A/ja active Pending
- 2002-05-21 CN CNB021203032A patent/CN1237397C/zh not_active Expired - Lifetime
- 2002-10-03 US US10/264,569 patent/US6664193B2/en not_active Expired - Lifetime
-
2003
- 2003-06-10 US US10/459,177 patent/US20030207575A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20030032290A1 (en) | 2003-02-13 |
US20030207575A1 (en) | 2003-11-06 |
US6621096B2 (en) | 2003-09-16 |
EP1261024A3 (en) | 2003-11-26 |
EP1261024A2 (en) | 2002-11-27 |
CN1387088A (zh) | 2002-12-25 |
US6664193B2 (en) | 2003-12-16 |
JP2003062800A (ja) | 2003-03-05 |
US20020173153A1 (en) | 2002-11-21 |
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