JP2003094398A - Ａｒｓシステムを製造する方法 - Google Patents
Ａｒｓシステムを製造する方法Info
- Publication number
- JP2003094398A JP2003094398A JP2002146879A JP2002146879A JP2003094398A JP 2003094398 A JP2003094398 A JP 2003094398A JP 2002146879 A JP2002146879 A JP 2002146879A JP 2002146879 A JP2002146879 A JP 2002146879A JP 2003094398 A JP2003094398 A JP 2003094398A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- rotor
- stator
- layer
- ars
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title abstract description 39
- 239000011241 protective layer Substances 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 200
- 230000008569 process Effects 0.000 abstract description 20
- 238000003860 storage Methods 0.000 abstract description 16
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 51
- 238000010586 diagram Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 241000183290 Scleropages leichardti Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q80/00—Applications, other than SPM, of scanning-probe techniques
Landscapes
- Micromachines (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/860,452 US6440820B1 (en) | 2001-05-21 | 2001-05-21 | Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer |
| US860452 | 2001-05-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003094398A true JP2003094398A (ja) | 2003-04-03 |
| JP2003094398A5 JP2003094398A5 (enExample) | 2005-10-06 |
Family
ID=25333256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002146879A Pending JP2003094398A (ja) | 2001-05-21 | 2002-05-21 | Ａｒｓシステムを製造する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6440820B1 (enExample) |
| EP (1) | EP1261023A3 (enExample) |
| JP (1) | JP2003094398A (enExample) |
| CN (1) | CN1387251A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621096B2 (en) * | 2001-05-21 | 2003-09-16 | Hewlett-Packard Develpoment Company, L.P. | Device isolation process flow for ARS system |
| ITTO20030269A1 (it) * | 2003-04-08 | 2004-10-09 | St Microelectronics Srl | Procedimento per la fabbricazione di un dispositivo |
| US6819587B1 (en) | 2003-06-12 | 2004-11-16 | Hewlett-Packard Development Company, L.P. | Thermal-assisted nanotip magnetic memory storage device |
| US7161875B2 (en) | 2003-06-12 | 2007-01-09 | Hewlett-Packard Development Company, L.P. | Thermal-assisted magnetic memory storage device |
| US6885582B2 (en) | 2003-06-12 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Magnetic memory storage device |
| US6930368B2 (en) * | 2003-07-31 | 2005-08-16 | Hewlett-Packard Development Company, L.P. | MEMS having a three-wafer structure |
| US6936524B2 (en) * | 2003-11-05 | 2005-08-30 | Akustica, Inc. | Ultrathin form factor MEMS microphones and microspeakers |
| US7436753B2 (en) | 2003-12-17 | 2008-10-14 | Mejia Robert G | Contact probe storage FET sensor |
| US7423954B2 (en) * | 2003-12-17 | 2008-09-09 | Hewlett-Packard Development Company, L.P. | Contact probe storage sensor pod |
| US7808061B2 (en) * | 2006-07-28 | 2010-10-05 | Hewlett-Packard Development Company, L.P. | Multi-die apparatus including moveable portions |
| US8637961B2 (en) * | 2010-11-15 | 2014-01-28 | DigitalOptics Corporation MEMS | MEMS actuator device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472608A (ja) * | 1990-05-18 | 1992-03-06 | Toshiba Corp | 化合物半導体ウェハの製造方法および製造装置 |
| TW289837B (enExample) | 1994-01-18 | 1996-11-01 | Hwelett Packard Co | |
| US5472914A (en) * | 1994-07-14 | 1995-12-05 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer joined optoelectronic integrated circuits and method |
| KR960009074A (ko) * | 1994-08-29 | 1996-03-22 | 모리시다 요이치 | 반도체 장치 및 그 제조방법 |
| US5557596A (en) | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
| JPH08316145A (ja) * | 1995-05-12 | 1996-11-29 | Fuji Electric Co Ltd | 半導体薄膜の成膜方法 |
| US5807783A (en) * | 1996-10-07 | 1998-09-15 | Harris Corporation | Surface mount die by handle replacement |
| US6411589B1 (en) * | 1998-07-29 | 2002-06-25 | Hewlett-Packard Company | System and method for forming electrostatically actuated data storage mechanisms |
| US6346459B1 (en) * | 1999-02-05 | 2002-02-12 | Silicon Wafer Technologies, Inc. | Process for lift off and transfer of semiconductor devices onto an alien substrate |
| JP2001102523A (ja) * | 1999-09-28 | 2001-04-13 | Sony Corp | 薄膜デバイスおよびその製造方法 |
-
2001
- 2001-05-21 US US09/860,452 patent/US6440820B1/en not_active Expired - Fee Related
-
2002
- 2002-05-01 EP EP02253080A patent/EP1261023A3/en not_active Withdrawn
- 2002-05-21 JP JP2002146879A patent/JP2003094398A/ja active Pending
- 2002-05-21 CN CN02120306.7A patent/CN1387251A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1387251A (zh) | 2002-12-25 |
| US6440820B1 (en) | 2002-08-27 |
| EP1261023A3 (en) | 2003-12-03 |
| EP1261023A2 (en) | 2002-11-27 |
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