CN1387250A - 利用硒化晶片接合的用于原子分辨率存储移动器的加工方法 - Google Patents

利用硒化晶片接合的用于原子分辨率存储移动器的加工方法 Download PDF

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Publication number
CN1387250A
CN1387250A CN02120300A CN02120300A CN1387250A CN 1387250 A CN1387250 A CN 1387250A CN 02120300 A CN02120300 A CN 02120300A CN 02120300 A CN02120300 A CN 02120300A CN 1387250 A CN1387250 A CN 1387250A
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China
Prior art keywords
wafer
processing
rotor
layer
stator
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Pending
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CN02120300A
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English (en)
Chinese (zh)
Inventor
H·李
C·C·杨
P·哈特维尔
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HP Inc
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Hewlett Packard Co
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Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1387250A publication Critical patent/CN1387250A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00896—Temporary protection during separation into individual elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Micromachines (AREA)
  • Semiconductor Memories (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
CN02120300A 2001-05-21 2002-05-21 利用硒化晶片接合的用于原子分辨率存储移动器的加工方法 Pending CN1387250A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/860453 2001-05-21
US09/860,453 US6436794B1 (en) 2001-05-21 2001-05-21 Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer

Publications (1)

Publication Number Publication Date
CN1387250A true CN1387250A (zh) 2002-12-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN02120300A Pending CN1387250A (zh) 2001-05-21 2002-05-21 利用硒化晶片接合的用于原子分辨率存储移动器的加工方法

Country Status (4)

Country Link
US (1) US6436794B1 (enExample)
EP (1) EP1260481A3 (enExample)
JP (1) JP4064151B2 (enExample)
CN (1) CN1387250A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105293419A (zh) * 2015-10-15 2016-02-03 华东光电集成器件研究所 一种防止悬浮层刻蚀损伤的mems器件

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AU695236B2 (en) * 1994-10-20 1998-08-13 Matsushita Electric Industrial Co., Ltd. High-frequency heating device
US6621096B2 (en) * 2001-05-21 2003-09-16 Hewlett-Packard Develpoment Company, L.P. Device isolation process flow for ARS system
US20040124538A1 (en) * 2002-12-31 2004-07-01 Rafael Reif Multi-layer integrated semiconductor structure
WO2004061961A1 (en) * 2002-12-31 2004-07-22 Massachusetts Institute Of Technology Multi-layer integrated semiconductor structure having an electrical shielding portion
US7064055B2 (en) * 2002-12-31 2006-06-20 Massachusetts Institute Of Technology Method of forming a multi-layer semiconductor structure having a seamless bonding interface
US7161875B2 (en) 2003-06-12 2007-01-09 Hewlett-Packard Development Company, L.P. Thermal-assisted magnetic memory storage device
US6819587B1 (en) 2003-06-12 2004-11-16 Hewlett-Packard Development Company, L.P. Thermal-assisted nanotip magnetic memory storage device
US6885582B2 (en) 2003-06-12 2005-04-26 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US6930368B2 (en) * 2003-07-31 2005-08-16 Hewlett-Packard Development Company, L.P. MEMS having a three-wafer structure
US7423954B2 (en) * 2003-12-17 2008-09-09 Hewlett-Packard Development Company, L.P. Contact probe storage sensor pod
US7436753B2 (en) 2003-12-17 2008-10-14 Mejia Robert G Contact probe storage FET sensor
US7808061B2 (en) * 2006-07-28 2010-10-05 Hewlett-Packard Development Company, L.P. Multi-die apparatus including moveable portions
JP6341959B2 (ja) 2016-05-27 2018-06-13 浜松ホトニクス株式会社 ファブリペロー干渉フィルタの製造方法
CN109196405B (zh) 2016-05-27 2021-09-10 浜松光子学株式会社 法布里-帕罗干涉滤光器的制造方法
KR102508597B1 (ko) 2016-08-24 2023-03-13 하마마츠 포토닉스 가부시키가이샤 패브리 페로 간섭 필터
CN110797315B (zh) * 2019-11-06 2021-06-11 烟台睿创微纳技术股份有限公司 一种晶圆级封装分割方法及晶圆级封装器件

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JPH0472608A (ja) * 1990-05-18 1992-03-06 Toshiba Corp 化合物半導体ウェハの製造方法および製造装置
TW289837B (enExample) 1994-01-18 1996-11-01 Hwelett Packard Co
US5472914A (en) * 1994-07-14 1995-12-05 The United States Of America As Represented By The Secretary Of The Air Force Wafer joined optoelectronic integrated circuits and method
KR960009074A (ko) * 1994-08-29 1996-03-22 모리시다 요이치 반도체 장치 및 그 제조방법
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
JPH08316145A (ja) * 1995-05-12 1996-11-29 Fuji Electric Co Ltd 半導体薄膜の成膜方法
US5807783A (en) * 1996-10-07 1998-09-15 Harris Corporation Surface mount die by handle replacement
US6411589B1 (en) * 1998-07-29 2002-06-25 Hewlett-Packard Company System and method for forming electrostatically actuated data storage mechanisms
US6346459B1 (en) * 1999-02-05 2002-02-12 Silicon Wafer Technologies, Inc. Process for lift off and transfer of semiconductor devices onto an alien substrate
JP2001102523A (ja) * 1999-09-28 2001-04-13 Sony Corp 薄膜デバイスおよびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105293419A (zh) * 2015-10-15 2016-02-03 华东光电集成器件研究所 一种防止悬浮层刻蚀损伤的mems器件
CN105293419B (zh) * 2015-10-15 2016-12-07 华东光电集成器件研究所 一种防止悬浮层刻蚀损伤的mems器件

Also Published As

Publication number Publication date
JP2003094397A (ja) 2003-04-03
US6436794B1 (en) 2002-08-20
EP1260481A3 (en) 2003-12-03
EP1260481A2 (en) 2002-11-27
JP4064151B2 (ja) 2008-03-19

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