JP2003017706A - Ｔｆｔ基板、それを用いた液晶表示装置及びその製造方法 - Google Patents

Ｔｆｔ基板、それを用いた液晶表示装置及びその製造方法

Info

Publication number
JP2003017706A
JP2003017706A JP2001200710A JP2001200710A JP2003017706A JP 2003017706 A JP2003017706 A JP 2003017706A JP 2001200710 A JP2001200710 A JP 2001200710A JP 2001200710 A JP2001200710 A JP 2001200710A JP 2003017706 A JP2003017706 A JP 2003017706A
Authority
JP
Japan
Prior art keywords
film
tft substrate
metal
thin film
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001200710A
Other languages
English (en)
Japanese (ja)
Inventor
Kazuyoshi Inoue
一吉 井上
Shigeo Matsuzaki
滋夫 松崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to JP2001200710A priority Critical patent/JP2003017706A/ja
Priority to PCT/JP2002/005057 priority patent/WO2003005453A1/ja
Priority to KR10-2003-7017295A priority patent/KR20040016908A/ko
Priority to CNB028132793A priority patent/CN1279623C/zh
Priority to TW091112014A priority patent/TWI293208B/zh
Publication of JP2003017706A publication Critical patent/JP2003017706A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001200710A 2001-07-02 2001-07-02 Ｔｆｔ基板、それを用いた液晶表示装置及びその製造方法 Withdrawn JP2003017706A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001200710A JP2003017706A (ja) 2001-07-02 2001-07-02 Ｔｆｔ基板、それを用いた液晶表示装置及びその製造方法
PCT/JP2002/005057 WO2003005453A1 (fr) 2001-07-02 2002-05-24 Substrat de tft, afficheur a cristaux liquides utilisant ce substrat, et procede de realisation
KR10-2003-7017295A KR20040016908A (ko) 2001-07-02 2002-05-24 Ｔｆｔ 기판, 그것을 사용한 액정 표시장치 및 그 제조 방법
CNB028132793A CN1279623C (zh) 2001-07-02 2002-05-24 Tft基板、使用它的液晶显示装置及其制造方法
TW091112014A TWI293208B (https=) 2001-07-02 2002-06-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001200710A JP2003017706A (ja) 2001-07-02 2001-07-02 Ｔｆｔ基板、それを用いた液晶表示装置及びその製造方法

Publications (1)

Publication Number Publication Date
JP2003017706A true JP2003017706A (ja) 2003-01-17

Family

ID=19037787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001200710A Withdrawn JP2003017706A (ja) 2001-07-02 2001-07-02 Ｔｆｔ基板、それを用いた液晶表示装置及びその製造方法

Country Status (5)

Country Link
JP (1) JP2003017706A (https=)
KR (1) KR20040016908A (https=)
CN (1) CN1279623C (https=)
TW (1) TWI293208B (https=)
WO (1) WO2003005453A1 (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004282066A (ja) * 2003-03-12 2004-10-07 Samsung Sdi Co Ltd 薄膜トランジスタ及びこれを具備した平板表示素子
JP2005165304A (ja) * 2003-11-14 2005-06-23 Semiconductor Energy Lab Co Ltd 液晶表示装置および液晶表示装置の作製方法
JP2005292768A (ja) * 2004-03-09 2005-10-20 Idemitsu Kosan Co Ltd Ｔｆｔ基板及びスパッタリングターゲット及び液晶表示装置及び画素電極及び透明電極及びｔｆｔ基板の製造方法
JP2007242793A (ja) * 2006-03-07 2007-09-20 Ulvac Japan Ltd 金属膜、液晶表示装置、金属膜の製造方法
EP1724790A4 (en) * 2004-03-09 2008-10-01 Idemitsu Kosan Co THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING METHOD AND LIQUID CRYSTAL DISPLAY UNIT THEREFOR AND SUCH A FACILITY AND METHOD AND SPUTTER TARGET AND THEREFORE OF A TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE, AND METHOD AND METHOD THEREFOR
JP2010117499A (ja) * 2008-11-12 2010-05-27 Toshiba Mobile Display Co Ltd アレイ基板及びアレイ基板の製造方法
WO2011037102A1 (ja) * 2009-09-28 2011-03-31 凸版印刷株式会社 アクティブマトリクス基板及びその製造方法並びに画像表示装置
US8058652B2 (en) 2004-10-28 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element
JP2014003298A (ja) * 2006-10-12 2014-01-09 Cambrios Technologies Corp ナノワイヤベースの透明導電体およびその適用
US9646996B2 (en) 2013-09-11 2017-05-09 Samsung Display Co., Ltd. Thin film transistor substrate and manufacturing method thereof

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101058458B1 (ko) 2004-09-22 2011-08-24 엘지디스플레이 주식회사 저분자 유기 반도체물질을 이용한 액정표시장치용 어레이기판 및 그의 제조 방법
KR20090115222A (ko) 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
KR101221261B1 (ko) * 2006-02-15 2013-01-11 엘지디스플레이 주식회사 액정 표시 장치용 어레이 기판 및 그 제조 방법
JP2007286150A (ja) * 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法
CN101435962B (zh) * 2007-11-15 2010-09-22 北京京东方光电科技有限公司 Tft-lcd阵列基板结构及其制造方法
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
JP2012118199A (ja) * 2010-11-30 2012-06-21 Panasonic Liquid Crystal Display Co Ltd 液晶パネル、液晶表示装置、及びその製造方法
CN102157567B (zh) * 2011-03-18 2013-02-06 深圳南玻伟光导电膜有限公司 半导体薄膜晶体管
CN102299104A (zh) * 2011-09-20 2011-12-28 深圳市华星光电技术有限公司 Tft阵列基板的制作方法及tft阵列基板
US9793409B2 (en) * 2016-01-14 2017-10-17 Hon Hai Precision Industry Co., Ltd. Thin film transistor array panel

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04153623A (ja) * 1990-10-18 1992-05-27 Fuji Xerox Co Ltd 配線構造
JP3349356B2 (ja) * 1996-08-21 2002-11-25 シャープ株式会社 薄膜トランジスタおよびその製造方法
JP4663829B2 (ja) * 1998-03-31 2011-04-06 三菱電機株式会社 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004282066A (ja) * 2003-03-12 2004-10-07 Samsung Sdi Co Ltd 薄膜トランジスタ及びこれを具備した平板表示素子
JP2005165304A (ja) * 2003-11-14 2005-06-23 Semiconductor Energy Lab Co Ltd 液晶表示装置および液晶表示装置の作製方法
US8773628B2 (en) 2004-03-09 2014-07-08 Idemitsu Kosan Co., Ltd. Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
JP2005292768A (ja) * 2004-03-09 2005-10-20 Idemitsu Kosan Co Ltd Ｔｆｔ基板及びスパッタリングターゲット及び液晶表示装置及び画素電極及び透明電極及びｔｆｔ基板の製造方法
EP1724790A4 (en) * 2004-03-09 2008-10-01 Idemitsu Kosan Co THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING METHOD AND LIQUID CRYSTAL DISPLAY UNIT THEREFOR AND SUCH A FACILITY AND METHOD AND SPUTTER TARGET AND THEREFORE OF A TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE, AND METHOD AND METHOD THEREFOR
US8038857B2 (en) 2004-03-09 2011-10-18 Idemitsu Kosan Co., Ltd. Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
US8507111B2 (en) 2004-03-09 2013-08-13 Idemitsu Kosan Co., Ltd. Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
US8058652B2 (en) 2004-10-28 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element
JP2007242793A (ja) * 2006-03-07 2007-09-20 Ulvac Japan Ltd 金属膜、液晶表示装置、金属膜の製造方法
US10749048B2 (en) 2006-10-12 2020-08-18 Cambrios Film Solutions Corporation Nanowire-based transparent conductors and applications thereof
JP2014003298A (ja) * 2006-10-12 2014-01-09 Cambrios Technologies Corp ナノワイヤベースの透明導電体およびその適用
JP2010117499A (ja) * 2008-11-12 2010-05-27 Toshiba Mobile Display Co Ltd アレイ基板及びアレイ基板の製造方法
WO2011037102A1 (ja) * 2009-09-28 2011-03-31 凸版印刷株式会社 アクティブマトリクス基板及びその製造方法並びに画像表示装置
US8848124B2 (en) 2009-09-28 2014-09-30 Toppan Printing Co., Ltd. Active matrix substrate, manufacturing method thereof, and image display device
JP4935963B2 (ja) * 2009-09-28 2012-05-23 凸版印刷株式会社 アクティブマトリクス基板及びその製造方法並びに画像表示装置
US9646996B2 (en) 2013-09-11 2017-05-09 Samsung Display Co., Ltd. Thin film transistor substrate and manufacturing method thereof
US10288966B2 (en) 2013-09-11 2019-05-14 Samsung Display Co., Ltd. Thin film transistor substrate and manufacturing method thereof

Also Published As

Publication number Publication date
KR20040016908A (ko) 2004-02-25
TWI293208B (https=) 2008-02-01
WO2003005453A1 (fr) 2003-01-16
CN1279623C (zh) 2006-10-11
CN1522470A (zh) 2004-08-18

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