CN1279623C - Tft基板、使用它的液晶显示装置及其制造方法 - Google Patents

Tft基板、使用它的液晶显示装置及其制造方法 Download PDF

Info

Publication number
CN1279623C
CN1279623C CNB028132793A CN02813279A CN1279623C CN 1279623 C CN1279623 C CN 1279623C CN B028132793 A CNB028132793 A CN B028132793A CN 02813279 A CN02813279 A CN 02813279A CN 1279623 C CN1279623 C CN 1279623C
Authority
CN
China
Prior art keywords
film
metal
tft substrate
buffer layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028132793A
Other languages
English (en)
Chinese (zh)
Other versions
CN1522470A (zh
Inventor
井上一吉
松崎滋夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Publication of CN1522470A publication Critical patent/CN1522470A/zh
Application granted granted Critical
Publication of CN1279623C publication Critical patent/CN1279623C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB028132793A 2001-07-02 2002-05-24 Tft基板、使用它的液晶显示装置及其制造方法 Expired - Fee Related CN1279623C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP200710/2001 2001-07-02
JP2001200710A JP2003017706A (ja) 2001-07-02 2001-07-02 Ｔｆｔ基板、それを用いた液晶表示装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1522470A CN1522470A (zh) 2004-08-18
CN1279623C true CN1279623C (zh) 2006-10-11

Family

ID=19037787

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028132793A Expired - Fee Related CN1279623C (zh) 2001-07-02 2002-05-24 Tft基板、使用它的液晶显示装置及其制造方法

Country Status (5)

Country Link
JP (1) JP2003017706A (https=)
KR (1) KR20040016908A (https=)
CN (1) CN1279623C (https=)
TW (1) TWI293208B (https=)
WO (1) WO2003005453A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100669688B1 (ko) * 2003-03-12 2007-01-18 삼성에스디아이 주식회사 박막트랜지스터 및 이를 구비한 평판표시소자
JP4737971B2 (ja) * 2003-11-14 2011-08-03 株式会社半導体エネルギー研究所 液晶表示装置および液晶表示装置の作製方法
US8038857B2 (en) 2004-03-09 2011-10-18 Idemitsu Kosan Co., Ltd. Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
JP4660667B2 (ja) * 2004-03-09 2011-03-30 出光興産株式会社 Ｔｆｔ基板及びスパッタリングターゲット及び液晶表示装置及び画素電極及び透明電極及びｔｆｔ基板の製造方法
KR101058458B1 (ko) 2004-09-22 2011-08-24 엘지디스플레이 주식회사 저분자 유기 반도체물질을 이용한 액정표시장치용 어레이기판 및 그의 제조 방법
US8058652B2 (en) * 2004-10-28 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element
KR20090115222A (ko) 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
KR101221261B1 (ko) * 2006-02-15 2013-01-11 엘지디스플레이 주식회사 액정 표시 장치용 어레이 기판 및 그 제조 방법
JP4999335B2 (ja) * 2006-03-07 2012-08-15 株式会社アルバック 金属膜、液晶表示装置、金属膜の製造方法
JP2007286150A (ja) * 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法
CN101589473B (zh) 2006-10-12 2011-10-05 凯博瑞奥斯技术公司 基于纳米线的透明导体及其应用
CN101435962B (zh) * 2007-11-15 2010-09-22 北京京东方光电科技有限公司 Tft-lcd阵列基板结构及其制造方法
JP2010117499A (ja) * 2008-11-12 2010-05-27 Toshiba Mobile Display Co Ltd アレイ基板及びアレイ基板の製造方法
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
WO2011037102A1 (ja) 2009-09-28 2011-03-31 凸版印刷株式会社 アクティブマトリクス基板及びその製造方法並びに画像表示装置
JP2012118199A (ja) * 2010-11-30 2012-06-21 Panasonic Liquid Crystal Display Co Ltd 液晶パネル、液晶表示装置、及びその製造方法
CN102157567B (zh) * 2011-03-18 2013-02-06 深圳南玻伟光导电膜有限公司 半导体薄膜晶体管
CN102299104A (zh) * 2011-09-20 2011-12-28 深圳市华星光电技术有限公司 Tft阵列基板的制作方法及tft阵列基板
KR102054000B1 (ko) 2013-09-11 2019-12-10 삼성디스플레이 주식회사 박막 트랜지스터 표시판, 액정 표시 장치 및 박막 트랜지스터 표시판의 제조방법
US9793409B2 (en) * 2016-01-14 2017-10-17 Hon Hai Precision Industry Co., Ltd. Thin film transistor array panel

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04153623A (ja) * 1990-10-18 1992-05-27 Fuji Xerox Co Ltd 配線構造
JP3349356B2 (ja) * 1996-08-21 2002-11-25 シャープ株式会社 薄膜トランジスタおよびその製造方法
JP4663829B2 (ja) * 1998-03-31 2011-04-06 三菱電機株式会社 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置

Also Published As

Publication number Publication date
KR20040016908A (ko) 2004-02-25
TWI293208B (https=) 2008-02-01
WO2003005453A1 (fr) 2003-01-16
CN1522470A (zh) 2004-08-18
JP2003017706A (ja) 2003-01-17

Similar Documents

Publication Publication Date Title
CN1279623C (zh) Tft基板、使用它的液晶显示装置及其制造方法
JP2022087237A (ja) 半導体装置
CN106676525B (zh) 银蚀刻液组合物和使用该组合物的显示基板
JP2010065317A (ja) 表示装置およびこれに用いるＣｕ合金膜
CN1897270A (zh) 布线结构、制造布线的方法、薄膜晶体管基板及其制造方法
JP2007221137A (ja) シリコン層の形成方法及びそれを用いた表示基板の製造方法
CN1258209C (zh) 半导体元件用导电性薄膜、半导体元件及它们的制造方法
CN109797396B (zh) 银膜蚀刻液组合物、用它的蚀刻方法及金属图案形成方法
CN1108539C (zh) 有源矩阵液晶显示器
CN110644003B (zh) 银薄膜蚀刻液组合物及利用其的蚀刻方法和金属图案的形成方法
CN1727977A (zh) 薄膜晶体管阵列衬底及其制造方法
KR101926199B1 (ko) 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법
KR20140082186A (ko) 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법
CN101079431A (zh) 半导体器件和有源矩阵型显示装置
US20130323470A1 (en) Conductive structure for panel and manufacturing method thereof
CN111155092B (zh) 银薄膜蚀刻液组合物、蚀刻方法及金属图案的形成方法
CN110359050B (zh) 含银薄膜蚀刻液组合物、用其制造的用于显示装置的阵列基板及其制造方法
CN111172541B (zh) 银薄膜蚀刻液组合物、蚀刻方法及金属图案的形成方法
CN1956172A (zh) 薄膜晶体管基板及其制造方法
KR102368371B1 (ko) 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법
CN101043006A (zh) 薄膜电晶体的制造方法
CN1315148C (zh) 平面显示器的电极基板
CN101060137A (zh) 薄膜晶体管及其制造方法
CN1851886A (zh) 薄膜晶体管的制作方法
CN101075640A (zh) 玻璃基板表面金属层结构及其制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20061011