JP2002521779A5 - - Google Patents

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Publication number
JP2002521779A5
JP2002521779A5 JP2000561619A JP2000561619A JP2002521779A5 JP 2002521779 A5 JP2002521779 A5 JP 2002521779A5 JP 2000561619 A JP2000561619 A JP 2000561619A JP 2000561619 A JP2000561619 A JP 2000561619A JP 2002521779 A5 JP2002521779 A5 JP 2002521779A5
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JP
Japan
Prior art keywords
transistor
short
field effect
capacitor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2000561619A
Other languages
English (en)
Japanese (ja)
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JP2002521779A (ja
Filing date
Publication date
Priority claimed from DE19832994A external-priority patent/DE19832994C2/de
Application filed filed Critical
Publication of JP2002521779A publication Critical patent/JP2002521779A/ja
Publication of JP2002521779A5 publication Critical patent/JP2002521779A5/ja
Ceased legal-status Critical Current

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JP2000561619A 1998-07-22 1999-07-05 強誘電性記憶装置 Ceased JP2002521779A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19832994.6 1998-07-22
DE19832994A DE19832994C2 (de) 1998-07-22 1998-07-22 Ferroelektrische Speicheranordnung
PCT/DE1999/002071 WO2000005720A1 (de) 1998-07-22 1999-07-05 Ferroelektrische speicheranordnung

Publications (2)

Publication Number Publication Date
JP2002521779A JP2002521779A (ja) 2002-07-16
JP2002521779A5 true JP2002521779A5 (https=) 2008-03-06

Family

ID=7874932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000561619A Ceased JP2002521779A (ja) 1998-07-22 1999-07-05 強誘電性記憶装置

Country Status (8)

Country Link
US (1) US6424558B2 (https=)
EP (1) EP1103051B1 (https=)
JP (1) JP2002521779A (https=)
KR (1) KR100554211B1 (https=)
CN (1) CN1143316C (https=)
DE (2) DE19832994C2 (https=)
TW (1) TW548652B (https=)
WO (1) WO2000005720A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19929308C1 (de) 1999-06-25 2000-11-09 Siemens Ag Verfahren zur Herstellung einer ferroelektrischen Speicheranordnung
DE10005619A1 (de) * 2000-02-09 2001-08-30 Infineon Technologies Ag Integrierter Halbleiterspeicher mit Speicherzellen mit ferroelektrischem Speichereffekt
DE10016726A1 (de) 2000-04-04 2001-10-18 Infineon Technologies Ag Verfahren zum Betrieb einer ferroelektrischen Speicheranordnung
DE10017368B4 (de) * 2000-04-07 2005-12-15 Infineon Technologies Ag Verfahren zum Betrieb eines integrierten Speichers
US6411555B1 (en) * 2001-03-19 2002-06-25 Micron Technology, Inc. Reference charge generator, a method for providing a reference charge from a reference charge generator, a method of operating a reference charge generator and a dram memory circuit formed using memory cells having an area of 6f2
US20040119105A1 (en) * 2002-12-18 2004-06-24 Wilson Dennis Robert Ferroelectric memory
CN100508061C (zh) * 2003-01-17 2009-07-01 华邦电子股份有限公司 消除动态随机处理内存的短路漏泄电流的电路
US7196924B2 (en) * 2004-04-06 2007-03-27 Macronix International Co., Ltd. Method of multi-level cell FeRAM
JP4088975B2 (ja) * 2004-07-14 2008-05-21 セイコーエプソン株式会社 強誘電体メモリ装置及び電子機器
JP4061597B2 (ja) * 2004-07-14 2008-03-19 セイコーエプソン株式会社 強誘電体メモリ装置及び電子機器
DE102004042171A1 (de) * 2004-08-31 2006-04-20 Infineon Technologies Ag Schutzschaltung für nichtflüchtige, elektrostatisch sensitive Speicher
CN100390901C (zh) * 2006-04-21 2008-05-28 北京大学深圳研究生院 铁电动态随机存储器单管单元阵列的编程方法
FR2904029B1 (fr) 2006-07-21 2008-08-29 Simu Sas Dispositif de commande d'un organe de debrayage d'un actionneur electrique
CN101252018B (zh) * 2007-09-03 2010-06-02 清华大学 采用新型时序操作的铁电编程信息存储单元的时序操作方法
CN101271728B (zh) * 2008-04-22 2011-05-11 清华大学 一种抑制小信号干扰的铁电存储器存储阵列结构
US7848131B2 (en) * 2008-10-19 2010-12-07 Juhan Kim High speed ferroelectric random access memory
US9412705B2 (en) * 2011-06-27 2016-08-09 Thin Film Electronics Asa Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
US9552864B1 (en) * 2016-03-11 2017-01-24 Micron Technology, Inc. Offset compensation for ferroelectric memory cell sensing
US10580510B2 (en) * 2017-12-22 2020-03-03 Nanya Technology Corporation Test system and method of operating the same
US11088170B2 (en) 2019-11-25 2021-08-10 Sandisk Technologies Llc Three-dimensional ferroelectric memory array including integrated gate selectors and methods of forming the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0197016A (ja) 1987-10-09 1989-04-14 Fujitsu Ltd 半導体集積回路装置
US4999519A (en) 1987-12-04 1991-03-12 Hitachi Vlsi Engineering Corporation Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier
US5121353A (en) * 1989-07-06 1992-06-09 Kabushiki Kaisha Toshiba Ferroelectric capacitor memory circuit MOS setting and transmission transistor
US5224069A (en) * 1989-07-06 1993-06-29 Kabushiki Kaisha Toshiba Ferroelectric capacitor memory circuit MOS setting and transmission transistors
US5151622A (en) 1990-11-06 1992-09-29 Vitelic Corporation CMOS logic circuit with output coupled to multiple feedback paths and associated method
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ
US5424975A (en) * 1993-12-30 1995-06-13 Micron Technology, Inc. Reference circuit for a non-volatile ferroelectric memory
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
US5959878A (en) * 1997-09-15 1999-09-28 Celis Semiconductor Corporation Ferroelectric memory cell with shunted ferroelectric capacitor and method of making same
US6256220B1 (en) * 1997-09-15 2001-07-03 Celis Semiconductor Corporation Ferroelectric memory with shunted isolated nodes
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same

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