JP2002521779A - 強誘電性記憶装置 - Google Patents

強誘電性記憶装置

Info

Publication number
JP2002521779A
JP2002521779A JP2000561619A JP2000561619A JP2002521779A JP 2002521779 A JP2002521779 A JP 2002521779A JP 2000561619 A JP2000561619 A JP 2000561619A JP 2000561619 A JP2000561619 A JP 2000561619A JP 2002521779 A JP2002521779 A JP 2002521779A
Authority
JP
Japan
Prior art keywords
transistor
memory
short
capacitor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2000561619A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002521779A5 (https=
Inventor
ブラウン ゲオルク
ヘーニヒシュミット ハインツ
Original Assignee
インフィネオン テクノロジース アクチエンゲゼルシャフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by インフィネオン テクノロジース アクチエンゲゼルシャフト filed Critical インフィネオン テクノロジース アクチエンゲゼルシャフト
Publication of JP2002521779A publication Critical patent/JP2002521779A/ja
Publication of JP2002521779A5 publication Critical patent/JP2002521779A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP2000561619A 1998-07-22 1999-07-05 強誘電性記憶装置 Ceased JP2002521779A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19832994.6 1998-07-22
DE19832994A DE19832994C2 (de) 1998-07-22 1998-07-22 Ferroelektrische Speicheranordnung
PCT/DE1999/002071 WO2000005720A1 (de) 1998-07-22 1999-07-05 Ferroelektrische speicheranordnung

Publications (2)

Publication Number Publication Date
JP2002521779A true JP2002521779A (ja) 2002-07-16
JP2002521779A5 JP2002521779A5 (https=) 2008-03-06

Family

ID=7874932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000561619A Ceased JP2002521779A (ja) 1998-07-22 1999-07-05 強誘電性記憶装置

Country Status (8)

Country Link
US (1) US6424558B2 (https=)
EP (1) EP1103051B1 (https=)
JP (1) JP2002521779A (https=)
KR (1) KR100554211B1 (https=)
CN (1) CN1143316C (https=)
DE (2) DE19832994C2 (https=)
TW (1) TW548652B (https=)
WO (1) WO2000005720A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19929308C1 (de) 1999-06-25 2000-11-09 Siemens Ag Verfahren zur Herstellung einer ferroelektrischen Speicheranordnung
DE10005619A1 (de) * 2000-02-09 2001-08-30 Infineon Technologies Ag Integrierter Halbleiterspeicher mit Speicherzellen mit ferroelektrischem Speichereffekt
DE10016726A1 (de) 2000-04-04 2001-10-18 Infineon Technologies Ag Verfahren zum Betrieb einer ferroelektrischen Speicheranordnung
DE10017368B4 (de) * 2000-04-07 2005-12-15 Infineon Technologies Ag Verfahren zum Betrieb eines integrierten Speichers
US6411555B1 (en) * 2001-03-19 2002-06-25 Micron Technology, Inc. Reference charge generator, a method for providing a reference charge from a reference charge generator, a method of operating a reference charge generator and a dram memory circuit formed using memory cells having an area of 6f2
US20040119105A1 (en) * 2002-12-18 2004-06-24 Wilson Dennis Robert Ferroelectric memory
CN100508061C (zh) * 2003-01-17 2009-07-01 华邦电子股份有限公司 消除动态随机处理内存的短路漏泄电流的电路
US7196924B2 (en) * 2004-04-06 2007-03-27 Macronix International Co., Ltd. Method of multi-level cell FeRAM
JP4088975B2 (ja) * 2004-07-14 2008-05-21 セイコーエプソン株式会社 強誘電体メモリ装置及び電子機器
JP4061597B2 (ja) * 2004-07-14 2008-03-19 セイコーエプソン株式会社 強誘電体メモリ装置及び電子機器
DE102004042171A1 (de) * 2004-08-31 2006-04-20 Infineon Technologies Ag Schutzschaltung für nichtflüchtige, elektrostatisch sensitive Speicher
CN100390901C (zh) * 2006-04-21 2008-05-28 北京大学深圳研究生院 铁电动态随机存储器单管单元阵列的编程方法
FR2904029B1 (fr) 2006-07-21 2008-08-29 Simu Sas Dispositif de commande d'un organe de debrayage d'un actionneur electrique
CN101252018B (zh) * 2007-09-03 2010-06-02 清华大学 采用新型时序操作的铁电编程信息存储单元的时序操作方法
CN101271728B (zh) * 2008-04-22 2011-05-11 清华大学 一种抑制小信号干扰的铁电存储器存储阵列结构
US7848131B2 (en) * 2008-10-19 2010-12-07 Juhan Kim High speed ferroelectric random access memory
US9412705B2 (en) * 2011-06-27 2016-08-09 Thin Film Electronics Asa Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
US9552864B1 (en) * 2016-03-11 2017-01-24 Micron Technology, Inc. Offset compensation for ferroelectric memory cell sensing
US10580510B2 (en) * 2017-12-22 2020-03-03 Nanya Technology Corporation Test system and method of operating the same
US11088170B2 (en) 2019-11-25 2021-08-10 Sandisk Technologies Llc Three-dimensional ferroelectric memory array including integrated gate selectors and methods of forming the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0197016A (ja) 1987-10-09 1989-04-14 Fujitsu Ltd 半導体集積回路装置
US4999519A (en) 1987-12-04 1991-03-12 Hitachi Vlsi Engineering Corporation Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier
US5121353A (en) * 1989-07-06 1992-06-09 Kabushiki Kaisha Toshiba Ferroelectric capacitor memory circuit MOS setting and transmission transistor
US5224069A (en) * 1989-07-06 1993-06-29 Kabushiki Kaisha Toshiba Ferroelectric capacitor memory circuit MOS setting and transmission transistors
US5151622A (en) 1990-11-06 1992-09-29 Vitelic Corporation CMOS logic circuit with output coupled to multiple feedback paths and associated method
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ
US5424975A (en) * 1993-12-30 1995-06-13 Micron Technology, Inc. Reference circuit for a non-volatile ferroelectric memory
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
US5959878A (en) * 1997-09-15 1999-09-28 Celis Semiconductor Corporation Ferroelectric memory cell with shunted ferroelectric capacitor and method of making same
US6256220B1 (en) * 1997-09-15 2001-07-03 Celis Semiconductor Corporation Ferroelectric memory with shunted isolated nodes
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same

Also Published As

Publication number Publication date
KR100554211B1 (ko) 2006-02-22
DE59905214D1 (de) 2003-05-28
US6424558B2 (en) 2002-07-23
EP1103051B1 (de) 2003-04-23
EP1103051A1 (de) 2001-05-30
KR20010053585A (ko) 2001-06-25
CN1310844A (zh) 2001-08-29
TW548652B (en) 2003-08-21
DE19832994A1 (de) 2000-01-27
DE19832994C2 (de) 2003-02-13
CN1143316C (zh) 2004-03-24
US20010012213A1 (en) 2001-08-09
WO2000005720A1 (de) 2000-02-03

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