KR100554211B1 - 강유전성 기억 장치 - Google Patents

강유전성 기억 장치 Download PDF

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Publication number
KR100554211B1
KR100554211B1 KR1020017000864A KR20017000864A KR100554211B1 KR 100554211 B1 KR100554211 B1 KR 100554211B1 KR 1020017000864 A KR1020017000864 A KR 1020017000864A KR 20017000864 A KR20017000864 A KR 20017000864A KR 100554211 B1 KR100554211 B1 KR 100554211B1
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KR
South Korea
Prior art keywords
transistor
memory
short
capacitor
ferroelectric
Prior art date
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Expired - Fee Related
Application number
KR1020017000864A
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English (en)
Korean (ko)
Other versions
KR20010053585A (ko
Inventor
게오르크 브라운
하인츠 회니히슈미트
Original Assignee
인피니언 테크놀로지스 아게
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Publication of KR20010053585A publication Critical patent/KR20010053585A/ko
Application granted granted Critical
Publication of KR100554211B1 publication Critical patent/KR100554211B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
KR1020017000864A 1998-07-22 1999-07-05 강유전성 기억 장치 Expired - Fee Related KR100554211B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19832994.6 1998-07-22
DE19832994A DE19832994C2 (de) 1998-07-22 1998-07-22 Ferroelektrische Speicheranordnung

Publications (2)

Publication Number Publication Date
KR20010053585A KR20010053585A (ko) 2001-06-25
KR100554211B1 true KR100554211B1 (ko) 2006-02-22

Family

ID=7874932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017000864A Expired - Fee Related KR100554211B1 (ko) 1998-07-22 1999-07-05 강유전성 기억 장치

Country Status (8)

Country Link
US (1) US6424558B2 (https=)
EP (1) EP1103051B1 (https=)
JP (1) JP2002521779A (https=)
KR (1) KR100554211B1 (https=)
CN (1) CN1143316C (https=)
DE (2) DE19832994C2 (https=)
TW (1) TW548652B (https=)
WO (1) WO2000005720A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19929308C1 (de) 1999-06-25 2000-11-09 Siemens Ag Verfahren zur Herstellung einer ferroelektrischen Speicheranordnung
DE10005619A1 (de) * 2000-02-09 2001-08-30 Infineon Technologies Ag Integrierter Halbleiterspeicher mit Speicherzellen mit ferroelektrischem Speichereffekt
DE10016726A1 (de) 2000-04-04 2001-10-18 Infineon Technologies Ag Verfahren zum Betrieb einer ferroelektrischen Speicheranordnung
DE10017368B4 (de) * 2000-04-07 2005-12-15 Infineon Technologies Ag Verfahren zum Betrieb eines integrierten Speichers
US6411555B1 (en) * 2001-03-19 2002-06-25 Micron Technology, Inc. Reference charge generator, a method for providing a reference charge from a reference charge generator, a method of operating a reference charge generator and a dram memory circuit formed using memory cells having an area of 6f2
US20040119105A1 (en) * 2002-12-18 2004-06-24 Wilson Dennis Robert Ferroelectric memory
CN100508061C (zh) * 2003-01-17 2009-07-01 华邦电子股份有限公司 消除动态随机处理内存的短路漏泄电流的电路
US7196924B2 (en) * 2004-04-06 2007-03-27 Macronix International Co., Ltd. Method of multi-level cell FeRAM
JP4088975B2 (ja) * 2004-07-14 2008-05-21 セイコーエプソン株式会社 強誘電体メモリ装置及び電子機器
JP4061597B2 (ja) * 2004-07-14 2008-03-19 セイコーエプソン株式会社 強誘電体メモリ装置及び電子機器
DE102004042171A1 (de) * 2004-08-31 2006-04-20 Infineon Technologies Ag Schutzschaltung für nichtflüchtige, elektrostatisch sensitive Speicher
CN100390901C (zh) * 2006-04-21 2008-05-28 北京大学深圳研究生院 铁电动态随机存储器单管单元阵列的编程方法
FR2904029B1 (fr) 2006-07-21 2008-08-29 Simu Sas Dispositif de commande d'un organe de debrayage d'un actionneur electrique
CN101252018B (zh) * 2007-09-03 2010-06-02 清华大学 采用新型时序操作的铁电编程信息存储单元的时序操作方法
CN101271728B (zh) * 2008-04-22 2011-05-11 清华大学 一种抑制小信号干扰的铁电存储器存储阵列结构
US7848131B2 (en) * 2008-10-19 2010-12-07 Juhan Kim High speed ferroelectric random access memory
US9412705B2 (en) * 2011-06-27 2016-08-09 Thin Film Electronics Asa Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
US9552864B1 (en) * 2016-03-11 2017-01-24 Micron Technology, Inc. Offset compensation for ferroelectric memory cell sensing
US10580510B2 (en) * 2017-12-22 2020-03-03 Nanya Technology Corporation Test system and method of operating the same
US11088170B2 (en) 2019-11-25 2021-08-10 Sandisk Technologies Llc Three-dimensional ferroelectric memory array including integrated gate selectors and methods of forming the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0197016A (ja) 1987-10-09 1989-04-14 Fujitsu Ltd 半導体集積回路装置
US4999519A (en) 1987-12-04 1991-03-12 Hitachi Vlsi Engineering Corporation Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier
US5121353A (en) * 1989-07-06 1992-06-09 Kabushiki Kaisha Toshiba Ferroelectric capacitor memory circuit MOS setting and transmission transistor
US5224069A (en) * 1989-07-06 1993-06-29 Kabushiki Kaisha Toshiba Ferroelectric capacitor memory circuit MOS setting and transmission transistors
US5151622A (en) 1990-11-06 1992-09-29 Vitelic Corporation CMOS logic circuit with output coupled to multiple feedback paths and associated method
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ
US5424975A (en) * 1993-12-30 1995-06-13 Micron Technology, Inc. Reference circuit for a non-volatile ferroelectric memory
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
US5959878A (en) * 1997-09-15 1999-09-28 Celis Semiconductor Corporation Ferroelectric memory cell with shunted ferroelectric capacitor and method of making same
US6256220B1 (en) * 1997-09-15 2001-07-03 Celis Semiconductor Corporation Ferroelectric memory with shunted isolated nodes
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same

Also Published As

Publication number Publication date
DE59905214D1 (de) 2003-05-28
US6424558B2 (en) 2002-07-23
EP1103051B1 (de) 2003-04-23
EP1103051A1 (de) 2001-05-30
KR20010053585A (ko) 2001-06-25
CN1310844A (zh) 2001-08-29
TW548652B (en) 2003-08-21
JP2002521779A (ja) 2002-07-16
DE19832994A1 (de) 2000-01-27
DE19832994C2 (de) 2003-02-13
CN1143316C (zh) 2004-03-24
US20010012213A1 (en) 2001-08-09
WO2000005720A1 (de) 2000-02-03

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