JP2002517089A5 - - Google Patents
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- JP2002517089A5 JP2002517089A5 JP2000551427A JP2000551427A JP2002517089A5 JP 2002517089 A5 JP2002517089 A5 JP 2002517089A5 JP 2000551427 A JP2000551427 A JP 2000551427A JP 2000551427 A JP2000551427 A JP 2000551427A JP 2002517089 A5 JP2002517089 A5 JP 2002517089A5
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- Prior art keywords
- trench
- chamber
- processing
- substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 description 120
- 238000012545 processing Methods 0.000 description 115
- 238000000034 method Methods 0.000 description 104
- 239000000758 substrate Substances 0.000 description 93
- 239000007789 gas Substances 0.000 description 80
- 238000000151 deposition Methods 0.000 description 64
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 50
- 230000008569 process Effects 0.000 description 39
- 230000008021 deposition Effects 0.000 description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 37
- 229910052710 silicon Inorganic materials 0.000 description 37
- 239000010703 silicon Substances 0.000 description 37
- 238000011049 filling Methods 0.000 description 36
- 238000004140 cleaning Methods 0.000 description 20
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 19
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- 239000003989 dielectric material Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- 150000004767 nitrides Chemical class 0.000 description 18
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000002243 precursor Substances 0.000 description 15
- 238000009826 distribution Methods 0.000 description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 14
- 238000001878 scanning electron micrograph Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000000137 annealing Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 238000009413 insulation Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 229910052734 helium Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 10
- 239000001307 helium Substances 0.000 description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000006117 anti-reflective coating Substances 0.000 description 8
- 230000010354 integration Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
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- 238000010586 diagram Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
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- 230000006872 improvement Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000003416 augmentation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- 239000012705 liquid precursor Substances 0.000 description 2
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- 238000011068 loading method Methods 0.000 description 2
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- 239000001272 nitrous oxide Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
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- 230000005587 bubbling Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
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- 239000000470 constituent Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
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- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 231100000719 pollutant Toxicity 0.000 description 1
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- 230000002829 reductive effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- -1 vapors Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98401232.8 | 1998-05-22 | ||
| EP98401232A EP0959496B1 (en) | 1998-05-22 | 1998-05-22 | Methods for forming self-planarized dielectric layer for shallow trench isolation |
| PCT/IB1999/000835 WO1999062108A2 (en) | 1998-05-22 | 1999-05-10 | Methods for forming self-planarized dielectric layer for shallow trench isolation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002517089A JP2002517089A (ja) | 2002-06-11 |
| JP2002517089A5 true JP2002517089A5 (enExample) | 2009-10-22 |
Family
ID=8235378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000551427A Pending JP2002517089A (ja) | 1998-05-22 | 1999-05-10 | 浅いトレンチ分離のための自己平坦化絶縁層を形成する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6733955B1 (enExample) |
| EP (1) | EP0959496B1 (enExample) |
| JP (1) | JP2002517089A (enExample) |
| KR (2) | KR100687367B1 (enExample) |
| DE (1) | DE69835276T2 (enExample) |
| TW (1) | TW413885B (enExample) |
| WO (1) | WO1999062108A2 (enExample) |
Families Citing this family (103)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU4059800A (en) * | 1999-04-02 | 2000-10-23 | Silicon Valley Group Thermal Systems, Llc | Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth |
| TW439194B (en) * | 2000-01-24 | 2001-06-07 | United Microelectronics Corp | Manufacturing method of shallow trench isolation region |
| TW479315B (en) * | 2000-10-31 | 2002-03-11 | Applied Materials Inc | Continuous depostiton process |
| JP4989817B2 (ja) * | 2000-12-21 | 2012-08-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US6362098B1 (en) | 2001-02-28 | 2002-03-26 | Motorola, Inc. | Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate |
| US7026172B2 (en) * | 2001-10-22 | 2006-04-11 | Promos Technologies, Inc. | Reduced thickness variation in a material layer deposited in narrow and wide integrated circuit trenches |
| WO2003043078A2 (en) * | 2001-11-13 | 2003-05-22 | Advanced Micro Devices, Inc. | Preferential corner rounding of trench structures using post-fill oxidation |
| US7456116B2 (en) * | 2002-09-19 | 2008-11-25 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
| US7141483B2 (en) * | 2002-09-19 | 2006-11-28 | Applied Materials, Inc. | Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill |
| US7431967B2 (en) * | 2002-09-19 | 2008-10-07 | Applied Materials, Inc. | Limited thermal budget formation of PMD layers |
| US20070212850A1 (en) * | 2002-09-19 | 2007-09-13 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
| US7335609B2 (en) * | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
| US6905940B2 (en) | 2002-09-19 | 2005-06-14 | Applied Materials, Inc. | Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
| US6828211B2 (en) * | 2002-10-01 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
| US20040074516A1 (en) * | 2002-10-18 | 2004-04-22 | Hogle Richard A. | Sub-atmospheric supply of fluorine to semiconductor process chamber |
| DE10259728B4 (de) * | 2002-12-19 | 2008-01-17 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer Grabenisolationsstruktur und Verfahren zum Steuern eines Grades an Kantenrundung einer Grabenisolationsstruktur in einem Halbleiterbauelement |
| KR100454849B1 (ko) * | 2002-12-20 | 2004-11-03 | 아남반도체 주식회사 | 반도체 소자의 제조방법 |
| JP4161745B2 (ja) * | 2003-03-06 | 2008-10-08 | 株式会社デンソー | 光学素子およびその製造方法 |
| IL155137A0 (en) * | 2003-03-27 | 2003-10-31 | Yissum Res Dev Co | A method for generating plant diversity |
| US7029591B2 (en) * | 2003-04-23 | 2006-04-18 | Lsi Logic Corporation | Planarization with reduced dishing |
| US7528051B2 (en) * | 2004-05-14 | 2009-05-05 | Applied Materials, Inc. | Method of inducing stresses in the channel region of a transistor |
| US7176105B2 (en) | 2004-06-01 | 2007-02-13 | Applied Materials, Inc. | Dielectric gap fill with oxide selectively deposited over silicon liner |
| US7642171B2 (en) | 2004-08-04 | 2010-01-05 | Applied Materials, Inc. | Multi-step anneal of thin films for film densification and improved gap-fill |
| US20070212847A1 (en) * | 2004-08-04 | 2007-09-13 | Applied Materials, Inc. | Multi-step anneal of thin films for film densification and improved gap-fill |
| US20060264054A1 (en) * | 2005-04-06 | 2006-11-23 | Gutsche Martin U | Method for etching a trench in a semiconductor substrate |
| JP5319868B2 (ja) * | 2005-10-17 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20070102399A1 (en) * | 2005-11-07 | 2007-05-10 | Tokyo Electron Limited | Method and apparatus for manufacturing a semiconductor device, control program and computer-readable storage medium |
| US20070249128A1 (en) * | 2006-04-19 | 2007-10-25 | Junjung Kim | Ultraviolet (UV) Radiation Treatment Methods for Subatmospheric Chemical Vapor Deposition (SACVD) of Ozone-Tetraethoxysilane (O3-TEOS) |
| KR100772275B1 (ko) * | 2006-05-24 | 2007-11-01 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
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| US20090184402A1 (en) * | 2008-01-22 | 2009-07-23 | United Microelectronics Corp. | Method of fabricating a shallow trench isolation structure including forming a second liner covering the corner of the trench and first liner. |
| US8211808B2 (en) | 2009-08-31 | 2012-07-03 | Applied Materials, Inc. | Silicon-selective dry etch for carbon-containing films |
| US8404583B2 (en) * | 2010-03-12 | 2013-03-26 | Applied Materials, Inc. | Conformality of oxide layers along sidewalls of deep vias |
| US8796106B2 (en) * | 2010-03-30 | 2014-08-05 | Stmicroelectronics S.R.L. | Isolation trenches |
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| US8741778B2 (en) | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
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| US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
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1998
- 1998-05-22 DE DE69835276T patent/DE69835276T2/de not_active Expired - Fee Related
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1999
- 1999-05-10 KR KR1020007013140A patent/KR100687367B1/ko not_active Expired - Fee Related
- 1999-05-10 US US09/701,065 patent/US6733955B1/en not_active Expired - Fee Related
- 1999-05-10 JP JP2000551427A patent/JP2002517089A/ja active Pending
- 1999-05-10 WO PCT/IB1999/000835 patent/WO1999062108A2/en not_active Ceased
- 1999-05-10 KR KR1020067014383A patent/KR100692090B1/ko not_active Expired - Fee Related
- 1999-07-01 TW TW088108479A patent/TW413885B/zh not_active IP Right Cessation
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