JP2002510877A - 表面平坦化のための、表面への制御された多様な厚みの材料の蒸着 - Google Patents
表面平坦化のための、表面への制御された多様な厚みの材料の蒸着Info
- Publication number
- JP2002510877A JP2002510877A JP2000542790A JP2000542790A JP2002510877A JP 2002510877 A JP2002510877 A JP 2002510877A JP 2000542790 A JP2000542790 A JP 2000542790A JP 2000542790 A JP2000542790 A JP 2000542790A JP 2002510877 A JP2002510877 A JP 2002510877A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- tool
- height
- database
- profile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 title description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000000376 reactant Substances 0.000 claims abstract description 25
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 20
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 19
- 239000002344 surface layer Substances 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000012876 topography Methods 0.000 claims 2
- 238000004886 process control Methods 0.000 claims 1
- 230000000994 depressogenic effect Effects 0.000 abstract description 3
- 238000012937 correction Methods 0.000 description 18
- 230000008859 change Effects 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/056,024 US6033921A (en) | 1998-04-06 | 1998-04-06 | Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface |
| US09/056,024 | 1998-04-06 | ||
| PCT/US1998/022003 WO1999052133A1 (en) | 1998-04-06 | 1998-10-19 | Depositing a material of controlled, variable thickness across a surface for planarization of that surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002510877A true JP2002510877A (ja) | 2002-04-09 |
| JP2002510877A5 JP2002510877A5 (enExample) | 2006-01-05 |
Family
ID=22001674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000542790A Pending JP2002510877A (ja) | 1998-04-06 | 1998-10-19 | 表面平坦化のための、表面への制御された多様な厚みの材料の蒸着 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6033921A (enExample) |
| EP (1) | EP1070343A1 (enExample) |
| JP (1) | JP2002510877A (enExample) |
| KR (1) | KR20010042493A (enExample) |
| WO (1) | WO1999052133A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101733064B1 (ko) | 2015-06-01 | 2017-05-08 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 시스템, 기판 처리 장치 및 기록 매체 |
| CN107871711A (zh) * | 2016-09-28 | 2018-04-03 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置及记录介质 |
| CN115667577A (zh) * | 2020-06-15 | 2023-01-31 | 东京毅力科创株式会社 | 喷淋板及成膜装置 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033921A (en) * | 1998-04-06 | 2000-03-07 | Advanced Micro Devices, Inc. | Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface |
| US6503767B2 (en) * | 2000-12-19 | 2003-01-07 | Speedfam-Ipec Corporation | Process for monitoring a process, planarizing a surface, and for quantifying the results of a planarization process |
| US6996235B2 (en) * | 2001-10-08 | 2006-02-07 | Pitney Bowes Inc. | Method and system for secure printing of documents via a printer coupled to the internet |
| EP1629522A4 (en) * | 2003-05-30 | 2008-07-23 | Aviza Tech Inc | GAS DISTRIBUTION SYSTEM |
| JP6133347B2 (ja) | 2015-03-30 | 2017-05-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム及びプログラム |
| JP6109224B2 (ja) * | 2015-03-30 | 2017-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
| JP6072845B2 (ja) * | 2015-03-31 | 2017-02-01 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム |
| JP6126155B2 (ja) * | 2015-03-31 | 2017-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
| US20170040233A1 (en) * | 2015-08-04 | 2017-02-09 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus and Substrate Processing System |
| JP6151745B2 (ja) * | 2015-08-04 | 2017-06-21 | 株式会社日立国際電気 | 基板処理装置、基板処理システム、半導体装置の製造方法、プログラム及び記録媒体 |
| JP6153975B2 (ja) * | 2015-08-07 | 2017-06-28 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、プログラム、記録媒体および基板処理装置 |
| CN114075661B (zh) * | 2020-08-14 | 2022-11-18 | 长鑫存储技术有限公司 | 半导体沉积方法及半导体沉积系统 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6479399A (en) * | 1987-09-22 | 1989-03-24 | Nippon Steel Corp | Production of metallic plate having colored pattern |
| JPH04212414A (ja) * | 1990-08-16 | 1992-08-04 | Fuji Electric Co Ltd | プラズマ処理装置 |
| JPH06177056A (ja) * | 1992-12-09 | 1994-06-24 | Hitachi Ltd | ガス処理装置 |
| JPH0922795A (ja) * | 1995-07-04 | 1997-01-21 | Sony Corp | プラズマｃｖｄ装置およびプラズマｃｖｄ方法 |
| JPH09205049A (ja) * | 1996-01-23 | 1997-08-05 | Kokusai Electric Co Ltd | 成膜装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0582724A1 (de) * | 1992-08-04 | 1994-02-16 | Siemens Aktiengesellschaft | Verfahren zur lokal und global planarisierenden CVD-Abscheidung von SiO2-Schichten auf strukturierten Siliziumsubstraten |
| US5419803A (en) * | 1993-11-17 | 1995-05-30 | Hughes Aircraft Company | Method of planarizing microstructures |
| KR100203995B1 (ko) * | 1995-02-16 | 1999-06-15 | 나가시마 카쭈시게, 노미야마 아키히코 | 입자충전방법 및 장치 |
| US5665199A (en) * | 1995-06-23 | 1997-09-09 | Advanced Micro Devices, Inc. | Methodology for developing product-specific interlayer dielectric polish processes |
| KR0165320B1 (ko) * | 1995-12-27 | 1999-02-01 | 김광호 | 반도체 산화 공정의 소크타임 설정 방법 |
| US6033921A (en) * | 1998-04-06 | 2000-03-07 | Advanced Micro Devices, Inc. | Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface |
-
1998
- 1998-04-06 US US09/056,024 patent/US6033921A/en not_active Expired - Fee Related
- 1998-10-19 WO PCT/US1998/022003 patent/WO1999052133A1/en not_active Ceased
- 1998-10-19 KR KR1020007011118A patent/KR20010042493A/ko not_active Withdrawn
- 1998-10-19 JP JP2000542790A patent/JP2002510877A/ja active Pending
- 1998-10-19 EP EP98953682A patent/EP1070343A1/en not_active Withdrawn
-
1999
- 1999-11-15 US US09/441,222 patent/US6184986B1/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6479399A (en) * | 1987-09-22 | 1989-03-24 | Nippon Steel Corp | Production of metallic plate having colored pattern |
| JPH04212414A (ja) * | 1990-08-16 | 1992-08-04 | Fuji Electric Co Ltd | プラズマ処理装置 |
| JPH06177056A (ja) * | 1992-12-09 | 1994-06-24 | Hitachi Ltd | ガス処理装置 |
| JPH0922795A (ja) * | 1995-07-04 | 1997-01-21 | Sony Corp | プラズマｃｖｄ装置およびプラズマｃｖｄ方法 |
| JPH09205049A (ja) * | 1996-01-23 | 1997-08-05 | Kokusai Electric Co Ltd | 成膜装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101733064B1 (ko) | 2015-06-01 | 2017-05-08 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 시스템, 기판 처리 장치 및 기록 매체 |
| CN107871711A (zh) * | 2016-09-28 | 2018-04-03 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置及记录介质 |
| JP2018056281A (ja) * | 2016-09-28 | 2018-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| CN115667577A (zh) * | 2020-06-15 | 2023-01-31 | 东京毅力科创株式会社 | 喷淋板及成膜装置 |
| KR20230019202A (ko) | 2020-06-15 | 2023-02-07 | 도쿄엘렉트론가부시키가이샤 | 샤워 플레이트 및 성막 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6033921A (en) | 2000-03-07 |
| WO1999052133A1 (en) | 1999-10-14 |
| EP1070343A1 (en) | 2001-01-24 |
| KR20010042493A (ko) | 2001-05-25 |
| US6184986B1 (en) | 2001-02-06 |
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Legal Events
| Date | Code | Title | Description |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050915 |
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