JP2002507247A - ニオブ粉末とニオブ電解コンデンサー - Google Patents
ニオブ粉末とニオブ電解コンデンサーInfo
- Publication number
- JP2002507247A JP2002507247A JP52165598A JP52165598A JP2002507247A JP 2002507247 A JP2002507247 A JP 2002507247A JP 52165598 A JP52165598 A JP 52165598A JP 52165598 A JP52165598 A JP 52165598A JP 2002507247 A JP2002507247 A JP 2002507247A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- niobium
- niobium powder
- ppm
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.フレーク化されたニオブ粉末。 2.前記粉末が凝集された請求項1のニオブ粉末。 3.前記粉末が少なくとも0.15m2/gのBET表面積を有する請求項1 の粉末。 4.前記粉末が少なくとも約1.0m2/gのBET表面積を有する請求項1 の粉末。 5.前記粉末が少なくとも約2.0m2/gのBET表面積を有する請求項1 の粉末。 6.前記粉末が約1.0〜約5.0m2/gのBET表面積を有する請求項1 の粉末。 7.前記粉末が約2.0〜約5.0m2/gのBET表面積を有する請求項1 の粉末。 8.前記粉末が水素化されない請求項1のニオブ粉末。 9.前記粉末が約35g/in3未満のスコット密度を有する請求項1の粉末 。 10.前記粉末が電解コンデンサー陽極に形成され、前記陽極が約30,00 0CV/g〜約61,000CV/gのキャパシタンスを有する請求項1の粉末 。 11.請求項1のニオブ粉末から作られるコンデンサー。 12.前記粉末が電解コンデンサー陽極に形成され、前記陽極が約30,00 0CV/g〜約61,000CV/gのキャパシタンスを有するニオブ粉末。 13.前記粉末が水素化される請求項12のニオブ粉末。 14.少なくとも0.5m2/gのBET表面積を有するニオブ粉末。 15.少なくとも約1.0m2/gのBET表面積を有する請求項14のニオ ブ粉末。 16.約1.0〜約5.0m2/gのBET表面積を有する請求項14のニオ ブ粉末。 17.少なくとも約2.0m2/gのBET表面積を有する請求項14のニオ ブ粉末。 18.約2.0m2/g〜約4.0m2/gのBET表面積を有する請求項14 のニオブ粉末。 19.約2.0〜約5.0m2/gのBET表面積を有する請求項14のニオ ブ粉末。 20.前記ニオブ粉末が水素化されない請求項14のニオブ粉末。 21.前記ニオブ粉末が凝集された請求項14のニオブ粉末。 22.請求項14のニオブ粉末を包含する処方物から調製されるコンデンサー 。 23.前記粉末が約1200℃〜約1750℃の温度で焼結される請求項22 のコンデンサー。 24.前記粉末が約1200℃〜約1450℃の温度で焼結される請求項22 のコンデンサー。 25.前記粉末が約1250℃〜約1350℃の温度で焼結される請求項22 のコンデンサー。 26.請求項15のニオブ粉末を包含する処方物から調製されるコンデンサー 。 27.請求項16のニオブ粉末を包含する処方物から調製されるコンデンサー 。 28.請求項17のニオブ粉末を包含する処方物から調製されるコンデンサー 。 29.請求項21のニオブ粉末を包含する処方物から調製されるコンデンサー 。 30.約400ppm未満の燐レベルを有する請求項14のニオブ粉末。 31.約100ppm未満の燐レベルを有する請求項14のニオブ粉末。 32.約25ppm未満の燐レベルを有する請求項14のニオブ粉末。 33.前記コンデンサーが約30〜約50ボルトの電圧で形成される請求項2 2のコンデンサー。 34.前記コンデンサーが約5.0na/CV未満のDC漏れを有する請求項 22のコンデンサー。 35.前記コンデンサーが約5.0na/CV〜約0.50na/CVのDC 漏洩を有する請求項22のコンデンサー。 36.前記コンデンサーが約30〜約50ボルトの電圧で二次成形される請求 項26のコンデンサー。 37.前記ニオブ粉末をDC漏洩を低減するのに十分な量の酸素でドーピング する工程を包含するニオブ粉末から作られるニオブ陽極におけるDC漏洩の低減 方法。 38.前記ニオブ粉末が少なくとも約2,000ppmの酸素でドーピングさ れる請求項37の方法。 39.前記ニオブ粉末が約2,000ppm〜約10,000ppmの量の酸 素でドーピングされる請求項37の方法。 40.前記ニオブ粉末が約3,000ppm〜約7,000ppmの量の酸素 でドーピングされる請求項37の方法。 41.前記陽極が約30〜約50ボルトの電圧で形成される請求項37の方法 。 42.前記陽極が約40ボルトの電圧で形成される請求項37の方法。 43.前記ニオブ粉末が約400ppm未満の燐レベルを有する請求項37の 方法。 44.前記ニオブ粉末が約100ppm未満の燐レベルを有する請求項37の 方法。 45.前記ニオブ粉末が約25ppm未満の燐レベルを有する請求項37の方 法。 46.前記陽極が約1200℃〜約1750℃の温度で焼結される請求項37 の方法。 47.前記陽極が約1200℃〜約1450℃の温度で焼結される請求項37 の方法。 48.前記陽極が約1250℃〜約1350℃の温度で焼結される請求項37 の方法。 49.少なくとも約2,000ppmの酸素ドーピング含量を有するニオブ粉 末。 50.約2,000ppm〜約20,000ppmの酸素ドーピング含量を有 する請求項49のニオブ粉末。 51.約2,750ppm〜約10,000ppmの酸素ドーピング含量を有 する請求項49のニオブ粉末。 52.約4,000ppm〜約9,000ppmの酸素ドーピング含量を有す る請求項49のニオブ粉末。 53.請求項49のニオブ粉末から形成される電解質コンデンサー。 54.その表面に酸化ニオブ膜をさらに包含する請求項25のコンデンサー。 55.前記フィルムが五酸化ニオブ膜を包含する請求項54のコ ンデンサー。 56.約2,000ppm以上の酸素含量を有する請求項14のニオブ粉末。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2956196P | 1996-11-07 | 1996-11-07 | |
US60/029,561 | 1996-11-07 | ||
US08/962,830 | 1997-11-03 | ||
US08/962,830 US6165623A (en) | 1996-11-07 | 1997-11-03 | Niobium powders and niobium electrolytic capacitors |
PCT/US1997/019949 WO1998019811A1 (en) | 1996-11-07 | 1997-11-05 | Niobium powders and niobium electrolytic capacitors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002507247A true JP2002507247A (ja) | 2002-03-05 |
JP4213222B2 JP4213222B2 (ja) | 2009-01-21 |
Family
ID=26705079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52165598A Expired - Fee Related JP4213222B2 (ja) | 1996-11-07 | 1997-11-05 | ニオブ粉末とニオブ電解コンデンサー |
Country Status (12)
Country | Link |
---|---|
US (2) | US6165623A (ja) |
EP (1) | EP0946323B2 (ja) |
JP (1) | JP4213222B2 (ja) |
AU (1) | AU5162798A (ja) |
BR (1) | BR9712906A (ja) |
CA (1) | CA2271780A1 (ja) |
CZ (1) | CZ295984B6 (ja) |
DE (1) | DE69725880T3 (ja) |
EE (1) | EE9900189A (ja) |
IL (1) | IL129832A0 (ja) |
PT (1) | PT946323E (ja) |
WO (1) | WO1998019811A1 (ja) |
Cited By (8)
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---|---|---|---|---|
JP2002525847A (ja) * | 1998-09-10 | 2002-08-13 | エイチ・シー・スタルク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 焼結された耐火性金属層、特に土酸金属電解コンデンサーまたは陽極を製造するためのペースト |
JP2002544677A (ja) * | 1999-05-12 | 2002-12-24 | キャボット コーポレイション | 高キャパシタンスニオブ粉末及び電解キャパシターアノード |
JP2004247299A (ja) * | 2003-02-05 | 2004-09-02 | Wc Heraeus Gmbh | ニオブ線材、その製造法および該ニオブ線材の使用 |
WO2008001774A1 (fr) * | 2006-06-26 | 2008-01-03 | Mitsui Mining & Smelting Co., Ltd. | Procédé de fabrication d'oxydes de niobium et de monoxyde de niobium |
JP2008010747A (ja) * | 2006-06-30 | 2008-01-17 | Sanyo Electric Co Ltd | 電解コンデンサおよびその製造方法 |
JP2008088055A (ja) * | 1995-10-12 | 2008-04-17 | Cabot Corp | 五酸化ニオブ及びタンタル化合物 |
WO2010050558A1 (ja) | 2008-10-29 | 2010-05-06 | 昭和電工株式会社 | コンデンサ素子の製造方法 |
JP2014022749A (ja) * | 2012-07-19 | 2014-02-03 | Avx Corp | 高電圧での性能を改良した固体電解コンデンサ |
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US6165623A (en) * | 1996-11-07 | 2000-12-26 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
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- 1997-11-05 IL IL12983297A patent/IL129832A0/xx not_active IP Right Cessation
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- 1997-11-05 DE DE69725880T patent/DE69725880T3/de not_active Expired - Lifetime
- 1997-11-05 EE EEP199900189A patent/EE9900189A/xx unknown
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- 1997-11-05 AU AU51627/98A patent/AU5162798A/en not_active Abandoned
- 1997-11-05 CZ CZ19991628A patent/CZ295984B6/cs not_active IP Right Cessation
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JP2008088055A (ja) * | 1995-10-12 | 2008-04-17 | Cabot Corp | 五酸化ニオブ及びタンタル化合物 |
JP2011144110A (ja) * | 1995-10-12 | 2011-07-28 | Cabot Corp | 五酸化ニオブ及びタンタル化合物 |
JP2002525847A (ja) * | 1998-09-10 | 2002-08-13 | エイチ・シー・スタルク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 焼結された耐火性金属層、特に土酸金属電解コンデンサーまたは陽極を製造するためのペースト |
JP2011023745A (ja) * | 1999-05-12 | 2011-02-03 | Cabot Corp | 高キャパシタンスニオブ粉末及び電解キャパシターアノード |
JP2002544677A (ja) * | 1999-05-12 | 2002-12-24 | キャボット コーポレイション | 高キャパシタンスニオブ粉末及び電解キャパシターアノード |
JP2004247299A (ja) * | 2003-02-05 | 2004-09-02 | Wc Heraeus Gmbh | ニオブ線材、その製造法および該ニオブ線材の使用 |
US8262813B2 (en) | 2003-02-05 | 2012-09-11 | Heraeus Materials Technology Gmbh & Co. Kg | Oxygen-enriched niobium wire |
JP4638675B2 (ja) * | 2003-02-05 | 2011-02-23 | ヴェー ツェー ヘレーウス ゲゼルシャフト ミット ベシュレンクテル ハフツング | ニオブ線材、その製造法および該ニオブ線材の使用 |
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JPWO2008001774A1 (ja) * | 2006-06-26 | 2009-11-26 | 三井金属鉱業株式会社 | ニオブ酸化物の製造方法及び一酸化ニオブ |
JP2008010747A (ja) * | 2006-06-30 | 2008-01-17 | Sanyo Electric Co Ltd | 電解コンデンサおよびその製造方法 |
WO2010050558A1 (ja) | 2008-10-29 | 2010-05-06 | 昭和電工株式会社 | コンデンサ素子の製造方法 |
JP2014022749A (ja) * | 2012-07-19 | 2014-02-03 | Avx Corp | 高電圧での性能を改良した固体電解コンデンサ |
Also Published As
Publication number | Publication date |
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JP4213222B2 (ja) | 2009-01-21 |
IL129832A0 (en) | 2000-02-29 |
US6165623A (en) | 2000-12-26 |
DE69725880T3 (de) | 2012-01-19 |
BR9712906A (pt) | 2002-01-02 |
CA2271780A1 (en) | 1998-05-14 |
EE9900189A (et) | 1999-12-15 |
AU5162798A (en) | 1998-05-29 |
PT946323E (pt) | 2004-03-31 |
EP0946323A1 (en) | 1999-10-06 |
CZ295984B6 (cs) | 2005-12-14 |
WO1998019811A1 (en) | 1998-05-14 |
EP0946323B1 (en) | 2003-10-29 |
US6420043B1 (en) | 2002-07-16 |
CZ162899A3 (cs) | 2000-05-17 |
DE69725880D1 (de) | 2003-12-04 |
DE69725880T2 (de) | 2004-05-13 |
EP0946323B2 (en) | 2011-06-15 |
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