JP2002502108A - 電磁放射を用いた半導体の表面変更 - Google Patents

電磁放射を用いた半導体の表面変更

Info

Publication number
JP2002502108A
JP2002502108A JP2000524812A JP2000524812A JP2002502108A JP 2002502108 A JP2002502108 A JP 2002502108A JP 2000524812 A JP2000524812 A JP 2000524812A JP 2000524812 A JP2000524812 A JP 2000524812A JP 2002502108 A JP2002502108 A JP 2002502108A
Authority
JP
Japan
Prior art keywords
layer
wafer
chamber
silicate glass
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000524812A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002502108A5 (https=
Inventor
アシュラフ アール クサーン
ササンガン ラマナサン
ギオヴァニ アントニオ フォッギアト
Original Assignee
クエスター テクノロジー インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by クエスター テクノロジー インコーポレイテッド filed Critical クエスター テクノロジー インコーポレイテッド
Publication of JP2002502108A publication Critical patent/JP2002502108A/ja
Publication of JP2002502108A5 publication Critical patent/JP2002502108A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6509—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to electromagnetic radiation, e.g. UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000524812A 1997-12-08 1998-11-19 電磁放射を用いた半導体の表面変更 Pending JP2002502108A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/986,916 US6015759A (en) 1997-12-08 1997-12-08 Surface modification of semiconductors using electromagnetic radiation
US08/986,916 1997-12-08
PCT/US1998/024998 WO1999030353A1 (en) 1997-12-08 1998-11-19 Surface modification of semiconductors using electromagnetic radiation

Publications (2)

Publication Number Publication Date
JP2002502108A true JP2002502108A (ja) 2002-01-22
JP2002502108A5 JP2002502108A5 (https=) 2006-01-05

Family

ID=25532874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000524812A Pending JP2002502108A (ja) 1997-12-08 1998-11-19 電磁放射を用いた半導体の表面変更

Country Status (7)

Country Link
US (1) US6015759A (https=)
EP (1) EP1038307B1 (https=)
JP (1) JP2002502108A (https=)
KR (1) KR100672066B1 (https=)
AU (1) AU1600399A (https=)
TW (1) TW445527B (https=)
WO (1) WO1999030353A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005158796A (ja) * 2003-11-20 2005-06-16 Ushio Inc 処理装置
JP2009543355A (ja) * 2006-07-03 2009-12-03 アプライド マテリアルズ インコーポレイテッド 進歩型フロントエンド処理のためのクラスターツール
WO2017073396A1 (ja) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
JP2019509373A (ja) * 2016-02-20 2019-04-04 ウニヴェルズィテート カッセルＵｎｉｖｅｒｓｉｔａｅｔ Ｋａｓｓｅｌ 熱可塑性物質表面上でシリコーンの付着性を改善するための方法

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US5954884A (en) 1997-03-17 1999-09-21 Fsi International Inc. UV/halogen metals removal process
US6165273A (en) * 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
JPH11279773A (ja) * 1998-03-27 1999-10-12 Tomoo Ueno 成膜方法
US6221168B1 (en) 1998-06-16 2001-04-24 Fsi International, Inc. HF/IPA based process for removing undesired oxides form a substrate
US6759306B1 (en) 1998-07-10 2004-07-06 Micron Technology, Inc. Methods of forming silicon dioxide layers and methods of forming trench isolation regions
US6451714B2 (en) * 1998-08-26 2002-09-17 Micron Technology, Inc. System and method for selectively increasing surface temperature of an object
JP2000294530A (ja) * 1999-04-06 2000-10-20 Nec Corp 半導体基板の洗浄方法及びその洗浄装置
US6272768B1 (en) * 1999-11-12 2001-08-14 Michael J. Danese Apparatus for treating an object using ultra-violet light
US6319809B1 (en) 2000-07-12 2001-11-20 Taiwan Semiconductor Manfacturing Company Method to reduce via poison in low-k Cu dual damascene by UV-treatment
DE10143997B4 (de) * 2001-09-07 2006-12-14 Infineon Technologies Ag Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einem Isolationsgraben
DE10145648B4 (de) * 2001-09-15 2006-08-24 Arccure Technologies Gmbh Bestrahlungsvorrichtung mit veränderlichem Spektrum
FR2840189B1 (fr) * 2002-05-30 2005-03-11 Jean Pierre Gemon Ecarteur hydraulique
WO2004027810A2 (en) * 2002-09-20 2004-04-01 Thomas Johnston System and method for removal of materials from an article
JP2004128195A (ja) * 2002-10-02 2004-04-22 Oki Electric Ind Co Ltd 保護膜の製造方法
US6730458B1 (en) 2003-03-03 2004-05-04 Samsung Electronics Co., Ltd. Method for forming fine patterns through effective glass transition temperature reduction
JP3972126B2 (ja) * 2004-05-28 2007-09-05 独立行政法人産業技術総合研究所 紫外線発生源、紫外線照射処理装置及び半導体製造装置
JP4971665B2 (ja) * 2006-03-31 2012-07-11 公立大学法人名古屋市立大学 皮膚疾患治療用光線治療器
US7342235B1 (en) 2006-04-27 2008-03-11 Metrosol, Inc. Contamination monitoring and control techniques for use with an optical metrology instrument
US7622310B2 (en) * 2006-04-27 2009-11-24 Metrosol, Inc. Contamination monitoring and control techniques for use with an optical metrology instrument
US7663747B2 (en) * 2006-04-27 2010-02-16 Metrosol, Inc. Contamination monitoring and control techniques for use with an optical metrology instrument
JP5052071B2 (ja) * 2006-08-25 2012-10-17 株式会社明電舎 酸化膜形成方法とその装置
US20080179286A1 (en) * 2007-01-29 2008-07-31 Igor Murokh Dielectric plasma chamber apparatus and method with exterior electrodes
US20080302400A1 (en) * 2007-06-05 2008-12-11 Thomas Johnston System and Method for Removal of Materials from an Article
US7858532B2 (en) 2007-08-06 2010-12-28 United Microelectronics Corp. Dielectric layer structure and manufacturing method thereof
TWI558655B (zh) * 2007-12-21 2016-11-21 首威氟化物有限公司 微機電系統之製造方法
US8022377B2 (en) * 2008-04-22 2011-09-20 Applied Materials, Inc. Method and apparatus for excimer curing
US20110056513A1 (en) * 2008-06-05 2011-03-10 Axel Hombach Method for treating surfaces, lamp for said method, and irradiation system having said lamp
CN102203962A (zh) * 2008-10-29 2011-09-28 株式会社爱发科 太阳能电池的制造方法、蚀刻装置和cvd装置
CN102005372A (zh) * 2009-08-31 2011-04-06 中芯国际集成电路制造(上海)有限公司 制作半导体器件的方法
CN102024681B (zh) * 2009-09-11 2012-03-07 中芯国际集成电路制造(上海)有限公司 用于制造半导体器件的方法
US8603292B2 (en) * 2009-10-28 2013-12-10 Lam Research Corporation Quartz window for a degas chamber
US8584612B2 (en) * 2009-12-17 2013-11-19 Lam Research Corporation UV lamp assembly of degas chamber having rotary shutters
US8492736B2 (en) 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
DE102011016935A1 (de) * 2011-04-13 2012-10-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
US8399359B2 (en) 2011-06-01 2013-03-19 United Microelectronics Corp. Manufacturing method for dual damascene structure
US8735295B2 (en) 2012-06-19 2014-05-27 United Microelectronics Corp. Method of manufacturing dual damascene structure
US8647991B1 (en) 2012-07-30 2014-02-11 United Microelectronics Corp. Method for forming dual damascene opening
DE102012213787A1 (de) * 2012-08-03 2014-02-06 Robert Bosch Gmbh Oberflächenstrukturierung für zellbiologische und/oder medizinische Anwendungen
US8921226B2 (en) 2013-01-14 2014-12-30 United Microelectronics Corp. Method of forming semiconductor structure having contact plug
US8962490B1 (en) 2013-10-08 2015-02-24 United Microelectronics Corp. Method for fabricating semiconductor device
JP6135764B2 (ja) * 2014-01-20 2017-05-31 ウシオ電機株式会社 デスミア処理装置
CN112578244A (zh) * 2020-12-08 2021-03-30 广西电网有限责任公司电力科学研究院 一种利用紫外光评估gis设备内部缺陷放电的方法
KR102835848B1 (ko) * 2021-07-20 2025-07-18 삼성디스플레이 주식회사 포토리소그래피 장치 및 포토레지스트 패턴 형성 방법

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2925667A1 (de) * 1979-05-22 1980-12-04 Bbc Brown Boveri & Cie Vorrichtung zur erzeugung von ozon
CH649518A5 (de) * 1979-08-02 1985-05-31 Bbc Brown Boveri & Cie Verfahren und schaltungsanordnung zur durchfuehrung von gasentladungsreaktionen.
CH642606A5 (de) * 1980-01-14 1984-04-30 Bbc Brown Boveri & Cie Ozonisator.
EP0054994B1 (de) * 1980-12-23 1984-02-01 BBC Aktiengesellschaft Brown, Boveri & Cie. Anordnung zur Erzeugung von Ozon durch elektrische Entladung
DE3576056D1 (de) * 1984-07-11 1990-03-22 Hitachi Ltd Verfahren zum herstellen einer integrierten halbleiterschaltung unter verwendung eines organischen filmes.
US5173638A (en) * 1986-07-22 1992-12-22 Bbc Brown, Boveri Ag High-power radiator
CH670171A5 (https=) * 1986-07-22 1989-05-12 Bbc Brown Boveri & Cie
CH675178A5 (https=) * 1987-10-23 1990-08-31 Bbc Brown Boveri & Cie
JPH01134932A (ja) * 1987-11-19 1989-05-26 Oki Electric Ind Co Ltd 基板清浄化方法及び基板清浄化装置
CH675504A5 (https=) * 1988-01-15 1990-09-28 Asea Brown Boveri
US5225355A (en) 1988-02-26 1993-07-06 Fujitsu Limited Gettering treatment process
JPH0228322A (ja) * 1988-04-28 1990-01-30 Mitsubishi Electric Corp 半導体基板の前処理方法
CH676168A5 (https=) * 1988-10-10 1990-12-14 Asea Brown Boveri
CH677292A5 (https=) * 1989-02-27 1991-04-30 Asea Brown Boveri
US5118989A (en) * 1989-12-11 1992-06-02 Fusion Systems Corporation Surface discharge radiation source
JPH0680657B2 (ja) * 1989-12-27 1994-10-12 株式会社半導体プロセス研究所 半導体装置の製造方法
EP0445535B1 (en) * 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Method of forming an oxide film
CH680099A5 (https=) * 1990-05-22 1992-06-15 Asea Brown Boveri
DE69113332T2 (de) * 1990-06-22 1996-03-14 Toshiba Kawasaki Kk Vakuum-Ultraviolettlichtquelle.
JPH0719777B2 (ja) * 1990-08-10 1995-03-06 株式会社半導体プロセス研究所 半導体装置の製造方法
DE59010169D1 (de) * 1990-12-03 1996-04-04 Heraeus Noblelight Gmbh Hochleistungsstrahler
DE4140497C2 (de) * 1991-12-09 1996-05-02 Heraeus Noblelight Gmbh Hochleistungsstrahler
EP0572704B1 (en) * 1992-06-05 2000-04-19 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD
US5387546A (en) * 1992-06-22 1995-02-07 Canon Sales Co., Inc. Method for manufacturing a semiconductor device
DE4222130C2 (de) * 1992-07-06 1995-12-14 Heraeus Noblelight Gmbh Hochleistungsstrahler
TW260806B (https=) * 1993-11-26 1995-10-21 Ushio Electric Inc
US5489553A (en) * 1995-05-25 1996-02-06 Industrial Technology Research Institute HF vapor surface treatment for the 03 teos gap filling deposition
US5536681A (en) * 1995-06-23 1996-07-16 Taiwan Semiconductor Manufacturing Company PE-OX/ozone-TEOS gap filling capability by selective N2 treatment on PE-OX

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005158796A (ja) * 2003-11-20 2005-06-16 Ushio Inc 処理装置
JP2009543355A (ja) * 2006-07-03 2009-12-03 アプライド マテリアルズ インコーポレイテッド 進歩型フロントエンド処理のためのクラスターツール
WO2017073396A1 (ja) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
JPWO2017073396A1 (ja) * 2015-10-28 2018-08-09 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
JP2019509373A (ja) * 2016-02-20 2019-04-04 ウニヴェルズィテート カッセルＵｎｉｖｅｒｓｉｔａｅｔ Ｋａｓｓｅｌ 熱可塑性物質表面上でシリコーンの付着性を改善するための方法
JP7075123B2 (ja) 2016-02-20 2022-05-25 ウニヴェルズィテート カッセル 熱可塑性物質表面上でシリコーンの付着性を改善するための方法

Also Published As

Publication number Publication date
EP1038307A4 (en) 2005-01-05
KR20010032904A (ko) 2001-04-25
AU1600399A (en) 1999-06-28
WO1999030353A1 (en) 1999-06-17
US6015759A (en) 2000-01-18
TW445527B (en) 2001-07-11
EP1038307A1 (en) 2000-09-27
EP1038307B1 (en) 2013-09-11
KR100672066B1 (ko) 2007-01-22
WO1999030353A9 (en) 1999-09-16

Similar Documents

Publication Publication Date Title
JP2002502108A (ja) 電磁放射を用いた半導体の表面変更
US7220685B2 (en) Method for depositing porous films
US7129175B2 (en) Method of manufacturing semiconductor device
US9123532B2 (en) Low-k dielectric damage repair by vapor-phase chemical exposure
US8481422B2 (en) Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer
US20070299239A1 (en) Curing Dielectric Films Under A Reducing Atmosphere
JP2002513203A (ja) 低κ誘電性無機／有機ハイブリッドフィルム及びその製造方法
US20040253777A1 (en) Method and apparatus for forming film
CN102460653A (zh) 成膜方法、前处理装置和处理系统
TWI581331B (zh) 降低多孔低ｋ膜的介電常數之方法
JPH09275103A (ja) 成膜方法
JP3723085B2 (ja) 半導体装置の製造方法及び製造装置
JP2001274155A (ja) 絶縁膜の形成方法
JPH06342786A (ja) 絶縁膜の形成方法および減圧ｃｖｄ装置
JPH04110471A (ja) 薄膜形成方法
JPH0927490A (ja) 堆積膜形成方法
JPH01239852A (ja) 薄膜形成方法
JP2012204693A (ja) 基板処理装置及び半導体装置の製造方法
JPH01239851A (ja) 薄膜形成装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051024

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051024

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20051208

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081002

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081020

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090316