KR100672066B1 - 전자기 방사를 이용하는 반도체들의 표면 변경 - Google Patents

전자기 방사를 이용하는 반도체들의 표면 변경 Download PDF

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KR100672066B1
KR100672066B1 KR1020007006238A KR20007006238A KR100672066B1 KR 100672066 B1 KR100672066 B1 KR 100672066B1 KR 1020007006238 A KR1020007006238 A KR 1020007006238A KR 20007006238 A KR20007006238 A KR 20007006238A KR 100672066 B1 KR100672066 B1 KR 100672066B1
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semiconductor wafer
delete delete
wafer
radiation
deposited
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Korean (ko)
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KR20010032904A (ko
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칸아쉬래프알.
라마나탄사상안
포기아토지오바니안토니오
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캐논 유.에스.에이. 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6509—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to electromagnetic radiation, e.g. UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020007006238A 1997-12-08 1998-11-19 전자기 방사를 이용하는 반도체들의 표면 변경 Expired - Lifetime KR100672066B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/986,916 US6015759A (en) 1997-12-08 1997-12-08 Surface modification of semiconductors using electromagnetic radiation
US08/986,916 1997-12-08
US8/986,916 1997-12-08
PCT/US1998/024998 WO1999030353A1 (en) 1997-12-08 1998-11-19 Surface modification of semiconductors using electromagnetic radiation

Publications (2)

Publication Number Publication Date
KR20010032904A KR20010032904A (ko) 2001-04-25
KR100672066B1 true KR100672066B1 (ko) 2007-01-22

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KR1020007006238A Expired - Lifetime KR100672066B1 (ko) 1997-12-08 1998-11-19 전자기 방사를 이용하는 반도체들의 표면 변경

Country Status (7)

Country Link
US (1) US6015759A (https=)
EP (1) EP1038307B1 (https=)
JP (1) JP2002502108A (https=)
KR (1) KR100672066B1 (https=)
AU (1) AU1600399A (https=)
TW (1) TW445527B (https=)
WO (1) WO1999030353A1 (https=)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US5954884A (en) 1997-03-17 1999-09-21 Fsi International Inc. UV/halogen metals removal process
US6165273A (en) * 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
JPH11279773A (ja) * 1998-03-27 1999-10-12 Tomoo Ueno 成膜方法
US6221168B1 (en) 1998-06-16 2001-04-24 Fsi International, Inc. HF/IPA based process for removing undesired oxides form a substrate
US6759306B1 (en) 1998-07-10 2004-07-06 Micron Technology, Inc. Methods of forming silicon dioxide layers and methods of forming trench isolation regions
US6451714B2 (en) * 1998-08-26 2002-09-17 Micron Technology, Inc. System and method for selectively increasing surface temperature of an object
JP2000294530A (ja) * 1999-04-06 2000-10-20 Nec Corp 半導体基板の洗浄方法及びその洗浄装置
US6272768B1 (en) * 1999-11-12 2001-08-14 Michael J. Danese Apparatus for treating an object using ultra-violet light
US6319809B1 (en) 2000-07-12 2001-11-20 Taiwan Semiconductor Manfacturing Company Method to reduce via poison in low-k Cu dual damascene by UV-treatment
DE10143997B4 (de) * 2001-09-07 2006-12-14 Infineon Technologies Ag Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einem Isolationsgraben
DE10145648B4 (de) * 2001-09-15 2006-08-24 Arccure Technologies Gmbh Bestrahlungsvorrichtung mit veränderlichem Spektrum
FR2840189B1 (fr) * 2002-05-30 2005-03-11 Jean Pierre Gemon Ecarteur hydraulique
WO2004027810A2 (en) * 2002-09-20 2004-04-01 Thomas Johnston System and method for removal of materials from an article
JP2004128195A (ja) * 2002-10-02 2004-04-22 Oki Electric Ind Co Ltd 保護膜の製造方法
US6730458B1 (en) 2003-03-03 2004-05-04 Samsung Electronics Co., Ltd. Method for forming fine patterns through effective glass transition temperature reduction
JP4407252B2 (ja) * 2003-11-20 2010-02-03 ウシオ電機株式会社 処理装置
JP3972126B2 (ja) * 2004-05-28 2007-09-05 独立行政法人産業技術総合研究所 紫外線発生源、紫外線照射処理装置及び半導体製造装置
JP4971665B2 (ja) * 2006-03-31 2012-07-11 公立大学法人名古屋市立大学 皮膚疾患治療用光線治療器
US7342235B1 (en) 2006-04-27 2008-03-11 Metrosol, Inc. Contamination monitoring and control techniques for use with an optical metrology instrument
US7622310B2 (en) * 2006-04-27 2009-11-24 Metrosol, Inc. Contamination monitoring and control techniques for use with an optical metrology instrument
US7663747B2 (en) * 2006-04-27 2010-02-16 Metrosol, Inc. Contamination monitoring and control techniques for use with an optical metrology instrument
EP2041774A2 (en) * 2006-07-03 2009-04-01 Applied Materials, Inc. Cluster tool for advanced front-end processing
JP5052071B2 (ja) * 2006-08-25 2012-10-17 株式会社明電舎 酸化膜形成方法とその装置
US20080179286A1 (en) * 2007-01-29 2008-07-31 Igor Murokh Dielectric plasma chamber apparatus and method with exterior electrodes
US20080302400A1 (en) * 2007-06-05 2008-12-11 Thomas Johnston System and Method for Removal of Materials from an Article
US7858532B2 (en) 2007-08-06 2010-12-28 United Microelectronics Corp. Dielectric layer structure and manufacturing method thereof
TWI558655B (zh) * 2007-12-21 2016-11-21 首威氟化物有限公司 微機電系統之製造方法
US8022377B2 (en) * 2008-04-22 2011-09-20 Applied Materials, Inc. Method and apparatus for excimer curing
US20110056513A1 (en) * 2008-06-05 2011-03-10 Axel Hombach Method for treating surfaces, lamp for said method, and irradiation system having said lamp
CN102203962A (zh) * 2008-10-29 2011-09-28 株式会社爱发科 太阳能电池的制造方法、蚀刻装置和cvd装置
CN102005372A (zh) * 2009-08-31 2011-04-06 中芯国际集成电路制造(上海)有限公司 制作半导体器件的方法
CN102024681B (zh) * 2009-09-11 2012-03-07 中芯国际集成电路制造(上海)有限公司 用于制造半导体器件的方法
US8603292B2 (en) * 2009-10-28 2013-12-10 Lam Research Corporation Quartz window for a degas chamber
US8584612B2 (en) * 2009-12-17 2013-11-19 Lam Research Corporation UV lamp assembly of degas chamber having rotary shutters
US8492736B2 (en) 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
DE102011016935A1 (de) * 2011-04-13 2012-10-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
US8399359B2 (en) 2011-06-01 2013-03-19 United Microelectronics Corp. Manufacturing method for dual damascene structure
US8735295B2 (en) 2012-06-19 2014-05-27 United Microelectronics Corp. Method of manufacturing dual damascene structure
US8647991B1 (en) 2012-07-30 2014-02-11 United Microelectronics Corp. Method for forming dual damascene opening
DE102012213787A1 (de) * 2012-08-03 2014-02-06 Robert Bosch Gmbh Oberflächenstrukturierung für zellbiologische und/oder medizinische Anwendungen
US8921226B2 (en) 2013-01-14 2014-12-30 United Microelectronics Corp. Method of forming semiconductor structure having contact plug
US8962490B1 (en) 2013-10-08 2015-02-24 United Microelectronics Corp. Method for fabricating semiconductor device
JP6135764B2 (ja) * 2014-01-20 2017-05-31 ウシオ電機株式会社 デスミア処理装置
WO2017073396A1 (ja) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
DE102016002011A1 (de) * 2016-02-20 2017-08-24 Universität Kassel Verfahren zur Haftverbesserung von Silikon auf einer thermoplastischen Oberfläche
CN112578244A (zh) * 2020-12-08 2021-03-30 广西电网有限责任公司电力科学研究院 一种利用紫外光评估gis设备内部缺陷放电的方法
KR102835848B1 (ko) * 2021-07-20 2025-07-18 삼성디스플레이 주식회사 포토리소그래피 장치 및 포토레지스트 패턴 형성 방법

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2925667A1 (de) * 1979-05-22 1980-12-04 Bbc Brown Boveri & Cie Vorrichtung zur erzeugung von ozon
CH649518A5 (de) * 1979-08-02 1985-05-31 Bbc Brown Boveri & Cie Verfahren und schaltungsanordnung zur durchfuehrung von gasentladungsreaktionen.
CH642606A5 (de) * 1980-01-14 1984-04-30 Bbc Brown Boveri & Cie Ozonisator.
EP0054994B1 (de) * 1980-12-23 1984-02-01 BBC Aktiengesellschaft Brown, Boveri & Cie. Anordnung zur Erzeugung von Ozon durch elektrische Entladung
DE3576056D1 (de) * 1984-07-11 1990-03-22 Hitachi Ltd Verfahren zum herstellen einer integrierten halbleiterschaltung unter verwendung eines organischen filmes.
US5173638A (en) * 1986-07-22 1992-12-22 Bbc Brown, Boveri Ag High-power radiator
CH670171A5 (https=) * 1986-07-22 1989-05-12 Bbc Brown Boveri & Cie
CH675178A5 (https=) * 1987-10-23 1990-08-31 Bbc Brown Boveri & Cie
JPH01134932A (ja) * 1987-11-19 1989-05-26 Oki Electric Ind Co Ltd 基板清浄化方法及び基板清浄化装置
CH675504A5 (https=) * 1988-01-15 1990-09-28 Asea Brown Boveri
US5225355A (en) 1988-02-26 1993-07-06 Fujitsu Limited Gettering treatment process
JPH0228322A (ja) * 1988-04-28 1990-01-30 Mitsubishi Electric Corp 半導体基板の前処理方法
CH676168A5 (https=) * 1988-10-10 1990-12-14 Asea Brown Boveri
CH677292A5 (https=) * 1989-02-27 1991-04-30 Asea Brown Boveri
US5118989A (en) * 1989-12-11 1992-06-02 Fusion Systems Corporation Surface discharge radiation source
JPH0680657B2 (ja) * 1989-12-27 1994-10-12 株式会社半導体プロセス研究所 半導体装置の製造方法
EP0445535B1 (en) * 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Method of forming an oxide film
CH680099A5 (https=) * 1990-05-22 1992-06-15 Asea Brown Boveri
DE69113332T2 (de) * 1990-06-22 1996-03-14 Toshiba Kawasaki Kk Vakuum-Ultraviolettlichtquelle.
JPH0719777B2 (ja) * 1990-08-10 1995-03-06 株式会社半導体プロセス研究所 半導体装置の製造方法
DE59010169D1 (de) * 1990-12-03 1996-04-04 Heraeus Noblelight Gmbh Hochleistungsstrahler
DE4140497C2 (de) * 1991-12-09 1996-05-02 Heraeus Noblelight Gmbh Hochleistungsstrahler
EP0572704B1 (en) * 1992-06-05 2000-04-19 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD
US5387546A (en) * 1992-06-22 1995-02-07 Canon Sales Co., Inc. Method for manufacturing a semiconductor device
DE4222130C2 (de) * 1992-07-06 1995-12-14 Heraeus Noblelight Gmbh Hochleistungsstrahler
TW260806B (https=) * 1993-11-26 1995-10-21 Ushio Electric Inc
US5489553A (en) * 1995-05-25 1996-02-06 Industrial Technology Research Institute HF vapor surface treatment for the 03 teos gap filling deposition
US5536681A (en) * 1995-06-23 1996-07-16 Taiwan Semiconductor Manufacturing Company PE-OX/ozone-TEOS gap filling capability by selective N2 treatment on PE-OX

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Publication number Publication date
JP2002502108A (ja) 2002-01-22
EP1038307A4 (en) 2005-01-05
KR20010032904A (ko) 2001-04-25
AU1600399A (en) 1999-06-28
WO1999030353A1 (en) 1999-06-17
US6015759A (en) 2000-01-18
TW445527B (en) 2001-07-11
EP1038307A1 (en) 2000-09-27
EP1038307B1 (en) 2013-09-11
WO1999030353A9 (en) 1999-09-16

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