JP2002232080A5 - - Google Patents
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- Publication number
- JP2002232080A5 JP2002232080A5 JP2002005692A JP2002005692A JP2002232080A5 JP 2002232080 A5 JP2002232080 A5 JP 2002232080A5 JP 2002005692 A JP2002005692 A JP 2002005692A JP 2002005692 A JP2002005692 A JP 2002005692A JP 2002232080 A5 JP2002232080 A5 JP 2002232080A5
- Authority
- JP
- Japan
- Prior art keywords
- current
- active layer
- region
- junction
- barrier structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000004888 barrier function Effects 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 14
- 239000012535 impurity Substances 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01300447A EP1225670B1 (en) | 2001-01-18 | 2001-01-18 | Semiconductor device with current confinement structure |
| EP01300447.8 | 2001-01-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002232080A JP2002232080A (ja) | 2002-08-16 |
| JP2002232080A5 true JP2002232080A5 (OSRAM) | 2005-08-04 |
Family
ID=8181652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002005692A Withdrawn JP2002232080A (ja) | 2001-01-18 | 2002-01-15 | 電流閉じ込め構造を持つ半導体素子及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6509580B2 (OSRAM) |
| EP (1) | EP1225670B1 (OSRAM) |
| JP (1) | JP2002232080A (OSRAM) |
| DE (1) | DE60136261D1 (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10108079A1 (de) * | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| US6829275B2 (en) * | 2001-12-20 | 2004-12-07 | Bookham Technology, Plc | Hybrid confinement layers of buried heterostructure semiconductor laser |
| EP1372229B1 (en) * | 2002-06-12 | 2006-02-15 | Agilent Technologies Inc., A Delaware Corporation | Integrated semiconductor laser and waveguide device |
| EP1372228B1 (en) * | 2002-06-12 | 2006-10-04 | Agilent Technologies, Inc. - a Delaware corporation - | Integrated semiconductor laser and waveguide device |
| KR100547830B1 (ko) * | 2003-08-13 | 2006-01-31 | 삼성전자주식회사 | 집적광학장치 및 그 제조방법 |
| US7009214B2 (en) | 2003-10-17 | 2006-03-07 | Atomic Energy Council —Institute of Nuclear Energy Research | Light-emitting device with a current blocking structure and method for making the same |
| JP2005260109A (ja) * | 2004-03-15 | 2005-09-22 | Fujitsu Ltd | 光半導体素子 |
| DE102010026518B4 (de) * | 2010-07-08 | 2025-02-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip und Verfahren zur Herstellung einer Mehrzahl von Leuchtdiodenchips |
| JP5803366B2 (ja) * | 2011-07-14 | 2015-11-04 | 住友電気工業株式会社 | 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ |
| US11133649B2 (en) * | 2019-06-21 | 2021-09-28 | Palo Alto Research Center Incorporated | Index and gain coupled distributed feedback laser |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4425650A (en) * | 1980-04-15 | 1984-01-10 | Nippon Electric Co., Ltd. | Buried heterostructure laser diode |
| ES2084358T3 (es) * | 1991-05-07 | 1996-05-01 | British Telecomm | Extraccion optica del reloj. |
| JPH05167191A (ja) * | 1991-12-18 | 1993-07-02 | Furukawa Electric Co Ltd:The | 埋め込み型半導体レーザ素子 |
| JPH0722691A (ja) * | 1993-06-30 | 1995-01-24 | Mitsubishi Electric Corp | 半導体レーザとその製造方法 |
| EP0639875A1 (en) * | 1993-07-12 | 1995-02-22 | BRITISH TELECOMMUNICATIONS public limited company | Electrical barrier structure for semiconductor device |
| JPH0851250A (ja) * | 1994-08-09 | 1996-02-20 | Mitsubishi Electric Corp | 半導体レーザ |
| US5832019A (en) * | 1994-11-28 | 1998-11-03 | Xerox Corporation | Index guided semiconductor laser biode with shallow selective IILD |
| JP3386261B2 (ja) * | 1994-12-05 | 2003-03-17 | 三菱電機株式会社 | 光半導体装置、及びその製造方法 |
| JPH08213691A (ja) * | 1995-01-31 | 1996-08-20 | Nec Corp | 半導体レーザ |
| JPH0918079A (ja) * | 1995-06-27 | 1997-01-17 | Mitsubishi Electric Corp | 半導体装置の製造方法,及び半導体装置 |
| JP3241002B2 (ja) * | 1998-09-02 | 2001-12-25 | 日本電気株式会社 | 半導体レーザの製造方法 |
-
2001
- 2001-01-18 DE DE60136261T patent/DE60136261D1/de not_active Expired - Fee Related
- 2001-01-18 EP EP01300447A patent/EP1225670B1/en not_active Expired - Lifetime
- 2001-05-16 US US09/858,677 patent/US6509580B2/en not_active Expired - Lifetime
-
2002
- 2002-01-15 JP JP2002005692A patent/JP2002232080A/ja not_active Withdrawn
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