JP2002164442A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2002164442A
JP2002164442A JP2000361548A JP2000361548A JP2002164442A JP 2002164442 A JP2002164442 A JP 2002164442A JP 2000361548 A JP2000361548 A JP 2000361548A JP 2000361548 A JP2000361548 A JP 2000361548A JP 2002164442 A JP2002164442 A JP 2002164442A
Authority
JP
Japan
Prior art keywords
field
effect transistor
semiconductor device
semiconductor
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000361548A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002164442A5 (enrdf_load_stackoverflow
Inventor
Hideki Aono
英樹 青野
Kosuke Okuyama
幸祐 奥山
Kozo Watanabe
浩三 渡辺
Kenichi Kuroda
謙一 黒田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000361548A priority Critical patent/JP2002164442A/ja
Priority to TW090126194A priority patent/TW518745B/zh
Priority to US09/985,303 priority patent/US7067888B2/en
Priority to KR1020010074144A priority patent/KR20020041758A/ko
Publication of JP2002164442A publication Critical patent/JP2002164442A/ja
Publication of JP2002164442A5 publication Critical patent/JP2002164442A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8312—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83138—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different shapes or dimensions of their gate conductors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000361548A 2000-11-28 2000-11-28 半導体装置およびその製造方法 Pending JP2002164442A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000361548A JP2002164442A (ja) 2000-11-28 2000-11-28 半導体装置およびその製造方法
TW090126194A TW518745B (en) 2000-11-28 2001-10-23 Semiconductor device and its manufacturing method
US09/985,303 US7067888B2 (en) 2000-11-28 2001-11-02 Semiconductor device and a method of manufacturing the same
KR1020010074144A KR20020041758A (ko) 2000-11-28 2001-11-27 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000361548A JP2002164442A (ja) 2000-11-28 2000-11-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2002164442A true JP2002164442A (ja) 2002-06-07
JP2002164442A5 JP2002164442A5 (enrdf_load_stackoverflow) 2006-03-09

Family

ID=18832968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000361548A Pending JP2002164442A (ja) 2000-11-28 2000-11-28 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US7067888B2 (enrdf_load_stackoverflow)
JP (1) JP2002164442A (enrdf_load_stackoverflow)
KR (1) KR20020041758A (enrdf_load_stackoverflow)
TW (1) TW518745B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347423A (ja) * 2002-05-28 2003-12-05 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US6844573B1 (en) * 2002-08-28 2005-01-18 Advanced Micro Devices, Inc Structure for minimizing hot spots in SOI device
KR20050085461A (ko) * 2002-12-10 2005-08-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 다운 컨버터 및 전기 부하 스위칭 방법
TWI257175B (en) * 2004-11-25 2006-06-21 Chunghwa Picture Tubes Ltd Production of lightly doped drain of low-temperature poly-silicon thin film transistor
CN100447964C (zh) * 2004-11-26 2008-12-31 中华映管股份有限公司 薄膜晶体管的制作方法
US7183159B2 (en) * 2005-01-14 2007-02-27 Freescale Semiconductor, Inc. Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices
US9990459B2 (en) 2016-03-18 2018-06-05 International Business Machines Corporation Checking wafer-level integrated designs for antenna rule compliance
US10346580B2 (en) 2016-03-25 2019-07-09 International Business Machines Corporation Checking wafer-level integrated designs for rule compliance

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3095564B2 (ja) * 1992-05-29 2000-10-03 株式会社東芝 半導体装置及び半導体装置の製造方法
JP2859288B2 (ja) * 1989-03-20 1999-02-17 株式会社日立製作所 半導体集積回路装置及びその製造方法
US5572480A (en) * 1990-02-09 1996-11-05 Hitachi Ltd. Semiconductor integrated circuit device and process for fabricating the same
KR100199258B1 (ko) * 1990-02-09 1999-06-15 가나이 쓰도무 반도체집적회로장치
JP3474589B2 (ja) * 1992-04-17 2003-12-08 株式会社デンソー 相補型ｍｉｓトランジスタ装置
JP3055424B2 (ja) * 1994-04-28 2000-06-26 株式会社デンソー Ｍｉｓ型半導体装置の製造方法
US5650340A (en) * 1994-08-18 1997-07-22 Sun Microsystems, Inc. Method of making asymmetric low power MOS devices
JP3008154B2 (ja) * 1994-12-19 2000-02-14 セイコーインスツルメンツ株式会社 半導体装置の製造方法
JP3239202B2 (ja) * 1995-12-01 2001-12-17 シャープ株式会社 Ｍｏｓトランジスタ及びその製造方法
US5830788A (en) * 1996-06-21 1998-11-03 Matsushita Electric Industrial Co., Ltd. Method for forming complementary MOS device having asymmetric region in channel region
JP3544833B2 (ja) * 1997-09-18 2004-07-21 株式会社東芝 半導体装置及びその製造方法
TW451317B (en) * 2000-03-24 2001-08-21 Vanguard Int Semiconduct Corp Manufacturing method of asymmetrical source/drain of DRAM cell
JP2001351383A (ja) * 2000-06-07 2001-12-21 Mitsubishi Electric Corp 半導体集積回路装置

Also Published As

Publication number Publication date
US7067888B2 (en) 2006-06-27
US20020063284A1 (en) 2002-05-30
TW518745B (en) 2003-01-21
KR20020041758A (ko) 2002-06-03

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