US20150325647A1

US20150325647A1 - INTEGRATED CIRCUIT (IC) CHIP HAVING BOTH METAL AND SILICON GATE FIELD EFFECT TRANSISTORs (FETs) AND METHOD OF MANUFACTURE

Info

Publication number: US20150325647A1
Application number: US14/663,256
Authority: US
Inventors: Narasimhulu Kanike
Original assignee: Individual
Current assignee: GlobalFoundries Inc
Priority date: 2011-05-16
Filing date: 2015-03-19
Publication date: 2015-11-12
Also published as: US20120292664A1; US9012283B2

Abstract

Field Effect Transistors (FETs), Integrated Circuit (IC) chips including the FETs, and a method of forming the FETs on ICs. FET locations are defined on a layered semiconductor wafer, preferably a Silicon On Insulator (SOI) wafer. One or more FET locations are defined as silicon gate locations and remaining as Replacement Metal Gate (RMG) FET locations with at least one of each on the IC. Polysilicon gates are formed in all FET locations. Gates in silicon gate locations are tailored, e.g., doped and silicided. Remaining polysilicon gates are replaced with metal in RMG FET locations. FETs are connected together into circuits with RMG FETs being connected to silicon gate FETs.

Description

CROSS REFERENCE TO RELATED APPLICATION

The present invention is a continuation of U.S. patent application Ser. No. 13/108,213 (Attorney Docket No. FIS920110047US1), “INTEGRATED CIRCUIT (IC) CHIP HAVING BOTH METAL AND SILICON GATE FIELD EFFECT TRANSISTORs (FETs) AND METHOD OF MANUFACTURE” to Narasimhulu Kanike, filed May 16, 2011, assigned to the assignee of the present invention and incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention
The present invention generally relates to Integrated Circuit (IC) manufacture and more particularly to reducing costs in semiconductor chip manufacture of integrated circuits with short channel Field Effect Transistors (FETs).
2. Background Description
Semiconductor technology and chip manufacturing advances have resulted in a steady decrease of chip feature size to increase on-chip circuit switching frequency (circuit performance) and the number of transistors (circuit density). Shrinking/reducing device or field effect transistor (FET) feature sizes and, correspondingly, device minimum dimensions including horizontal dimensions (e.g., minimum channel length) and vertical dimensions (e.g., channel layer depth, gate dielectric thickness, junction depths and etc.) shrinks device size for increased device density and device performance, as well as reduces device operating conditions, i.e., chip and correspondingly, device supply voltages and voltage swings.
Generally, all other factors being constant, the active power consumed by a given unit increases linearly with switching frequency, i.e., performance. Thus, notwithstanding the decrease of chip supply voltage, chip power consumption has increased as well. Both at the chip and system levels, cooling and packaging costs have escalated as a natural result of this increase in chip power. Especially for low end systems (e.g., handhelds, portable and mobile systems), where battery life is crucial, reducing net power consumption is important. However, such a power reduction must come without degrading chip/circuit performance below acceptable levels.
To minimize semiconductor circuit power consumption, most Integrated Circuits (ICs) are made in the well-known complementary insulated gate FET technology known as CMOS. Moreover, state of the art CMOS chips are frequently made in a silicon on insulator (SOI) technology, where CMOS devices are formed in a thin uniform silicon surface layer. Whether on a bulk wafer or in SOI, typical CMOS circuit includes paired complementary devices, i.e., an n-type FET (NFET) paired with a corresponding p-type FET (PFET), usually gated by the same signal.
In an ideal NFET, for example, current only flows when the gate to source voltage (V_gs) exceeds the device threshold voltage (V_T) and is determined in part by the amount which it exceeds V_T, i.e., by V_gs−V_T. PFETs operate analogously. FET drain to source current (I_ds, which is considered DC current and so, DC power (I_dsV_supply) consumed) is dependent upon circuit conditions, device characteristics (e.g., width, length, channel mobility and threshold voltage) and device voltages.
Since the pair of devices in an ideal inverter have operating characteristics that are, essentially, opposite each other, when one device (e.g., the NFET) is on and conducting (modeled simply as a closed switch), the other device (the PFET) is off, not conducting (ideally modeled as an open switch) and, vice versa. Thus, ideally, there is no static or DC current path in a typical CMOS circuit and ideal CMOS circuits use no static or DC power and only consume transient power from charging and discharging capacitive loads.
In practice, however, typical FETs are much more complex than switches. So, transient power for circuit loads (from switching currents) accounts for only a portion of CMOS chip power. Especially since device V_Tis directly proportional to gate dielectric thickness and also dependent on channel length, as FET features (including gate dielectric and channel length and thickness) shrink, current may continue to flow through off FETs causing what is known as subthreshold current. Subthreshold current is current conduction at gate biases below FET threshold and is directly proportional to gate width. Also, gate oxide leakage also became a major source static power loss. By replacing gate oxide with high-k dielectrics most of this gate oxide leakage has been eliminated.
However, polysilicon cannot be used with high-k dielectrics. Also, parasitic circuit resistances reduce performance and complicate design. A source of parasitic circuit resistances has been in the polysilicon used to form FET gates. Consequently, polysilicon is being replaced with wok function metal and aluminum in what is known as Replacement Metal Gate (RMG) FET technologies.
Further, reducing RMGFET lengths has degraded device transconductances (Gm/Gds) in addition to increasing subthreshold current. For a particular device, subthreshold current increases exponentially with the magnitude of the device's drain to source voltage (V_ds) and reduces exponentially with the magnitude of the device's V_T.
Subthreshold current is especially troublesome in achieving what is known as low V_Tdevices, where the V_Tmay be less than 100 millivolts (100 mV). Since these and other effects become more pronounced as the devices become shorter, they are commonly known collectively as short channel effects (SCEs). Metal gates in RMGFETS, even with high work function metals, have a lower work function than polysilicon. RMGFETs require lower channel doping levels or counter doping for low V_Tdevices than equivalent polysilicon gate devices. So, low V_TRMGFETs are much more susceptible to short channel effects than equivalent polysilicon gate devices and RMGPFETs are worse than RMGNFETs.
Consequently, especially for complex chips and arrays with a large number of devices, short channel effects can be overwhelming. When multiplied by the millions and even billions of devices on a state of the art IC, even 100 picoAmps (100 pA) of leakage in each of a million circuits, for example, results in chip leakage on the order of 100 milliAmps (100 mA).
Further, these short channel effects are much worse at operating conditions beyond nominal, e.g., higher supply voltages. However, frequently ICs require some devices to operate at higher voltages, e.g., in analog applications and in Input/Output (I/O) building blocks. For these applications devices with process normal (low V_T) but thicker than nominal gate dielectric are essential. Typically, to achieve low V_TSchannel doping is selectively reduced or channels are selectively counter doped, either of which degrades device performance.
Thus, there exists a need in Integrated Circuits (ICs) for higher performance PFETs with reduced short channel effects; and more particularly, to reduce PFET V_TSand channel lengths in ICs without reduced/counter doping channels even while minimizing PFET short channel effects.

SUMMARY OF THE INVENTION

It is an aspect of the invention to reduce short channel effects in Integrated Circuits (ICs) without impairing performance;
It is another aspect of the invention to reduce PFET V_TSand channel lengths with minimal increase in PFET short channel effects;
It is yet another aspect of the invention to reduce short channel effects in low V_T, short channel IC PFETs while improving IC performance.
The present invention relates to Field Effect Transistors (FETs), Integrated Circuit (IC) chips including the FETs, and a method of forming the FETs on ICs. FET locations are defined on a layered semiconductor wafer, preferably a Silicon On Insulator (SOI) wafer. One or more FET locations are defined as silicon gate locations and remaining as Replacement Metal Gate (RMG) FET locations with at least one of each on the IC. Polysilicon gates are formed in all FET locations. Gates in silicon gate locations are tailored, e.g., doped and silicided. Remaining polysilicon gates are replaced with metal in RMG FET locations. FETs are connected together into circuits with RMG FETs being connected to silicon gate FETs.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, aspects and advantages will be better understood from the following detailed description of a preferred embodiment of the invention with reference to the drawings, in which:

FIGS. 1A-B show examples of steps forming semiconductor devices, polysilicon gate Field Effect Transistors (FETs), especially P-type devices, in a Replacement Metal Gate (RMG) FET manufacturing process according to a preferred embodiment of the present invention;

FIGS. 2A-B show a cross sectional example of a layered wafer, e.g., a Silicon On Insulator (SOI) wafer and device locations defined thereon according to a preferred embodiment of the present invention;

FIGS. 3A-D show an example of device formation through polysilicon device gate completion for preferred devices;

FIGS. 4A-D show a variation, wherein chip NFETs and PFETs both include RMG and polysilicon gate devices;

FIGS. 5A-D show an example of RMG device formation after polysilicon device gate formation;

FIG. 6 shows an example of normal chip wiring in preferred chips;

FIG. 7 shows an optional fabrication variation suitable for analog applications;

FIGS. 8A-8C show forming fuses or resistors with the polysilicon gate and RMG devices;

FIG. 9 shows an example of normal chip wiring to fuses and devices in preferred chips;

FIG. 10 shows an example of a wafer with chips manufactured according to a preferred embodiment of the present invention.

DESCRIPTION OF PREFERRED EMBODIMENTS

Turning now to the drawings and, more particularly, FIG. 1A shows a first example of steps in a method 100 for forming semiconductor devices, polysilicon gate Field Effect Transistors (FETs), especially P-type devices, in a Replacement Metal Gate (RMG) FET manufacturing process according to a preferred embodiment of the present invention. Since in RMG nominal PFET devices are not band edged for the gate work function, for certain doping levels, RMGPFETs typically have higher threshold voltages (i.e., the magnitude of the V_TS) compared to corresponding polysilicon gate devices with the same doping profile and with the inversion layer thickness (T_inv) matched.
For a typical state of the art Silicon On Insulator (SOI) process, the PFET metal work function is targeted, best case, at about 100 millivolt (100 mV) from the band edge. Thus, by selectively using a polysilicon gate instead of metal, the same preferred polysilicon gate PFET may be a Super Low V_T(SLVT). These preferred SLVT devices have threshold voltage that may on the order of 100 mv lower than the V_Tof RMGPFETs on the same chip and/or in the same circuit. While normally gate leakage is not a major concern for these preferred SLVT devices, gate oxide thickness may be tailored to trade gate leakage against V_Tand to offer devices suitable for analog applications.
IC fabrication begins 102 with a layered wafer and defining 104 device locations on the wafer. Locations may be defined by forming islands in the surface layer of the wafer. Some of the device locations are identified 106 for silicon gate devices. Silicon gates are formed with gate dielectric 108, wherein the silicon gates are the gates of the silicon gate devices and dummy gates for RMG devices. Silicon gate are tailored 110 electrically, e.g., doped and silicided. Dummy gates are replaced 112 with metal. Wiring is formed 114 connecting devices together into circuits and circuits together on chips. Finally, BEOL fabrication continues 116, completing chips.
FIG. 1B shows another example of forming polysilicon gate FETs and RMGFETs as in FIG. 1A in more detail. First in 104′, the surface layer of the layered wafer is segmented into islands, e.g., using shallow trench isolation (STI), each island identifying a location of one or more devices. If the IC is to include RMGPFETs or thicker oxide polysilicon gate FETs, an Extra gate Dielectric (ED oxide) layer is formed 1062 normally. The ED oxide is removed 1064 from the SLVT poly gate locations, e.g., using a suitable mask and etch. A gate oxide layer is formed 1080 on the wafer and a polysilicon layer is formed on the gate oxide layer. The polysilicon is patterned normally 1082, the wafer is implanted with a halo and extension implant and annealed, e.g., using a rapid thermal anneal (RTA). Spacers are formed along the patterned polysilicon sidewalls and source/drain regions are formed 1084. The polysilicon is exposed and implanted 1100 in silicon gate device locations. The polysilicon gates are silicided. The exposed silicided gates are covered 1102 with a dielectric, e.g., a flowable oxide. Remaining undoped poly is removed and replaced with metal 112′.
FIG. 2A-B shows a cross sectional example of a layered wafer 120, e.g., a SOI wafer (provided in 102 of FIG. 1A) and device locations defined 104 according to a preferred embodiment of the present invention. In this example, the layered wafer 120 includes a Silicon (Si) substrate 122, an insulator layer 124, e.g., Buried OXide (BOX), on the Si substrate 122, and a Si surface layer 126 on the BOX layer 124. The thicknesses of these layers 122, 124, 126 is process dependent and may be any thickness necessary for the selected SOI process.
Device formation begins (and 104′ in FIG. 1B) by segmenting the surface layer 126, to define islands 128, 130 in FIG. 2B. Preferably, the islands 128, 130 are defined using a well-known STI technique, e.g., patterning and etching the layer 124 and filling between the islands with STI oxide 132. Although STI oxide 132 is shown in the Figures as being distinct from BOX layer 124, this is for example only. Typically, below the surface layer 126, the STI oxide merges with and is indistinguishable from the BOX layer 124. The segmented surface layer 126, which may have been previously body doped, is channel doped normally N or P-type, depending on the type of devices being formed, 106, 1060. Alternately body doping may be done prior to STI formation. In this example, both Islands are doped N-type for PFETs.
Next, an optional ED oxide layer (not shown) may be formed 1062 on the wafer 120. The ED oxide, if formed, is masked 1064 and removed from islands 128, 130 in exposed areas where thick oxide devices are not being formed. Preferably, the mask is removed with the exposed oxide in an integrated oxide and resist removal. A thin gate dielectric layer is formed 108, 1080 on the surface, e.g., a thermal oxide followed by nitridation. This gate dielectric acts as a dummy interfacial layer for RMG devices, e.g., formed on islands 128, and gate dielectric for preferred polysilicon gate devices on islands 130. Preferably, the gate dielectric is less than 1.5 nanometers (1.5 nm) thick, preferably 1.0 nm thick, and chosen such that Tiny for the polysilicon devices, 1.3-1.5 nm, is matched to the RMG devices. A polysilicon layer less than 50 nm thick, preferably 25 nm thick, is deposited on the gate dielectric layer.
FIGS. 3A-D show an example of device formation through polysilicon device gate completion for P-type devices. First, the polysilicon layer and gate dielectric layer are patterned 1082, e.g., using a typical state of the art mask and etch technique, which defines polysilicon gates 134, 136 on dielectric 138, 140 in RMG device locations 142 and in preferred polysilicon gate device locations 144. The polysilicon gates 134 are, essentially sacrificial polysilicon gates and polysilicon gates 136 are gates of the preferred poly gate devices. The islands 128, 130 are implanted with a suitable halo and extension implant for the particular selected device type, P-type or N-type.
Next, a spacer dielectric (e.g., nitride) layer is conformally formed and patterned, e.g., using a suitable mask an etch techniques, leaving dielectric segments 146, 148 as gate sidewalls and covering the polysilicon gates 134, 136 to surface layer islands 128, 130. Then, the exposed portions of the surface layer islands 128, 130 are recessed 1084 and filled with a doped semiconductor, e.g., Silicon Germanium (SiGe), to form source/drain regions 150. A conformable stress layer 152 is formed on the wafer, e.g., a conformable nitride layer is deposited. Then, the wafer 120 is covered with a flowable dielectric layer 154, e.g., flowable oxide.
In FIG. 3B the wafer is masked 156 to protect areas where silicon gate devices are not being tailored, e.g., RMG FET islands 128. Then, in FIG. 3C the exposed silicon gate areas are etched 110, 1100 with a timed etch, e.g., using an anisotropic Reactive Ion Etch (RIE). The RIE removes the flowable oxide 154 to expose the nitride segment 148 on the polysilicon gate 136. A nitride RIE removes exposed horizontal portions of nitride segment 148 and exposes the gate 136 with only gate sidewalls 148′ remaining along the polysilicon gates 136. The exposed polysilicon gates 136 are implanted, e.g., for a P-type FET with a P⁺ implant.
The mask is removed in FIG. 3D and the wafer 120 is annealed in a doping anneal. The wafer 120 is cleaned with a typical silicide pre-clean. Then, silicide 158 is formed on the polysilicon gate 136. The silicide 158 is preferably, Cobalt Silicide (CoSi), selected to withstand thermal requirements of subsequent RMG formation.
FIGS. 4A-D show a variation on the current example of FIGS. 3B and C, wherein chip NFETs and PFETs both include RMG and polysilicon gate devices with like features labeled identically, except P-type structure features are differentiated further by -p and N-type structure features are differentiated by -n. Further, while these figures show PFETs being treated first, followed by NFETs, this is for example only and not intended as a limitation. Devices may be treated together or NFETs may be treated first, as desired at the time of manufacture.
So, first in FIG. 4A as in FIG. 3B, the wafer is masked and only the polysilicon PFET gates 136-p are uncovered. As in FIG. 3C in FIG. 4B, a RIE removes the flowable oxide over the exposed flowable nitride layer 152 and exposes upper portions of segment 148 on the polysilicon gate 136-p. A nitride RIE removes exposed portions of segment 148 to expose the gate 136-p, which is implanted with a P⁺ implant. In FIG. 4C as in FIGS. 4A and 3B, the wafer is masked and only the oxide above polysilicon NFET gates 136-n is uncovered. In FIG. 4D, a RIE removes the flowable oxide 154 to expose the flowable nitride layer 152 above segment 148″ on the polysilicon gate 136-n. A nitride RIE removes the upper portion of the flowable nitride layer 152 and horizontal portions of segment 148″ to expose the gate 136-n between sidewalls 148′″, for implant with a N⁺ implant.
Whether only PFET fabrication or both include polysilicon gates, fabrication continues in FIGS. 5A-D, which show an example of RMG device formation after polysilicon device gate 136 (or 136-n and -p) formation. First, the wafer 120 is re-covered 1102 with a flowable dielectric layer 154′, e.g., flowable oxide. Then in FIG. 5B, the upper portions of the flowable dielectric layer, the flowable nitride layer 152′ and the nitride segments 146 are removed 112, 112′, preferably using a typical chemical-mechanical (chem-mech) polishing (CMP) technique to expose the sacrificial polysilicon gates 134. Preferably, the CMP is highly selective to dielectric materials and stops on the silicide 158. Since CMP is only used to expose the sacrificial gates 134, the silicon gate devices 144 are relatively immune to CMP induced variations. Thus, longer channel silicon gate devices, e.g., lengths several times longer than the typical device design length, are available for analog applications.
After removing the sacrificial polysilicon gates 128, preferably, using a selective wet etch, a partial void 160 forms in FIG. 5C. Then, the dielectric 138 is removed to complete the void 160. A high-k dielectric layer, preferably, 2 nm thick, is formed in the RMG gate location and lining the void 160. The high-k dielectric is removed from the surface, e.g. using CMP, to leave the voids lined with high-k dielectric layer 162. The high-k dielectric may be any suitable high-k dielectric material, conformally deposited, and removed using CMP. Preferably, the high-k dielectric material is Zirconium Oxide (ZrO₅) or hafnium dioxide (HfO₂).
RMG gate formation is completed in FIG. 5D by filling the lined 162 RMG gate location with metal 164. The lined RMG gate location may be filled, for example, by forming a layer of work function metals, and preferably, a combination of metals such as Aluminum (Al), Titanium Nitride (TiNi), and/or Titanium Aluminum (TiAl). The work function metal layer is formed on the wafer surface using any suitable technique, followed by CMP. Alternately, the metal may be formed on the high-k dielectric layer 162 and a single CMP may be used to remove excess metal and high-k dielectric.
Thereafter, as shown in FIG. 6, processing continues normally 114. So, for example, silicide 166 is formed on device semiconductor surfaces, e.g., on SiGe source/drain regions 150. Contact pads 168 are formed through the remnant of dielectric 154′ to the silicide 166. Then, dielectric layer 154″ is re-formed on the wafer over the contact pads 168. Contacts 170 are formed through the dielectric layer 154″ to underlying metal, e.g., metal gates 164, polysilicon gates 136 and contact pads 168. A metal wiring 172 layer is formed on the wafer. Optionally, the metal wires 172 and contacts 170 may be formed in a single step, e.g., using a typical dual damascene step. Wafer/chip fabrication continues 116 normally though typical BEOL steps.
Thus, the resulting ICs have both RMG and polysilicon gate devices on the same chip and even in the same circuits or functional logic blocks (e.g., Inverters. NAND gates and NOR gates). Moreover, the polysilicon gate PFETs may have lower V_TSthan, and T_invmatched to, any corresponding RMG PFETs.
FIG. 7 shows an optional fabrication variation corresponding to FIG. 3B with identical features labeled identically, that may be suitable for analog applications or where low V_Tdevices with thicker oxide are needed. In this optional embodiment, thicker gate dielectric devices 180 may be formed on the same chips with relatively minor fabrication adjustments, depositing ED oxide 182 and selectively removing it. The polysilicon 184 in the thicker gate dielectric (ED) devices, or EDPFETs 180, is processed substantially identically to the polysilicon gates 136, as shown in FIGS. 3C and D, 5A-D and 6. This allows for longer channel polysilicon devices, that could not otherwise be included in RMGFET circuits. Moreover, these EDPFETs are relatively more immune to CMP variations.
Optionally, fuses 190 also may be formed on STI 192 with the polysilicon gates 136, beginning as shown in FIGS. 8A-8C, which correspond to FIGS. 3B and 3C with identical features labeled identically. First in FIG. 8A as in FIG. 3B, the wafer is masked 194 and the polysilicon segment(s) 190 is(are) uncovered with polysilicon PFET gates 136. A RIE removes the flowable oxide 154 and flowable nitride 146 over, and exposes the horizontal surfaces of, nitride segments 148 and 196. A nitride RIE removes the exposed horizontal surfaces of nitride segments 148 and 196 in FIG. 8B. Removing horizontal surfaces of nitride segments 148 and 196 exposes the gates 136 and polysilicon segment(s) 190. Then, the mask 194, e.g., a photoresist, is removed normally.
Next, the polysilicon PFET gates 136 are implanted in FIG. 8C, substantially as in FIG. 3B. So prior to implant, the wafer is masked 198 again and only the polysilicon PFET gates 136 are left unmasked. A RIE removes the flowable oxide 152 over the polysilicon gate 136 to expose flowable nitride layer 150 above nitride segment 146. A nitride RIE removes horizontal portions of nitride layers 150, 146 and exposes the gate 136, which is implanted with a P⁺ implant.
The mask 198 is removed in FIG. 8C and the wafer 120 is annealed in a doping anneal. The wafer 120 is cleaned with a typical silicide pre-clean. Then, silicide 158, 200 is formed on the polysilicon gates 136 and fuse segments 190. Preferably, the silicide 158, 200 is CoSi.
Thereafter, as shown in FIG. 9, processing continues normally, substantially as described for FIG. 6. So again, silicide 158 is formed on device semiconductor surfaces, e.g., on SiGe source/drain regions 150. Contact pads 168 are formed through the remnant of dielectric 154′ to the silicide 166. Then, dielectric layer 154″ is re-formed on the wafer over the contact pads 168. Contacts 170, 202 are formed through the dielectric layer 154″ to underlying metal, e.g., metal gates 164, polysilicon gates 136 and contact pads 168 and fuses 190. Metal wiring 172 layer is formed on the wafer. Optionally, the metal wires 172 and contacts 170, 202 again may be formed in a single, e.g., a dual damascene step. Wafer/chip fabrication continues normally though typical back end of the line (BEOL) steps.
FIG. 10 shows an example of a wafer 210 with chips 212 manufactured according to a preferred embodiment of the present invention. The chips include connected circuits 214, one or more of which includes preferred FETs.
Thus advantageously, silicon gate PFETs (and silicon eFuses) may be mixed selectively with metal gate devices on RMGFET ICs to provide low V_TPFETs without compromising short channel effects and without adding significant manufacturing costs. Manufacturing costs increase only slightly because the present invention uses what was previously disposable, sacrificial polysilicon shapes in a process that adds only low critical manufacturing steps, i.e., mask and etch steps to remove dielectric layers and an implant and silicide to tailor the polysilicon gates. Moreover, this may be extended to form thicker gate dielectric PFETs by selectively forming thick oxide, and to NFETs as well with the addition of a single implant mask. These thicker dielectric, low V_Tdevices have analog applications and are very useful for achieving high dynamic ranges for analog/radio frequency (RF) circuits.
In addition, preferred low V_Tdevices are produced without degrading device transconductances (Gm/Gds), otherwise apparent in a low V_Tdevices realized using lower channel doping or compensation doping. Neither do preferred low V_Tdevices suffer from body resistance (R_body) penalties which is also advantageous for high frequency analog devices.
While the invention has been described in terms of preferred embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the appended claims. It is intended that all such variations and modifications fall within the scope of the appended claims. Examples and drawings are, accordingly, to be regarded as illustrative rather than restrictive.

Claims

What is claimed is:

1. An Integrated Circuit (IC) chip including a plurality of Field Effect Transistor (FET) connected together into one or more circuits, said IC comprising:

a plurality of silicon islands in a surface silicon layer of a Silicon On Insulator (SOI) wafer;

a FET having a metal gate on at least one said silicon island, each said FET being a metal gate FET;

one or more FET having a polysilicon gate on one or more other said silicon island, each said FET being a silicon gate FET; and

wiring connecting FETs together into one or more IC circuits.

2. An IC as in claim 1, wherein silicon gate FETs comprise a silicon channel, a gate oxide layer on said silicon channel, and a polysilicon gate above said gate oxide layer.

3. An IC as in claim 2, wherein shallow trench oxide (STI) separates said silicon islands, said IC further comprising at least one fuse comprising:

a polysilicon segment on oxide, an upper surface of said oxide being coplanar with an upper surface of an adjacent island;

a silicide layer on said polysilicon segment; and

contacts at opposite ends of said silicide layer.

4. An IC as in claim 2, wherein said high-k dielectric is selected from Zirconium Oxide (ZrO₅) and hafnium dioxide (HfO₂), said metal gate includes a work function metal selected from Aluminum (Al), Titanium Nitride (TiNi), and Titanium Aluminum (TiAl) and said silicon gate FETs and said metal gate FETs comprise further comprise Silicon Germanium (SiGe) source/drains.

5. An IC as in claim 4, further comprising a Nickel silicide (NiSi) layer on each SiGe source/drain and a tungsten pad on each said NiSi layer, said wiring connecting to the tungsten pads.

6. An IC as in claim 5, wherein said metal gate FETs comprise a silicon channel, a hi-k dielectric layer on said silicon channel, and a metal gate on said a hi-K dielectric layer.

7. An IC as in claim 6, wherein said gate oxide layer in one or more of said silicon gate FETs is thicker than other silicon gate FETs in said IC and at least one said silicon gate FET is a P-type FET (PFET).

8. An IC as in claim 1, wherein

silicon gate FETs comprise a silicon channel, a gate oxide layer on said silicon channel, and a polysilicon gate above said gate oxide layer; and

said metal gate FETs comprise a silicon channel, a hi-k dielectric layer on said silicon channel, and a metal gate on said a hi-K dielectric layer.

9. An IC as in claim 8, wherein said high-k dielectric is selected from Zirconium Oxide (ZrO₅) and hafnium dioxide (HfO₂), said metal gate includes a work function metal selected from Aluminum (Al), Titanium Nitride (TiNi), and Titanium Aluminum (TiAl) and said silicon gate FETs and said metal gate FETs comprise further comprise Silicon Germanium (SiGe) source/drains.

10. An IC as in claim 9, wherein said gate oxide layer in one or more of said silicon gate FETs is thicker than other silicon gate FETs in said IC and at least one said silicon gate FET is a P-type FET (PFET).

11. An IC as in claim 10, further comprising a Nickel silicide (NiSi) layer on each SiGe source/drain and a tungsten pad on each said NiSi layer, said wiring connecting to the tungsten pads.

12. An IC as in claim 11, wherein shallow trench oxide (STI) separates said silicon islands, said IC further comprising at least one fuse comprising:

a silicide layer on said polysilicon segment; and

contacts at opposite ends of said silicide layer.

13. An Integrated Circuit (IC) chip including a plurality of Field Effect Transistor (FET) connected together into one or more circuits, said IC comprising:

a plurality of silicon islands in a surface silicon layer of a Silicon On Insulator (SOI) wafer, said silicon islands being defined and separated from each other by shallow trench isolation (STI) through a surface silicon layer to a buried oxide layer;

a FET having a metal gate on at least one said silicon island, each said FET being a metal gate FET comprising a silicon channel, a hi-k dielectric layer on said silicon channel, and a metal gate on said a hi-K dielectric layer;

one or more FET having a polysilicon gate on one or more other said silicon island, each said FET being a silicon gate FET comprising a silicon channel, a gate oxide layer on said silicon channel, and a polysilicon gate above said gate oxide layer;

a gate silicide layer on each polysilicon gate;

Silicon Germanium (SiGe) source/drains at each FET;

a source/drain silicide layer on each SiGe source/drain; and

wiring to the silicide layers and metal gates connecting FETs together into one or more IC circuits.

14. A IC as in claim 13 wherein at least one said silicon gate FET being a P-type FET (PFET),

wherein one or more of said silicon gate FETs further comprise an electrolytic layer on said gate oxide layer, said polysilicon gate being on said electrolytic layer, at least one polysilicon gate being on said gate oxide layer, and

wherein said high-k dielectric is selected from Zirconium Oxide (ZrO₅) and hafnium dioxide (HfO₂), said metal gate includes a work function metal selected from Aluminum (Al), Titanium Nitride (TiNi), and Titanium Aluminum (TiAl), said gate silicide layer is cobalt silicide (CoSi), said source/drain silicide layer is Nickel silicide (NiSi) source/drain layer on each SiGe source/drain, and said further comprises a tungsten pad on each said NiSi source/drain layer, said wiring connecting to the tungsten pads.

15. A IC as in claim 13, further including at least one fuse in one circuit of said one or more IC circuits, said at least one fuse comprising:

a silicide layer on said polysilicon segment; and

contacts at opposite ends of said silicide layer, said wiring connecting said at least one fuse into one circuit, the presence of said fuse placing said one circuit in a first state, and opening said fuse placing said one circuit in a second state.

16. An IC as in claim 13, wherein said gate oxide layer in one or more of said silicon gate FETs is thicker than other silicon gate FETs in said IC and at least one said silicon gate FET is a P-type FET (PFET).

17. An Integrated Circuit (IC) chip including a plurality of Field Effect Transistor (FET) connected together into one or more circuits, said IC comprising:

a gate silicide layer on each polysilicon gate;

Silicon Germanium (SiGe) source/drains at each FET;

a source/drain silicide layer on each SiGe source/drain;

wiring to the silicide layers and metal gates connecting FETs together into one or more IC circuits; and

at least one fuse in one circuit of said one or more IC circuits, said at least one fuse comprising:

a polysilicon segment on oxide, an upper surface of said oxide being coplanar with an upper surface of an adjacent island,

a silicide layer on said polysilicon segment, and

18. A IC as in claim 17, wherein at least one said silicon gate FET being a P-type FET (PFET),

19. An IC as in claim 18, wherein said gate oxide layer in one or more of said silicon gate FETs is thicker than other silicon gate FETs in said IC and at least one said silicon gate FET is a P-type FET (PFET).