JP2002033321A - 誘電体の堆積方法 - Google Patents
誘電体の堆積方法Info
- Publication number
- JP2002033321A JP2002033321A JP2001117280A JP2001117280A JP2002033321A JP 2002033321 A JP2002033321 A JP 2002033321A JP 2001117280 A JP2001117280 A JP 2001117280A JP 2001117280 A JP2001117280 A JP 2001117280A JP 2002033321 A JP2002033321 A JP 2002033321A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- electrode
- deposited
- support
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000151 deposition Methods 0.000 title claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 11
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000005546 reactive sputtering Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 102100033041 Carbonic anhydrase 13 Human genes 0.000 description 1
- 101000867860 Homo sapiens Carbonic anhydrase 13 Proteins 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H01L21/203—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
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- H01—ELECTRIC ELEMENTS
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- H01L21/02107—Forming insulating materials on a substrate
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Abstract
て、キャパシターの一部を作る方法に関する。 【解決手段】 金属ターゲットから基材(10、11)
に金属酸化物(12)を反応性スパッタリングすること
を含む方法であって、誘電体(12)が形成されるとき
に、支持体をバイアスして、堆積している誘電体にわた
る直流電圧を提供する方法とする。この電圧は200〜
300Vでよい。
Description
電体を堆積させて、キャパシターの一部を作る方法に関
する。
デバイスに必要とされるキャパシターの大きさを減少さ
せるために、産業界は高誘電率(k)の材料を使用する
ようになってきている。1つの特に有利な材料は五酸化
タンタル(Ta2O5)であり、これは特に、約25の誘
電率を持つ候補として有望である。この材料は様々な化
学的及び物理的手段によって堆積させることができる
が、半導体に関する作業にとって最も便利なのは、活性
ビジュアル気相堆積(active visual v
apor deposition)である。この方法は
一般的に既知であり、また例えば米国特許第5,11
1,355号明細書で説明されている。この文献から
は、タンタルが、金属ターゲットの表面において酸化物
が形成されて、ターゲットからスパッタリングされる材
料の分類に属し、酸化物又は窒素化物が飛行中に又は基
材の表面において形成される他の反応性プロセスとは異
なることが分かる。場合によってはこのことから、堆積
した層を通る比較的大きい漏れ電流の問題がもたらされ
ることがある。米国特許第5,872,696号明細書
で理解されるように、これは、ピンホール及び連結して
漏れ経路を造る層内の未酸化タンタル原子の存在に部分
的に起因していると考えられる。この特許明細書では、
五酸化タンタルを更に陽極処理することによって、漏れ
電流を減少させている。これはピンホール及び/又は導
電性経路を十分に減少させて、大きい面積のキャパシタ
ーを作ることを可能にする。しかしながら、小さい面積
のキャパシターでは、比較的漏れ電流が大きい(厚さが
100Åの五酸化タンタルの層に5Vの電圧を加えたと
きに、1-6アンペアを超える程度)。
トから基材に金属酸化物を反応性スパッタリングするこ
とを含む方法であって、誘電体が形成されるときに、前
記支持体をバイアスして、堆積した誘電体をとおる直流
電圧を提供することを特徴とする、支持体上の半導体基
材に誘電体を堆積させて、キャパシターの一部を作る方
法である。
く、これを達成するために、高周波又はパルス直流電源
によって支持体をバアイスすることができる。ターゲッ
トも高周波又はパルス直流電源によってバイアスするこ
とができ、パルス電源が好ましい。
積した酸化物のプラズマ酸化工程を含むことができる。
とができ、別の第2の電極を誘電体層の上側表面に堆積
させて、複数のキャパシターを与えることできる。それ
ぞれの第2の電極の面積は、0.01cm2未満でよ
く、第2の電極で面積が0.008cm2のキャパシタ
ーを作った。
ンタルであるが、本発明の方法は、ターゲットから反応
性スパッタリングをされる任意の金属酸化物で改良を示
す。
又は以下の説明の任意の発明的組み合わせを本発明が含
むことを理解すべきである。
できるが、ここでは、添付の図を参照して、特定の態様
を例示して本発明を説明する。この添付の図は、本発明
で作った1連のキャパシターの概略の断面を示してい
る。
り、また例えばJohn L. Vossen及びWe
rner Kernの「Thin Film Proc
esses」(Academic Press社、19
78年)の第48〜53頁、第107〜109頁で説明
されている。この開示はここで参照して本発明の記載に
含める。上述の米国特許第5,872,696号明細書
と同様に、ここでは五酸化タンタルの反応性スパッタリ
ングが特に説明されている。
は、第1の電極10(典型的に窒素化チタン)を、基材
11の表面に堆積させており、その上に反応性スパッタ
リングした五酸化タンタル12を堆積させて、誘電体層
を作っている。その後、第2の電極を、穿孔マスクを通
して点状の窒素化チタン13を堆積させることによって
作る。それぞれの点状電極は、それぞれの点状電極1
3、下側領域の第1の電極10、及び中間部分の誘電体
12によって作られる1つのキャパシターを示してい
る。
電極はパルス直流電流によって電力を供給されている。
ットの」)ウェハーに関して2つの実験を行った。但
し、一方の実験では、基材を乗せる支持体をバイアスせ
ず、また第2の実験では以下のようにしてバイアスし
た。
典型的に500Å未満であるが、用途によっては、1μ
mの厚さが必要になることがある。以下に示す結果は、
100Åの厚さについてのものである。一般に比較的薄
い層が好ましい。誘電体を試験するために、上側電極と
して、穿孔マスクを通してTiN層を堆積させて、面積
が0.008cm2の点状キャパシターを作った。
ルス、パルス幅4,000ナノ秒 アルゴン流量 50sccm 酸素流量 40sccm プラテン温度 300℃ プラテンバイアス出力600W、13.65MHzの高
周波、270Vの直流バイアスをもたらす 処理時間150秒 ウェハー寸法:150mmシリコン
ルのプラズマ酸化 酸素流量 200sccm 誘導コイル出力 500ワット、400ワットで穏
やかに開始し1分間のプロセスで増加 出力密度は重要な特性であり、異なるウェハー寸法及び
容器では、異なる出力レベルが適当であり、これは実験
で定めることができる。
ことによって、点状キャパシター13について測定し
た。バイアスなしで製造したキャパシターのバッチは漏
れ電流が1-6アンペア超であったのに対して、バイアス
を行って製造したキャパシターの漏れ電流は1-8アンペ
ア未満であった。ここでは、それぞれの場合で、五酸化
タンタルの厚さは100Åであった。
872,696号明細書の陽極処理工程を行ったが、バ
イアスされた条件で漏れ電流が実質的に改良されたこと
は注目すべきである。これは、本発明では全く異なるプ
ロセスが起こっていることを強く示唆しており、またこ
れは結果として堆積した層の密度を改良できると考えら
れる。この漏れ電流改良の程度は、出願人がこのタイプ
のキャパシターの性質を有意に改良する方法を見出した
ことを意味している。
面を示している。
Claims (8)
- 【請求項1】 金属ターゲットから基材に金属酸化物を
反応性スパッタリングすることを含む、キャパシターの
一部を作るために支持体上の半導体基材に誘電体を堆積
させる方法であって、誘電体を形成するときに、前記支
持体をバイアスして、堆積している誘電体をまたぐ直流
電圧を提供することを特徴とする、キャパシターの一部
を作るために支持体上の半導体基材に誘電体を堆積させ
る方法。 - 【請求項2】 提供される前記電圧が200〜300V
である、請求項1に記載の方法。 - 【請求項3】 高周波又はパルス直流電源によって、前
記支持体をバイアすする、請求項1又は2に記載の方
法。 - 【請求項4】 前記ターゲットを高周波又はパルス直流
電源によってバイアスする、請求項1に記載の方法。 - 【請求項5】 堆積の後又は堆積の間にプラズマ酸化を
行うことを更に含む、請求項1〜4のいずれかに記載の
方法。 - 【請求項6】 前記誘電体を第1の電極上に堆積させ、
別の第2の電極を前記誘電体の上側表面に堆積させて、
複数のキャパシターを作る、請求項1〜5のいずれかに
記載の方法。 - 【請求項7】 それぞれの前記第2電極の面積が0.0
1cm2未満である、請求項6に記載の方法。 - 【請求項8】 前記金属酸化物が五酸化タンタルであ
る、請求項1〜7のいずれかに記載の方法。
Applications Claiming Priority (2)
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GB0009139A GB2361244B (en) | 2000-04-14 | 2000-04-14 | A method of depositing dielectric |
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JP (1) | JP4833429B2 (ja) |
KR (1) | KR100740748B1 (ja) |
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KR20010098445A (ko) | 2001-11-08 |
US6936481B2 (en) | 2005-08-30 |
TWI287850B (en) | 2007-10-01 |
KR100740748B1 (ko) | 2007-07-19 |
CN1326218A (zh) | 2001-12-12 |
US20030096508A1 (en) | 2003-05-22 |
GB2361244B (en) | 2004-02-11 |
GB2361244A (en) | 2001-10-17 |
GB0009139D0 (en) | 2000-05-31 |
JP4833429B2 (ja) | 2011-12-07 |
CN1203532C (zh) | 2005-05-25 |
US20010041460A1 (en) | 2001-11-15 |
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