JP2001516153A5 - - Google Patents

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Publication number
JP2001516153A5
JP2001516153A5 JP2000511189A JP2000511189A JP2001516153A5 JP 2001516153 A5 JP2001516153 A5 JP 2001516153A5 JP 2000511189 A JP2000511189 A JP 2000511189A JP 2000511189 A JP2000511189 A JP 2000511189A JP 2001516153 A5 JP2001516153 A5 JP 2001516153A5
Authority
JP
Japan
Prior art keywords
semiconductor device
layer
titanium nitride
metal layer
metal structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000511189A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001516153A (ja
Filing date
Publication date
Priority claimed from US08/924,131 external-priority patent/US5969425A/en
Application filed filed Critical
Publication of JP2001516153A publication Critical patent/JP2001516153A/ja
Publication of JP2001516153A5 publication Critical patent/JP2001516153A5/ja
Pending legal-status Critical Current

Links

JP2000511189A 1997-09-05 1998-08-31 Ｃｖｄバリア層を有するボーダーレスバイア Pending JP2001516153A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/924,131 1997-09-05
US08/924,131 US5969425A (en) 1997-09-05 1997-09-05 Borderless vias with CVD barrier layer
PCT/US1998/018012 WO1999013501A1 (en) 1997-09-05 1998-08-31 Borderless vias with cvd barrier layer

Publications (2)

Publication Number Publication Date
JP2001516153A JP2001516153A (ja) 2001-09-25
JP2001516153A5 true JP2001516153A5 (https=) 2006-05-25

Family

ID=25449751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000511189A Pending JP2001516153A (ja) 1997-09-05 1998-08-31 Ｃｖｄバリア層を有するボーダーレスバイア

Country Status (5)

Country Link
US (2) US5969425A (https=)
EP (1) EP1018152A1 (https=)
JP (1) JP2001516153A (https=)
KR (1) KR100572036B1 (https=)
WO (1) WO1999013501A1 (https=)

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US7317253B2 (en) * 2005-04-25 2008-01-08 Sony Corporation Cobalt tungsten phosphate used to fill voids arising in a copper metallization process
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US7675162B2 (en) * 2006-10-03 2010-03-09 Innovative Micro Technology Interconnect structure using through wafer vias and method of fabrication
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US7859113B2 (en) * 2007-02-27 2010-12-28 International Business Machines Corporation Structure including via having refractory metal collar at copper wire and dielectric layer liner-less interface and related method
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US9076821B2 (en) 2007-04-30 2015-07-07 Infineon Technologies Ag Anchoring structure and intermeshing structure
KR101315880B1 (ko) * 2008-07-23 2013-10-08 삼성전자주식회사 금속 배선 구조물 및 그 제조 방법
KR20120083142A (ko) * 2011-01-17 2012-07-25 삼성전자주식회사 반도체 장치 및 반도체 장치의 형성 방법
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US11133218B1 (en) * 2020-01-23 2021-09-28 Tae Young Lee Semiconductor apparatus having through silicon via structure and manufacturing method thereof
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