JP2001203332A5 - - Google Patents

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Publication number
JP2001203332A5
JP2001203332A5 JP2000361340A JP2000361340A JP2001203332A5 JP 2001203332 A5 JP2001203332 A5 JP 2001203332A5 JP 2000361340 A JP2000361340 A JP 2000361340A JP 2000361340 A JP2000361340 A JP 2000361340A JP 2001203332 A5 JP2001203332 A5 JP 2001203332A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000361340A
Other languages
Japanese (ja)
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JP2001203332A (ja
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Publication date
Priority claimed from US09/460,056 external-priority patent/US6285581B1/en
Application filed filed Critical
Publication of JP2001203332A publication Critical patent/JP2001203332A/ja
Publication of JP2001203332A5 publication Critical patent/JP2001203332A5/ja
Pending legal-status Critical Current

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JP2000361340A 1999-12-13 2000-11-28 集積された半導体デバイスを有するｍｒａｍ Pending JP2001203332A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/460056 1999-12-13
US09/460,056 US6285581B1 (en) 1999-12-13 1999-12-13 MRAM having semiconductor device integrated therein

Publications (2)

Publication Number Publication Date
JP2001203332A JP2001203332A (ja) 2001-07-27
JP2001203332A5 true JP2001203332A5 (https=) 2008-01-17

Family

ID=23827246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000361340A Pending JP2001203332A (ja) 1999-12-13 2000-11-28 集積された半導体デバイスを有するｍｒａｍ

Country Status (7)

Country Link
US (1) US6285581B1 (https=)
EP (1) EP1109169B1 (https=)
JP (1) JP2001203332A (https=)
KR (1) KR20010062244A (https=)
CN (1) CN1200430C (https=)
DE (1) DE60021997T2 (https=)
SG (1) SG88806A1 (https=)

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US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
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JP2005109263A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 磁性体素子及磁気メモリ
US6947333B2 (en) * 2003-10-30 2005-09-20 Hewlett-Packard Development Company, L.P. Memory device
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
EP1662510B1 (en) * 2004-11-30 2010-07-21 Kabushiki Kaisha Toshiba Arrangement of write lines in an MRAM device
CN100459149C (zh) * 2005-03-24 2009-02-04 株式会社日立制作所 导电控制器件
EP1934984B1 (en) 2005-09-30 2011-05-18 Nxp B.V. Nanowire magnetic random access memory
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
JP5072392B2 (ja) * 2007-03-08 2012-11-14 株式会社東芝 縦型スピントランジスタ及びその製造方法
JP2009064826A (ja) * 2007-09-04 2009-03-26 Tdk Corp スピントランジスタ及びその製造方法
JP5455313B2 (ja) * 2008-02-21 2014-03-26 株式会社東芝 磁気記憶素子及び磁気記憶装置
WO2009107780A1 (ja) * 2008-02-28 2009-09-03 日本電気株式会社 磁気抵抗記憶装置及びその動作方法
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
JP4908540B2 (ja) 2009-03-25 2012-04-04 株式会社東芝 スピンｍｏｓｆｅｔおよびリコンフィギャラブルロジック回路
US7986572B2 (en) * 2009-08-17 2011-07-26 Magic Technologies, Inc. Magnetic memory capable of minimizing gate voltage stress in unselected memory cells
JP2013089890A (ja) * 2011-10-21 2013-05-13 Toshiba Corp 磁気記憶素子
TWI559450B (zh) * 2014-04-18 2016-11-21 力晶科技股份有限公司 記憶體結構及其操作方法
RU2573200C2 (ru) * 2014-11-20 2016-01-20 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Магниторезистивная ячейка памяти и способ ее использования
CN109859785B (zh) * 2019-01-11 2020-11-06 中电海康集团有限公司 一种时钟自适应访问mram的装置
WO2020160358A1 (en) * 2019-01-31 2020-08-06 Northwestern University Magnetic memory device using doped semiconductor layer

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DE69923386T2 (de) * 1998-05-13 2005-12-22 Sony Corp. Bauelement mit magnetischem Material und Adressierverfahren dafür
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JP4076197B2 (ja) * 1999-05-19 2008-04-16 株式会社東芝 磁性素子、記憶装置、磁気再生ヘッド、３端子素子、及び磁気ディスク装置

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