JP2001177101A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JP2001177101A
JP2001177101A JP36088299A JP36088299A JP2001177101A JP 2001177101 A JP2001177101 A JP 2001177101A JP 36088299 A JP36088299 A JP 36088299A JP 36088299 A JP36088299 A JP 36088299A JP 2001177101 A JP2001177101 A JP 2001177101A
Authority
JP
Japan
Prior art keywords
film
concentration
silicon oxynitride
continuously
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP36088299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001177101A5 (https=
Inventor
Mitsunori Sakama
光範 坂間
Noriko Ishimaru
典子 石丸
Masahiko Miwa
昌彦 三輪
Michinori Iwai
道記 岩井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Sharp Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP36088299A priority Critical patent/JP2001177101A/ja
Priority to TW089126800A priority patent/TW522439B/zh
Priority to US09/739,269 priority patent/US6632708B2/en
Publication of JP2001177101A publication Critical patent/JP2001177101A/ja
Priority to US10/367,819 priority patent/US6730992B2/en
Publication of JP2001177101A5 publication Critical patent/JP2001177101A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Crystal (AREA)
JP36088299A 1999-12-20 1999-12-20 半導体装置およびその作製方法 Withdrawn JP2001177101A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP36088299A JP2001177101A (ja) 1999-12-20 1999-12-20 半導体装置およびその作製方法
TW089126800A TW522439B (en) 1999-12-20 2000-12-13 Semiconductor device and method of manufacturing the same
US09/739,269 US6632708B2 (en) 1999-12-20 2000-12-19 Semiconductor device and method of manufacturing the same
US10/367,819 US6730992B2 (en) 1999-12-20 2003-02-19 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36088299A JP2001177101A (ja) 1999-12-20 1999-12-20 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JP2001177101A true JP2001177101A (ja) 2001-06-29
JP2001177101A5 JP2001177101A5 (https=) 2004-11-18

Family

ID=18471316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36088299A Withdrawn JP2001177101A (ja) 1999-12-20 1999-12-20 半導体装置およびその作製方法

Country Status (3)

Country Link
US (2) US6632708B2 (https=)
JP (1) JP2001177101A (https=)
TW (1) TW522439B (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001217422A (ja) * 2000-01-31 2001-08-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007311542A (ja) * 2006-05-18 2007-11-29 Toshiba Matsushita Display Technology Co Ltd 薄膜トランジスタ
WO2008032543A1 (fr) * 2006-08-25 2008-03-20 Ube Industries, Ltd. Résonateur piézoélectrique à couche mince et son procédé de fabrication
JP2008160654A (ja) * 2006-12-26 2008-07-10 Ube Ind Ltd 集積化分波器
US7678627B2 (en) 2003-02-19 2010-03-16 Tpo Display Corp. Process for producing thin film transistor having LDD region
JP2014059574A (ja) * 2002-05-13 2014-04-03 Semiconductor Energy Lab Co Ltd 表示装置、携帯情報端末、携帯電話
KR20220038784A (ko) * 2019-08-07 2022-03-29 어플라이드 머티어리얼스, 인코포레이티드 3d nand를 위한 수정된 스택들

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US6380558B1 (en) * 1998-12-29 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6858898B1 (en) * 1999-03-23 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
JP5046452B2 (ja) * 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6372561B1 (en) * 2001-06-01 2002-04-16 Advanced Micro Devices, Inc. Fabrication of fully depleted field effect transistor formed in SOI technology with a single implantation step
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP5057619B2 (ja) 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
KR100944886B1 (ko) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
US20040145381A1 (en) * 2001-12-28 2004-07-29 Jun Su Test fixture for die-level testing of planar lightwave circuits
JP3637332B2 (ja) * 2002-05-29 2005-04-13 株式会社東芝 半導体装置及びその製造方法
AU2003275614A1 (en) * 2002-10-30 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI330269B (en) * 2002-12-27 2010-09-11 Semiconductor Energy Lab Separating method
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
JP2004247077A (ja) * 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法
TWI254990B (en) * 2003-11-14 2006-05-11 Samsung Electronics Co Ltd Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
KR100546394B1 (ko) * 2003-11-14 2006-01-26 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
JP3946724B2 (ja) * 2004-01-29 2007-07-18 シャープ株式会社 半導体装置の製造方法
US20060113586A1 (en) * 2004-11-29 2006-06-01 Macronix International Co., Ltd. Charge trapping dielectric structure for non-volatile memory
KR100707176B1 (ko) * 2005-01-13 2007-04-13 삼성전자주식회사 단결정 실리콘으로 구성된 박막 트랜지스터의 채널 영역형성 방법
EP1691383A1 (en) * 2005-02-14 2006-08-16 TDK Corporation Capacitor, method of making the same, filter using the same, and dielectric thin film used for the same
JP5827578B2 (ja) 2011-02-14 2015-12-02 株式会社半導体エネルギー研究所 光学素子の作製方法
JP5766467B2 (ja) * 2011-03-02 2015-08-19 株式会社東芝 薄膜トランジスタ及びその製造方法、表示装置
KR20130017312A (ko) * 2011-08-10 2013-02-20 삼성디스플레이 주식회사 표시 장치
KR20200019269A (ko) * 2012-06-29 2020-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9219120B2 (en) 2013-10-15 2015-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor film with adhesion layer and method for forming the same
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
KR102223678B1 (ko) * 2014-07-25 2021-03-08 삼성디스플레이 주식회사 표시장치용 백플레인 및 그 제조 방법
WO2024081221A1 (en) * 2022-10-14 2024-04-18 Applied Materials, Inc. Particle reduction in physical vapor deposition of amorphous silicon
CN115745417B (zh) * 2022-11-08 2024-07-19 福建华佳彩有限公司 一种使用在铟镓锌氧化物上的氮氧化硅成膜方法

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US5470768A (en) * 1992-08-07 1995-11-28 Fujitsu Limited Method for fabricating a thin-film transistor
TW264575B (https=) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645377B2 (ja) 1996-10-24 2005-05-11 株式会社半導体エネルギー研究所 集積回路の作製方法
JP3597331B2 (ja) 1996-10-24 2004-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6087229A (en) * 1998-03-09 2000-07-11 Lsi Logic Corporation Composite semiconductor gate dielectrics
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
JP4493779B2 (ja) 2000-01-31 2010-06-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP5016767B2 (ja) * 2000-03-07 2012-09-05 エーエスエム インターナショナル エヌ．ヴェー． 傾斜薄膜の形成方法
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001217422A (ja) * 2000-01-31 2001-08-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2014059574A (ja) * 2002-05-13 2014-04-03 Semiconductor Energy Lab Co Ltd 表示装置、携帯情報端末、携帯電話
US9966390B2 (en) 2002-05-13 2018-05-08 Semicondutcor Energy Laboratory Co., LTD. Display device
US9508756B2 (en) 2002-05-13 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Display device
US9165991B2 (en) 2002-05-13 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US8927994B2 (en) 2002-05-13 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device
US7678627B2 (en) 2003-02-19 2010-03-16 Tpo Display Corp. Process for producing thin film transistor having LDD region
JP2007311542A (ja) * 2006-05-18 2007-11-29 Toshiba Matsushita Display Technology Co Ltd 薄膜トランジスタ
US7965017B2 (en) 2006-08-25 2011-06-21 Ube Industries, Ltd. Thin film piezoelectric resonator and method for manufacturing the same
JP4924993B2 (ja) * 2006-08-25 2012-04-25 宇部興産株式会社 薄膜圧電共振器とその製造方法
JPWO2008032543A1 (ja) * 2006-08-25 2010-01-21 宇部興産株式会社 薄膜圧電共振器とその製造方法
WO2008032543A1 (fr) * 2006-08-25 2008-03-20 Ube Industries, Ltd. Résonateur piézoélectrique à couche mince et son procédé de fabrication
JP2008160654A (ja) * 2006-12-26 2008-07-10 Ube Ind Ltd 集積化分波器
KR20220038784A (ko) * 2019-08-07 2022-03-29 어플라이드 머티어리얼스, 인코포레이티드 3d nand를 위한 수정된 스택들
KR102821904B1 (ko) * 2019-08-07 2025-06-17 어플라이드 머티어리얼스, 인코포레이티드 3d nand를 위한 수정된 스택들

Also Published As

Publication number Publication date
US6730992B2 (en) 2004-05-04
US6632708B2 (en) 2003-10-14
TW522439B (en) 2003-03-01
US20010004121A1 (en) 2001-06-21
US20030151119A1 (en) 2003-08-14

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