JP2001168231A5 - - Google Patents
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- Publication number
- JP2001168231A5 JP2001168231A5 JP1999352757A JP35275799A JP2001168231A5 JP 2001168231 A5 JP2001168231 A5 JP 2001168231A5 JP 1999352757 A JP1999352757 A JP 1999352757A JP 35275799 A JP35275799 A JP 35275799A JP 2001168231 A5 JP2001168231 A5 JP 2001168231A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- semiconductor device
- insulating layer
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 description 292
- 239000004065 semiconductor Substances 0.000 description 226
- 239000002184 metal Substances 0.000 description 83
- 229910052751 metal Inorganic materials 0.000 description 83
- 239000011347 resin Substances 0.000 description 68
- 229920005989 resin Polymers 0.000 description 68
- 235000012431 wafers Nutrition 0.000 description 54
- 239000010408 film Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 37
- 239000000463 material Substances 0.000 description 36
- 239000010409 thin film Substances 0.000 description 31
- 229910000679 solder Inorganic materials 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 22
- 238000007747 plating Methods 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000005498 polishing Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000010949 copper Substances 0.000 description 10
- 238000002161 passivation Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 229960003280 cupric chloride Drugs 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35275799A JP4376388B2 (ja) | 1999-12-13 | 1999-12-13 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35275799A JP4376388B2 (ja) | 1999-12-13 | 1999-12-13 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008270224A Division JP2009016882A (ja) | 2008-10-20 | 2008-10-20 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001168231A JP2001168231A (ja) | 2001-06-22 |
| JP2001168231A5 true JP2001168231A5 (enExample) | 2007-01-18 |
| JP4376388B2 JP4376388B2 (ja) | 2009-12-02 |
Family
ID=18426242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35275799A Expired - Lifetime JP4376388B2 (ja) | 1999-12-13 | 1999-12-13 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4376388B2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4754105B2 (ja) * | 2001-07-04 | 2011-08-24 | パナソニック株式会社 | 半導体装置およびその製造方法 |
| DE10137184B4 (de) * | 2001-07-31 | 2007-09-06 | Infineon Technologies Ag | Verfahren zur Herstellung eines elektronischen Bauteils mit einem Kuststoffgehäuse und elektronisches Bauteil |
| JP2003068736A (ja) * | 2001-08-24 | 2003-03-07 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| CN100461391C (zh) * | 2002-02-04 | 2009-02-11 | 卡西欧计算机株式会社 | 半导体装置 |
| TW577160B (en) | 2002-02-04 | 2004-02-21 | Casio Computer Co Ltd | Semiconductor device and manufacturing method thereof |
| EP1527480A2 (en) | 2002-08-09 | 2005-05-04 | Casio Computer Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7187060B2 (en) | 2003-03-13 | 2007-03-06 | Sanyo Electric Co., Ltd. | Semiconductor device with shield |
| JP4346333B2 (ja) * | 2003-03-26 | 2009-10-21 | 新光電気工業株式会社 | 半導体素子を内蔵した多層回路基板の製造方法 |
| JP3929966B2 (ja) | 2003-11-25 | 2007-06-13 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| JP2006032598A (ja) * | 2004-07-15 | 2006-02-02 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| WO2006008795A1 (ja) * | 2004-07-16 | 2006-01-26 | Shinko Electric Industries Co., Ltd. | 半導体装置の製造方法 |
| JP4607531B2 (ja) * | 2004-09-29 | 2011-01-05 | カシオマイクロニクス株式会社 | 半導体装置の製造方法 |
| KR100700395B1 (ko) * | 2005-04-25 | 2007-03-28 | 신꼬오덴기 고교 가부시키가이샤 | 반도체 장치의 제조 방법 |
| JP2006339189A (ja) * | 2005-05-31 | 2006-12-14 | Oki Electric Ind Co Ltd | 半導体ウェハおよびそれにより形成した半導体装置 |
| CN101847611B (zh) | 2005-06-29 | 2012-05-23 | 罗姆股份有限公司 | 半导体装置 |
| JP2007012756A (ja) * | 2005-06-29 | 2007-01-18 | Rohm Co Ltd | 半導体装置 |
| JP5266009B2 (ja) * | 2008-10-14 | 2013-08-21 | 株式会社フジクラ | 部品内蔵形回路配線基板 |
| JP5175803B2 (ja) | 2009-07-01 | 2013-04-03 | 新光電気工業株式会社 | 半導体装置の製造方法 |
-
1999
- 1999-12-13 JP JP35275799A patent/JP4376388B2/ja not_active Expired - Lifetime
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