JP2001158966A5 - - Google Patents

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Publication number
JP2001158966A5
JP2001158966A5 JP1999341962A JP34196299A JP2001158966A5 JP 2001158966 A5 JP2001158966 A5 JP 2001158966A5 JP 1999341962 A JP1999341962 A JP 1999341962A JP 34196299 A JP34196299 A JP 34196299A JP 2001158966 A5 JP2001158966 A5 JP 2001158966A5
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JP
Japan
Prior art keywords
pores
liquid
solvent
substrate
solvent vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999341962A
Other languages
English (en)
Japanese (ja)
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JP2001158966A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP34196299A priority Critical patent/JP2001158966A/ja
Priority claimed from JP34196299A external-priority patent/JP2001158966A/ja
Priority to TW089125438A priority patent/TW469492B/zh
Priority to US09/726,552 priority patent/US6517642B2/en
Priority to KR1020000072227A priority patent/KR20010062031A/ko
Priority to EP00126292A priority patent/EP1106712A1/en
Publication of JP2001158966A publication Critical patent/JP2001158966A/ja
Priority to US10/315,170 priority patent/US6780245B2/en
Publication of JP2001158966A5 publication Critical patent/JP2001158966A5/ja
Pending legal-status Critical Current

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JP34196299A 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法 Pending JP2001158966A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP34196299A JP2001158966A (ja) 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法
TW089125438A TW469492B (en) 1999-12-01 2000-11-30 Method and apparatus of producing thin film of metal or metal compound
US09/726,552 US6517642B2 (en) 1999-12-01 2000-12-01 Method and apparatus of producing thin film of metal or metal compound
KR1020000072227A KR20010062031A (ko) 1999-12-01 2000-12-01 금속 또는 금속화합물의 박막 제작방법 및 제작장치
EP00126292A EP1106712A1 (en) 1999-12-01 2000-12-01 Method and apparatus of producing thin film of metal or metal compound
US10/315,170 US6780245B2 (en) 1999-12-01 2002-12-10 Method and apparatus of producing thin film of metal or metal compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34196299A JP2001158966A (ja) 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法

Publications (2)

Publication Number Publication Date
JP2001158966A JP2001158966A (ja) 2001-06-12
JP2001158966A5 true JP2001158966A5 (enExample) 2005-04-07

Family

ID=18350121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34196299A Pending JP2001158966A (ja) 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法

Country Status (5)

Country Link
US (2) US6517642B2 (enExample)
EP (1) EP1106712A1 (enExample)
JP (1) JP2001158966A (enExample)
KR (1) KR20010062031A (enExample)
TW (1) TW469492B (enExample)

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JP4825373B2 (ja) * 2001-08-14 2011-11-30 ローム株式会社 強誘電体薄膜の製造方法およびこれを用いた強誘電体メモリの製造方法
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US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
JP2004298669A (ja) * 2003-03-28 2004-10-28 Seiko Epson Corp セラミックス材料の塗布方法およびセラミックス膜
US7255943B2 (en) * 2003-05-14 2007-08-14 Hoya Corporation Glass substrate for a magnetic disk, magnetic disk, and methods of producing the glass substrate and the magnetic disk
US7867565B2 (en) * 2003-06-30 2011-01-11 Imec Method for coating substrates
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US7521705B2 (en) 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
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US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7727901B2 (en) 2007-05-03 2010-06-01 Innovalight, Inc. Preparation of group IV semiconductor nanoparticle materials and dispersions thereof
WO2009129353A1 (en) * 2008-04-15 2009-10-22 Purdue Research Foundation Metallized silicon substrate for indium gallium nitride light-emitting diode
US8309185B2 (en) * 2010-05-04 2012-11-13 National Tsing Hua University Nanoparticle film and forming method and application thereof
US8552490B2 (en) * 2010-06-18 2013-10-08 United Microelectronics Corp. Nonvolatile memory device with a high-K charge storage layer having a U-shaped,cross-sectional structure
JP6255650B2 (ja) * 2013-05-13 2018-01-10 株式会社Screenホールディングス 基板処理装置
JP5760060B2 (ja) * 2013-09-27 2015-08-05 株式会社茨城技研 金属皮膜形成方法並びに金属皮膜形成製品の製造方法及び製造装置
US20150118487A1 (en) * 2013-10-25 2015-04-30 Colin A. Wolden Plasma-assisted nanofabrication of two-dimensional metal chalcogenide layers
KR101503735B1 (ko) 2014-01-20 2015-03-19 연세대학교 산학협력단 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물 합성 방법
CN104498944B (zh) * 2015-01-13 2017-10-17 南昌航空大学 一种利用纳米核壳粒子粉末激光熔覆制备表面陶瓷涂层方法
CN105506619A (zh) * 2015-12-31 2016-04-20 四川腾达电梯制造有限公司 一种电梯导轨表面处理工艺
JP7120757B2 (ja) * 2017-12-12 2022-08-17 株式会社Jcu 酸化物膜形成用塗布剤、酸化物膜の製造方法及び金属めっき構造体の製造方法
US12225641B2 (en) * 2019-12-20 2025-02-11 Applied Materials, Inc. Bake devices for handling and uniform baking of substrates
CN113957434B (zh) * 2021-10-22 2022-11-04 燕山大学 一种在低碳钢表面制备高硬度高耐磨熔覆层的方法

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