JP2001158966A - 金属ないし金属化合物薄膜の作製方法 - Google Patents
金属ないし金属化合物薄膜の作製方法Info
- Publication number
- JP2001158966A JP2001158966A JP34196299A JP34196299A JP2001158966A JP 2001158966 A JP2001158966 A JP 2001158966A JP 34196299 A JP34196299 A JP 34196299A JP 34196299 A JP34196299 A JP 34196299A JP 2001158966 A JP2001158966 A JP 2001158966A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- thin film
- substrate
- particle dispersion
- ultrafine particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 69
- 239000002184 metal Substances 0.000 title claims abstract description 68
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 150000002736 metal compounds Chemical class 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000002904 solvent Substances 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 150000002739 metals Chemical class 0.000 claims abstract description 3
- 239000011882 ultra-fine particle Substances 0.000 claims description 61
- 239000006185 dispersion Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052788 barium Inorganic materials 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 239000010419 fine particle Substances 0.000 abstract 5
- 239000002270 dispersing agent Substances 0.000 abstract 4
- 238000002203 pretreatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 239000007788 liquid Substances 0.000 description 19
- 239000011148 porous material Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 239000003595 mist Substances 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 229910004200 TaSiN Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910009580 YMnO Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 101000650817 Homo sapiens Semaphorin-4D Proteins 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 101100219325 Phaseolus vulgaris BA13 gene Proteins 0.000 description 1
- 102100027744 Semaphorin-4D Human genes 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 fatty acid salt Chemical class 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
- C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
- C23C24/087—Coating with metal alloys or metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
- C23C24/103—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
- C23C24/106—Coating with metal alloys or metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34196299A JP2001158966A (ja) | 1999-12-01 | 1999-12-01 | 金属ないし金属化合物薄膜の作製方法 |
| TW089125438A TW469492B (en) | 1999-12-01 | 2000-11-30 | Method and apparatus of producing thin film of metal or metal compound |
| KR1020000072227A KR20010062031A (ko) | 1999-12-01 | 2000-12-01 | 금속 또는 금속화합물의 박막 제작방법 및 제작장치 |
| EP00126292A EP1106712A1 (en) | 1999-12-01 | 2000-12-01 | Method and apparatus of producing thin film of metal or metal compound |
| US09/726,552 US6517642B2 (en) | 1999-12-01 | 2000-12-01 | Method and apparatus of producing thin film of metal or metal compound |
| US10/315,170 US6780245B2 (en) | 1999-12-01 | 2002-12-10 | Method and apparatus of producing thin film of metal or metal compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34196299A JP2001158966A (ja) | 1999-12-01 | 1999-12-01 | 金属ないし金属化合物薄膜の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001158966A true JP2001158966A (ja) | 2001-06-12 |
| JP2001158966A5 JP2001158966A5 (enExample) | 2005-04-07 |
Family
ID=18350121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34196299A Pending JP2001158966A (ja) | 1999-12-01 | 1999-12-01 | 金属ないし金属化合物薄膜の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6517642B2 (enExample) |
| EP (1) | EP1106712A1 (enExample) |
| JP (1) | JP2001158966A (enExample) |
| KR (1) | KR20010062031A (enExample) |
| TW (1) | TW469492B (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007129227A (ja) * | 2005-11-04 | 2007-05-24 | Seiko Epson Corp | 電子装置の製造方法、巻き取り製造工程、薄膜トランジスタ及び塗布装置 |
| KR101503735B1 (ko) | 2014-01-20 | 2015-03-19 | 연세대학교 산학협력단 | 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물 합성 방법 |
| CN113957434A (zh) * | 2021-10-22 | 2022-01-21 | 燕山大学 | 一种在低碳钢表面制备高硬度高耐磨熔覆层的方法 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6972256B2 (en) * | 1999-11-30 | 2005-12-06 | Ebara Corporation | Method and apparatus for forming thin film of metal |
| JP3479833B2 (ja) * | 2000-08-22 | 2003-12-15 | 日本電気株式会社 | レーザ修正方法および装置 |
| US7087100B2 (en) * | 2001-01-31 | 2006-08-08 | General Electric Company | Preparation of nanosized copper and copper compounds |
| US6855584B2 (en) * | 2001-03-29 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7253032B2 (en) * | 2001-04-20 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of flattening a crystallized semiconductor film surface by using a plate |
| JP4854866B2 (ja) * | 2001-04-27 | 2012-01-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2003007579A (ja) * | 2001-06-19 | 2003-01-10 | Matsushita Electric Ind Co Ltd | 有機薄膜形成方法 |
| JP4825373B2 (ja) * | 2001-08-14 | 2011-11-30 | ローム株式会社 | 強誘電体薄膜の製造方法およびこれを用いた強誘電体メモリの製造方法 |
| DE10225606A1 (de) * | 2002-06-07 | 2004-01-08 | Daimlerchrysler Ag | Halbleiterbauelement und Verfahren zur Herstellung |
| GB0225202D0 (en) | 2002-10-30 | 2002-12-11 | Hewlett Packard Co | Electronic components |
| US6897151B2 (en) * | 2002-11-08 | 2005-05-24 | Wayne State University | Methods of filling a feature on a substrate with copper nanocrystals |
| JP2004298669A (ja) * | 2003-03-28 | 2004-10-28 | Seiko Epson Corp | セラミックス材料の塗布方法およびセラミックス膜 |
| US7255943B2 (en) * | 2003-05-14 | 2007-08-14 | Hoya Corporation | Glass substrate for a magnetic disk, magnetic disk, and methods of producing the glass substrate and the magnetic disk |
| US7867565B2 (en) * | 2003-06-30 | 2011-01-11 | Imec | Method for coating substrates |
| WO2006071363A2 (en) * | 2004-11-08 | 2006-07-06 | Brewer Science Inc. | Device for coating the outer edge of a substrate during microelectronics manufacturing |
| US7521705B2 (en) * | 2005-08-15 | 2009-04-21 | Micron Technology, Inc. | Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
| US20070117287A1 (en) * | 2005-11-23 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
| US7727901B2 (en) | 2007-05-03 | 2010-06-01 | Innovalight, Inc. | Preparation of group IV semiconductor nanoparticle materials and dispersions thereof |
| US20100176369A2 (en) * | 2008-04-15 | 2010-07-15 | Mark Oliver | Metalized Silicon Substrate for Indium Gallium Nitride Light-Emitting Diodes |
| US8309185B2 (en) * | 2010-05-04 | 2012-11-13 | National Tsing Hua University | Nanoparticle film and forming method and application thereof |
| US8552490B2 (en) * | 2010-06-18 | 2013-10-08 | United Microelectronics Corp. | Nonvolatile memory device with a high-K charge storage layer having a U-shaped,cross-sectional structure |
| JP6255650B2 (ja) | 2013-05-13 | 2018-01-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP5760060B2 (ja) * | 2013-09-27 | 2015-08-05 | 株式会社茨城技研 | 金属皮膜形成方法並びに金属皮膜形成製品の製造方法及び製造装置 |
| US20150118487A1 (en) * | 2013-10-25 | 2015-04-30 | Colin A. Wolden | Plasma-assisted nanofabrication of two-dimensional metal chalcogenide layers |
| CN104498944B (zh) * | 2015-01-13 | 2017-10-17 | 南昌航空大学 | 一种利用纳米核壳粒子粉末激光熔覆制备表面陶瓷涂层方法 |
| CN105506619A (zh) * | 2015-12-31 | 2016-04-20 | 四川腾达电梯制造有限公司 | 一种电梯导轨表面处理工艺 |
| JP7120757B2 (ja) * | 2017-12-12 | 2022-08-17 | 株式会社Jcu | 酸化物膜形成用塗布剤、酸化物膜の製造方法及び金属めっき構造体の製造方法 |
| US12225641B2 (en) * | 2019-12-20 | 2025-02-11 | Applied Materials, Inc. | Bake devices for handling and uniform baking of substrates |
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| JP2967734B2 (ja) * | 1996-10-18 | 1999-10-25 | 日本電気株式会社 | 薄膜の形成方法 |
| JP3205793B2 (ja) | 1996-12-19 | 2001-09-04 | 株式会社巴製作所 | 超微粒子及びその製造方法 |
| JP3356968B2 (ja) * | 1997-07-08 | 2002-12-16 | 住友大阪セメント株式会社 | 透明導電膜とその製造方法および表示装置 |
| US6124215A (en) * | 1997-10-06 | 2000-09-26 | Chartered Semiconductor Manufacturing Ltd. | Apparatus and method for planarization of spin-on materials |
| US6168694B1 (en) * | 1999-02-04 | 2001-01-02 | Chemat Technology, Inc. | Methods for and products of processing nanostructure nitride, carbonitride and oxycarbonitride electrode power materials by utilizing sol gel technology for supercapacitor applications |
-
1999
- 1999-12-01 JP JP34196299A patent/JP2001158966A/ja active Pending
-
2000
- 2000-11-30 TW TW089125438A patent/TW469492B/zh active
- 2000-12-01 US US09/726,552 patent/US6517642B2/en not_active Expired - Fee Related
- 2000-12-01 KR KR1020000072227A patent/KR20010062031A/ko not_active Ceased
- 2000-12-01 EP EP00126292A patent/EP1106712A1/en not_active Withdrawn
-
2002
- 2002-12-10 US US10/315,170 patent/US6780245B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007129227A (ja) * | 2005-11-04 | 2007-05-24 | Seiko Epson Corp | 電子装置の製造方法、巻き取り製造工程、薄膜トランジスタ及び塗布装置 |
| KR101503735B1 (ko) | 2014-01-20 | 2015-03-19 | 연세대학교 산학협력단 | 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물 합성 방법 |
| CN113957434A (zh) * | 2021-10-22 | 2022-01-21 | 燕山大学 | 一种在低碳钢表面制备高硬度高耐磨熔覆层的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010062031A (ko) | 2001-07-07 |
| TW469492B (en) | 2001-12-21 |
| US20030098531A1 (en) | 2003-05-29 |
| US20010010837A1 (en) | 2001-08-02 |
| US6780245B2 (en) | 2004-08-24 |
| US6517642B2 (en) | 2003-02-11 |
| EP1106712A1 (en) | 2001-06-13 |
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