JP2001127265A - 半導体記憶装置およびその駆動方法 - Google Patents

半導体記憶装置およびその駆動方法

Info

Publication number
JP2001127265A
JP2001127265A JP30932999A JP30932999A JP2001127265A JP 2001127265 A JP2001127265 A JP 2001127265A JP 30932999 A JP30932999 A JP 30932999A JP 30932999 A JP30932999 A JP 30932999A JP 2001127265 A JP2001127265 A JP 2001127265A
Authority
JP
Japan
Prior art keywords
gate electrode
oxide film
ferroelectric
silicon substrate
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30932999A
Other languages
English (en)
Japanese (ja)
Inventor
Yasuhiro Shimada
恭博 嶋田
Koji Arita
浩二 有田
Kiyoshi Uchiyama
潔 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP30932999A priority Critical patent/JP2001127265A/ja
Priority to TW089122680A priority patent/TW483151B/zh
Priority to PCT/JP2000/007533 priority patent/WO2001033633A1/fr
Priority to EP00971698A priority patent/EP1154487A4/fr
Priority to US09/869,522 priority patent/US6396095B1/en
Publication of JP2001127265A publication Critical patent/JP2001127265A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
JP30932999A 1999-10-29 1999-10-29 半導体記憶装置およびその駆動方法 Pending JP2001127265A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP30932999A JP2001127265A (ja) 1999-10-29 1999-10-29 半導体記憶装置およびその駆動方法
TW089122680A TW483151B (en) 1999-10-29 2000-10-27 Semiconductor memory and its driving method
PCT/JP2000/007533 WO2001033633A1 (fr) 1999-10-29 2000-10-27 Memoire a semiconducteur et procede de commande de memoire a semiconducteur
EP00971698A EP1154487A4 (fr) 1999-10-29 2000-10-27 Memoire a semiconducteur et procede de commande de memoire a semiconducteur
US09/869,522 US6396095B1 (en) 1999-10-29 2000-10-27 Semiconductor memory and method of driving semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30932999A JP2001127265A (ja) 1999-10-29 1999-10-29 半導体記憶装置およびその駆動方法

Publications (1)

Publication Number Publication Date
JP2001127265A true JP2001127265A (ja) 2001-05-11

Family

ID=17991716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30932999A Pending JP2001127265A (ja) 1999-10-29 1999-10-29 半導体記憶装置およびその駆動方法

Country Status (5)

Country Link
US (1) US6396095B1 (fr)
EP (1) EP1154487A4 (fr)
JP (1) JP2001127265A (fr)
TW (1) TW483151B (fr)
WO (1) WO2001033633A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004519864A (ja) * 2000-08-24 2004-07-02 コバ・テクノロジーズ・インコーポレイテッド シングルトランジスタ希土類亜マンガン酸塩強誘電体不揮発性メモリセル
US20020164850A1 (en) 2001-03-02 2002-11-07 Gnadinger Alfred P. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6714435B1 (en) 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
TWI382530B (zh) * 2009-04-03 2013-01-11 Acer Inc A method and device for utilizing thin film transistor as nonvolatile memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2545989B1 (fr) * 1983-05-10 1985-07-05 Thomson Csf Transistor a effet de champ, fonctionnant en regime d'enrichissement
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
US5289030A (en) * 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US5654568A (en) 1992-01-17 1997-08-05 Rohm Co., Ltd. Semiconductor device including nonvolatile memories
JP3320474B2 (ja) * 1993-01-25 2002-09-03 沖電気工業株式会社 半導体記憶装置
JPH06275846A (ja) * 1993-03-24 1994-09-30 Rohm Co Ltd 不揮発性半導体記憶装置およびその製造方法
KR100311486B1 (ko) * 1995-11-23 2002-08-17 현대반도체 주식회사 반도체메모리장치및그의제조방법
JPH104148A (ja) * 1996-06-18 1998-01-06 Fujitsu Ltd 強誘電体メモリ
US5932904A (en) * 1997-03-07 1999-08-03 Sharp Laboratories Of America, Inc. Two transistor ferroelectric memory cell
JP4080050B2 (ja) * 1997-03-07 2008-04-23 シャープ株式会社 強誘電体メモリセル、半導体構造およびそれらの製造方法
US6303502B1 (en) * 2000-06-06 2001-10-16 Sharp Laboratories Of America, Inc. MOCVD metal oxide for one transistor memory

Also Published As

Publication number Publication date
TW483151B (en) 2002-04-11
WO2001033633A1 (fr) 2001-05-10
EP1154487A1 (fr) 2001-11-14
US6396095B1 (en) 2002-05-28
EP1154487A4 (fr) 2003-11-05

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