JP2001068652A5 - - Google Patents

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Publication number
JP2001068652A5
JP2001068652A5 JP1999244018A JP24401899A JP2001068652A5 JP 2001068652 A5 JP2001068652 A5 JP 2001068652A5 JP 1999244018 A JP1999244018 A JP 1999244018A JP 24401899 A JP24401899 A JP 24401899A JP 2001068652 A5 JP2001068652 A5 JP 2001068652A5
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JP
Japan
Prior art keywords
oxide film
forming
semiconductor substrate
formation region
active region
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Application number
JP1999244018A
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English (en)
Japanese (ja)
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JP2001068652A (ja
JP4270670B2 (ja
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Priority to JP24401899A priority Critical patent/JP4270670B2/ja
Priority claimed from JP24401899A external-priority patent/JP4270670B2/ja
Priority to US09/521,969 priority patent/US6281050B1/en
Publication of JP2001068652A publication Critical patent/JP2001068652A/ja
Publication of JP2001068652A5 publication Critical patent/JP2001068652A5/ja
Application granted granted Critical
Publication of JP4270670B2 publication Critical patent/JP4270670B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP24401899A 1999-03-15 1999-08-30 半導体装置及び不揮発性半導体記憶装置の製造方法 Expired - Fee Related JP4270670B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP24401899A JP4270670B2 (ja) 1999-08-30 1999-08-30 半導体装置及び不揮発性半導体記憶装置の製造方法
US09/521,969 US6281050B1 (en) 1999-03-15 2000-03-09 Manufacturing method of a semiconductor device and a nonvolatile semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24401899A JP4270670B2 (ja) 1999-08-30 1999-08-30 半導体装置及び不揮発性半導体記憶装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001068652A JP2001068652A (ja) 2001-03-16
JP2001068652A5 true JP2001068652A5 (zh) 2005-06-09
JP4270670B2 JP4270670B2 (ja) 2009-06-03

Family

ID=17112495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24401899A Expired - Fee Related JP4270670B2 (ja) 1999-03-15 1999-08-30 半導体装置及び不揮発性半導体記憶装置の製造方法

Country Status (1)

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JP (1) JP4270670B2 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100350055B1 (ko) * 1999-12-24 2002-08-24 삼성전자 주식회사 다중 게이트 절연막을 갖는 반도체소자 및 그 제조방법
KR20020091982A (ko) * 2001-06-01 2002-12-11 삼성전자 주식회사 얕은 트렌치 소자분리 구조를 가지는 비휘발성 메모리소자 및 그 제조방법
JP4859290B2 (ja) * 2001-06-21 2012-01-25 富士通セミコンダクター株式会社 半導体集積回路装置の製造方法
JP4672197B2 (ja) * 2001-07-04 2011-04-20 株式会社東芝 半導体記憶装置の製造方法
KR100426485B1 (ko) * 2001-12-22 2004-04-14 주식회사 하이닉스반도체 플래쉬 메모리 셀의 제조 방법
KR100466189B1 (ko) * 2002-06-04 2005-01-13 주식회사 하이닉스반도체 플래시 메모리 셀의 제조 방법
KR100466195B1 (ko) * 2002-07-18 2005-01-13 주식회사 하이닉스반도체 플래시 메모리 제조방법
JP2004095886A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置及びその製造方法
KR100481862B1 (ko) * 2002-09-19 2005-04-11 삼성전자주식회사 스플리트 게이트형 플래시 메모리 소자의 제조방법
KR100642901B1 (ko) * 2003-10-22 2006-11-03 매그나칩 반도체 유한회사 비휘발성 메모리 소자의 제조 방법
US7539963B2 (en) 2003-10-24 2009-05-26 Fujitsu Microelectronics Limited Semiconductor device group and method for fabricating the same, and semiconductor device and method for fabricating the same
JP4836416B2 (ja) * 2004-07-05 2011-12-14 富士通セミコンダクター株式会社 半導体装置の製造方法
US7205630B2 (en) * 2004-07-12 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a semiconductor device having low and high voltage transistors
JP2006156471A (ja) 2004-11-25 2006-06-15 Toshiba Corp 半導体装置および半導体装置の製造方法
US7202125B2 (en) * 2004-12-22 2007-04-10 Sandisk Corporation Low-voltage, multiple thin-gate oxide and low-resistance gate electrode
JP5239254B2 (ja) * 2007-08-22 2013-07-17 サンケン電気株式会社 絶縁ゲート型半導体素子の製造方法
JP2009188196A (ja) * 2008-02-06 2009-08-20 Elpida Memory Inc 半導体装置及びその製造方法
JP2014229665A (ja) * 2013-05-20 2014-12-08 富士通セミコンダクター株式会社 半導体装置の製造方法
US10083878B1 (en) * 2017-06-05 2018-09-25 Globalfoundries Inc. Fin fabrication process with dual shallow trench isolation and tunable inner and outer fin profile
JP2021048323A (ja) 2019-09-19 2021-03-25 キオクシア株式会社 半導体装置
CN116403970B (zh) * 2023-06-09 2023-08-25 合肥晶合集成电路股份有限公司 半导体器件及其制造方法

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