JP2001015849A5 - - Google Patents

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Publication number
JP2001015849A5
JP2001015849A5 JP1999186552A JP18655299A JP2001015849A5 JP 2001015849 A5 JP2001015849 A5 JP 2001015849A5 JP 1999186552 A JP1999186552 A JP 1999186552A JP 18655299 A JP18655299 A JP 18655299A JP 2001015849 A5 JP2001015849 A5 JP 2001015849A5
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JP
Japan
Prior art keywords
semiconductor
photodiode
conductivity type
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999186552A
Other languages
English (en)
Japanese (ja)
Other versions
JP3934828B2 (ja
JP2001015849A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18655299A priority Critical patent/JP3934828B2/ja
Priority claimed from JP18655299A external-priority patent/JP3934828B2/ja
Priority to US09/606,014 priority patent/US6449296B1/en
Publication of JP2001015849A publication Critical patent/JP2001015849A/ja
Publication of JP2001015849A5 publication Critical patent/JP2001015849A5/ja
Application granted granted Critical
Publication of JP3934828B2 publication Critical patent/JP3934828B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP18655299A 1999-06-30 1999-06-30 半導体レーザ装置 Expired - Fee Related JP3934828B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP18655299A JP3934828B2 (ja) 1999-06-30 1999-06-30 半導体レーザ装置
US09/606,014 US6449296B1 (en) 1999-06-30 2000-06-29 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18655299A JP3934828B2 (ja) 1999-06-30 1999-06-30 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2001015849A JP2001015849A (ja) 2001-01-19
JP2001015849A5 true JP2001015849A5 (enExample) 2005-03-03
JP3934828B2 JP3934828B2 (ja) 2007-06-20

Family

ID=16190523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18655299A Expired - Fee Related JP3934828B2 (ja) 1999-06-30 1999-06-30 半導体レーザ装置

Country Status (2)

Country Link
US (1) US6449296B1 (enExample)
JP (1) JP3934828B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2812769B1 (fr) * 2000-08-04 2003-08-29 Cit Alcatel Laser accordable en semi-conducteur a emission par la tranche
KR100456984B1 (ko) 2001-03-06 2004-11-10 가부시끼가이샤 도시바 반도체 레이저 장치
KR100412354B1 (ko) * 2001-05-30 2003-12-31 삼성전자주식회사 이온주입장치
US6907054B2 (en) * 2001-06-29 2005-06-14 Sharp Kabushiki Kaisha Semiconductor laser device
US6687272B2 (en) 2001-09-18 2004-02-03 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2003198032A (ja) * 2001-12-27 2003-07-11 Mitsubishi Electric Corp 光素子、光素子モジュール及び光素子用キャリア
JP2003233923A (ja) * 2002-02-08 2003-08-22 Sony Corp 光学ピックアップ及びディスクドライブ装置
US6973110B2 (en) * 2002-02-22 2005-12-06 Infineon Technologies Ag Monolithic laser configuration
US7180929B2 (en) * 2002-04-18 2007-02-20 Intel Corporation Wafer-level test structure for edge-emitting semiconductor lasers
DE10253907A1 (de) * 2002-09-20 2004-04-01 Osram Opto Semiconductors Gmbh Optischer Abtastkopf und Verfahren zur Herstellung desselben
JP4064218B2 (ja) * 2002-11-28 2008-03-19 三菱電機株式会社 半導体レーザ装置
DE10323857A1 (de) 2003-05-26 2005-01-27 Osram Opto Semiconductors Gmbh Gehäuse für ein Laserdiodenbauelement, Laserdiodenbauelement und Verfahren zum Herstellen eines Laserdiodenbauelements
WO2005048421A1 (ja) * 2003-11-14 2005-05-26 Sanyo Electric Co., Ltd 半導体レーザ装置
EP1544966B1 (en) 2003-12-16 2006-11-29 Matsushita Electric Industrial Co., Ltd. Optical semiconductor device and method for fabricating the same
US20050196112A1 (en) * 2004-03-08 2005-09-08 Toshio Takagi Transmitting optical subassembly capable of monitoring the front beam of the semiconductor laser diode
JP2006040933A (ja) * 2004-07-22 2006-02-09 Sharp Corp 半導体レーザ装置
US8154030B2 (en) * 2004-10-01 2012-04-10 Finisar Corporation Integrated diode in a silicon chip scale package
JP2007266314A (ja) * 2006-03-28 2007-10-11 Matsushita Electric Works Ltd 発光装置
JP5822688B2 (ja) * 2011-11-29 2015-11-24 京セラ株式会社 受発光素子
US9401582B2 (en) 2012-05-08 2016-07-26 M/A-Com Technology Solutions Holdings, Inc. Lasers with beam-shape modification
DE102019115597A1 (de) * 2019-06-07 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung und optoelektronisches Strahlumlenkelement für eine Halbleiterlaservorrichtung
CN114144950B (zh) * 2019-08-06 2024-07-16 三菱电机株式会社 半导体激光装置
JP7399180B2 (ja) * 2019-09-30 2023-12-15 京セラ株式会社 光素子搭載用パッケージ、電子装置及び電子モジュール
EP4080585A4 (en) * 2019-12-20 2024-01-17 Nichia Corporation Light-receiving element and light-emitting device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2892812B2 (ja) 1990-10-19 1999-05-17 松下電子工業株式会社 半導体レーザ装置
JP3032376B2 (ja) 1992-05-11 2000-04-17 松下電子工業株式会社 半導体レーザ装置
US5883913A (en) * 1993-12-27 1999-03-16 Sony Corporation Optical device
JPH0818152A (ja) * 1994-06-30 1996-01-19 Sony Corp 光半導体装置及びその製造方法

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