JP2000243085A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2000243085A
JP2000243085A JP11042666A JP4266699A JP2000243085A JP 2000243085 A JP2000243085 A JP 2000243085A JP 11042666 A JP11042666 A JP 11042666A JP 4266699 A JP4266699 A JP 4266699A JP 2000243085 A JP2000243085 A JP 2000243085A
Authority
JP
Japan
Prior art keywords
potential
line
power supply
sense amplifiers
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11042666A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000243085A5 (enExample
Inventor
Riichiro Takemura
理一郎 竹村
Kiyoo Ito
清男 伊藤
Tomonori Sekiguchi
知紀 関口
Takeshi Sakata
健 阪田
Katsutaka Kimura
勝高 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP11042666A priority Critical patent/JP2000243085A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to TW088121215A priority patent/TW462056B/zh
Priority to PCT/JP2000/000698 priority patent/WO2000051134A1/ja
Priority to KR1020017010552A priority patent/KR100717225B1/ko
Priority to EP00902864A priority patent/EP1164595A4/en
Priority to CNA2005100070965A priority patent/CN1652252A/zh
Priority to AU24592/00A priority patent/AU2459200A/en
Priority to CNB008041466A priority patent/CN1197089C/zh
Publication of JP2000243085A publication Critical patent/JP2000243085A/ja
Priority to US09/933,815 priority patent/US6477100B2/en
Priority to US10/251,772 priority patent/US6535415B2/en
Priority to US10/347,804 priority patent/US6717835B2/en
Priority to US10/692,811 priority patent/US6819613B2/en
Priority to US10/892,271 priority patent/US6944078B2/en
Priority to US11/206,016 priority patent/US7230867B2/en
Publication of JP2000243085A5 publication Critical patent/JP2000243085A5/ja
Priority to US11/797,984 priority patent/US7345938B2/en
Priority to US12/028,538 priority patent/US20100277996A1/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP11042666A 1999-02-22 1999-02-22 半導体装置 Pending JP2000243085A (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP11042666A JP2000243085A (ja) 1999-02-22 1999-02-22 半導体装置
TW088121215A TW462056B (en) 1999-02-22 1999-12-03 Semiconductor apparatus
PCT/JP2000/000698 WO2000051134A1 (en) 1999-02-22 2000-02-09 Semiconductor device
KR1020017010552A KR100717225B1 (ko) 1999-02-22 2000-02-09 반도체 장치
EP00902864A EP1164595A4 (en) 1999-02-22 2000-02-09 SEMICONDUCTOR DEVICE
CNA2005100070965A CN1652252A (zh) 1999-02-22 2000-02-09 半导体器件
AU24592/00A AU2459200A (en) 1999-02-22 2000-02-09 Semiconductor device
CNB008041466A CN1197089C (zh) 1999-02-22 2000-02-09 半导体器件
US09/933,815 US6477100B2 (en) 1999-02-22 2001-08-22 Semiconductor memory device with over-driving sense amplifier
US10/251,772 US6535415B2 (en) 1999-02-22 2002-09-23 Semiconductor device
US10/347,804 US6717835B2 (en) 1999-02-22 2003-01-22 Semiconductor device
US10/692,811 US6819613B2 (en) 1999-02-22 2003-10-27 Semiconductor device
US10/892,271 US6944078B2 (en) 1999-02-22 2004-07-16 Semiconductor device
US11/206,016 US7230867B2 (en) 1999-02-22 2005-08-18 Semiconductor device
US11/797,984 US7345938B2 (en) 1999-02-22 2007-05-09 Semiconductor device
US12/028,538 US20100277996A1 (en) 1999-02-22 2008-02-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11042666A JP2000243085A (ja) 1999-02-22 1999-02-22 半導体装置

Publications (2)

Publication Number Publication Date
JP2000243085A true JP2000243085A (ja) 2000-09-08
JP2000243085A5 JP2000243085A5 (enExample) 2006-04-06

Family

ID=12642354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11042666A Pending JP2000243085A (ja) 1999-02-22 1999-02-22 半導体装置

Country Status (8)

Country Link
US (1) US6477100B2 (enExample)
EP (1) EP1164595A4 (enExample)
JP (1) JP2000243085A (enExample)
KR (1) KR100717225B1 (enExample)
CN (2) CN1652252A (enExample)
AU (1) AU2459200A (enExample)
TW (1) TW462056B (enExample)
WO (1) WO2000051134A1 (enExample)

Cited By (27)

* Cited by examiner, † Cited by third party
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US6671217B2 (en) 2002-03-05 2003-12-30 Renesas Technology Corporation Semiconductor device using high-speed sense amplifier
US6798255B2 (en) 2001-05-24 2004-09-28 Hitachi, Ltd. Semiconductor integrated circuit device
JP2005101466A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体記憶装置
US6917552B2 (en) 2002-03-05 2005-07-12 Renesas Technology Corporation Semiconductor device using high-speed sense amplifier
JP2006287225A (ja) * 2005-03-31 2006-10-19 Hynix Semiconductor Inc 低電圧用の半導体メモリ装置
JP2007226954A (ja) * 2006-02-22 2007-09-06 Hynix Semiconductor Inc 半導体メモリ装置のセンス増幅回路およびその駆動方法
KR100834390B1 (ko) * 2005-09-29 2008-06-04 주식회사 하이닉스반도체 반도체 메모리 장치
US7414874B2 (en) 2005-11-01 2008-08-19 Elpida Memory, Inc. Semiconductor memory device
JP2009038306A (ja) * 2007-08-03 2009-02-19 Elpida Memory Inc 半導体記憶装置
US7505297B2 (en) 2005-09-29 2009-03-17 Hynix Semiconductor, Inc. Semiconductor memory device
WO2009096001A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
US8212298B2 (en) 2008-01-29 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device and methods of producing it
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
KR101245542B1 (ko) 2011-06-10 2013-03-20 실리콘알엔디(주) 트랙 앤드 홀드 회로 및 트랙 앤드 홀드 방법
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
JP5237974B2 (ja) * 2008-01-29 2013-07-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure

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US6618307B2 (en) * 2001-09-05 2003-09-09 Sun Microsystems, Inc. Dynamic DRAM sense amplifier
JP2003228981A (ja) * 2002-02-05 2003-08-15 Toshiba Corp 半導体記憶装置
US7327619B2 (en) 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7324393B2 (en) 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US7443757B2 (en) 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
EP1543529B1 (en) 2002-09-24 2009-11-04 SanDisk Corporation Non-volatile memory and its sensing method
US7046568B2 (en) 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6987693B2 (en) 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US6873559B2 (en) * 2003-01-13 2005-03-29 Micron Technology, Inc. Method and apparatus for enhanced sensing of low voltage memory
KR100546188B1 (ko) * 2003-05-24 2006-01-24 주식회사 하이닉스반도체 감지증폭수단을 포함하는 반도체 메모리 장치 및 그의감지증폭수단을 오버드라이브 하는 방법
US7030664B2 (en) * 2003-06-30 2006-04-18 Sun Microsystems, Inc. Half-rail differential driver circuit
JP2005085289A (ja) * 2003-09-04 2005-03-31 Elpida Memory Inc 半導体記憶装置
US7064980B2 (en) 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US6956770B2 (en) 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
KR100583959B1 (ko) * 2004-01-07 2006-05-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 데이터 라이트 및 리드방법
JP4317777B2 (ja) * 2004-03-10 2009-08-19 パナソニック株式会社 半導体集積回路
KR100604660B1 (ko) * 2004-04-30 2006-07-26 주식회사 하이닉스반도체 오버드라이버의 구동력을 조절하는 반도체 메모리 소자
US7079434B2 (en) * 2004-09-02 2006-07-18 Micron Technology, Inc. Noise suppression in memory device sensing
US7158421B2 (en) 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7463521B2 (en) 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
KR100586557B1 (ko) * 2005-04-01 2006-06-08 주식회사 하이닉스반도체 센스앰프 오버드라이빙 회로 및 반도체 장치
US7447078B2 (en) 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
KR100673903B1 (ko) * 2005-04-30 2007-01-25 주식회사 하이닉스반도체 비트라인 오버 드라이빙 스킴을 가진 반도체 메모리 소자 및 그의 비트라인 감지증폭기 구동방법
JP4433311B2 (ja) * 2005-09-12 2010-03-17 ソニー株式会社 半導体記憶装置、電子機器及びモード設定方法
TW200721163A (en) 2005-09-23 2007-06-01 Zmos Technology Inc Low power memory control circuits and methods
US7599243B2 (en) * 2005-09-28 2009-10-06 Hynix Semiconductor, Inc. Sense amplifier over driver control circuit and method for controlling sense amplifier of semiconductor device
TWI301699B (en) * 2005-10-18 2008-10-01 Sunplus Technology Co Ltd Transmitting circuit, receiving circuit, interface switching module and interface switching method for sata and sas interface
KR100668497B1 (ko) * 2005-11-09 2007-01-12 주식회사 하이닉스반도체 비트라인 센스앰프 드라이버를 구비한 반도체 메모리 장치
KR100886628B1 (ko) * 2006-05-10 2009-03-04 주식회사 하이닉스반도체 반도체 장치의 내부전압 생성회로
JP2008010040A (ja) * 2006-06-27 2008-01-17 Elpida Memory Inc 半導体記憶装置
KR100911187B1 (ko) * 2007-03-13 2009-08-06 주식회사 하이닉스반도체 래치 구조 및 그것을 포함하는 비트라인 센스앰프 구조
JP5486172B2 (ja) * 2008-08-07 2014-05-07 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR20100034989A (ko) * 2008-09-25 2010-04-02 삼성전자주식회사 비대칭 구조의 센스 앰프를 구비하는 반도체 장치
CN109817263B (zh) * 2018-12-27 2024-04-02 西安紫光国芯半导体有限公司 改善dram中灵敏放大器读稳定性的读辅助电路、方法以及灵敏放大器
CN113113064B (zh) * 2021-05-12 2024-05-24 上海交通大学 Sram存储单元电路
KR102324983B1 (ko) 2021-07-30 2021-11-11 (주)푸드포트 쿨링이 가능한 모듈형 태양광 발전장치

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Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798255B2 (en) 2001-05-24 2004-09-28 Hitachi, Ltd. Semiconductor integrated circuit device
US6917552B2 (en) 2002-03-05 2005-07-12 Renesas Technology Corporation Semiconductor device using high-speed sense amplifier
US7196953B2 (en) 2002-03-05 2007-03-27 Hitachi, Ltd. Semiconductor device using high-speed sense amplifier
US6671217B2 (en) 2002-03-05 2003-12-30 Renesas Technology Corporation Semiconductor device using high-speed sense amplifier
JP2005101466A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体記憶装置
JP2006287225A (ja) * 2005-03-31 2006-10-19 Hynix Semiconductor Inc 低電圧用の半導体メモリ装置
USRE45036E1 (en) 2005-03-31 2014-07-22 Conversant Ip N.B. 868 Inc. Semiconductor memory device
US7505297B2 (en) 2005-09-29 2009-03-17 Hynix Semiconductor, Inc. Semiconductor memory device
KR100834390B1 (ko) * 2005-09-29 2008-06-04 주식회사 하이닉스반도체 반도체 메모리 장치
US7414874B2 (en) 2005-11-01 2008-08-19 Elpida Memory, Inc. Semiconductor memory device
JP2007226954A (ja) * 2006-02-22 2007-09-06 Hynix Semiconductor Inc 半導体メモリ装置のセンス増幅回路およびその駆動方法
JP2009038306A (ja) * 2007-08-03 2009-02-19 Elpida Memory Inc 半導体記憶装置
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
JP5237974B2 (ja) * 2008-01-29 2013-07-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
WO2009096468A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
US8212298B2 (en) 2008-01-29 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device and methods of producing it
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
WO2009096001A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8647947B2 (en) 2009-04-28 2014-02-11 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
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US20020000624A1 (en) 2002-01-03
EP1164595A1 (en) 2001-12-19
AU2459200A (en) 2000-09-14
CN1197089C (zh) 2005-04-13
WO2000051134A1 (en) 2000-08-31
KR100717225B1 (ko) 2007-05-11
TW462056B (en) 2001-11-01
KR20010113699A (ko) 2001-12-28
EP1164595A4 (en) 2006-05-10
CN1652252A (zh) 2005-08-10
CN1341262A (zh) 2002-03-20
US6477100B2 (en) 2002-11-05

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