AU2459200A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
AU2459200A
AU2459200A AU24592/00A AU2459200A AU2459200A AU 2459200 A AU2459200 A AU 2459200A AU 24592/00 A AU24592/00 A AU 24592/00A AU 2459200 A AU2459200 A AU 2459200A AU 2459200 A AU2459200 A AU 2459200A
Authority
AU
Australia
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU24592/00A
Other languages
English (en)
Inventor
Kiyoo Itoh
Katsutaka Kimura
Takeshi Sakata
Tomonori Sekiguchi
Riichiro Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of AU2459200A publication Critical patent/AU2459200A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
AU24592/00A 1999-02-22 2000-02-09 Semiconductor device Abandoned AU2459200A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11/42666 1999-02-22
JP11042666A JP2000243085A (ja) 1999-02-22 1999-02-22 半導体装置
PCT/JP2000/000698 WO2000051134A1 (en) 1999-02-22 2000-02-09 Semiconductor device

Publications (1)

Publication Number Publication Date
AU2459200A true AU2459200A (en) 2000-09-14

Family

ID=12642354

Family Applications (1)

Application Number Title Priority Date Filing Date
AU24592/00A Abandoned AU2459200A (en) 1999-02-22 2000-02-09 Semiconductor device

Country Status (8)

Country Link
US (1) US6477100B2 (enExample)
EP (1) EP1164595A4 (enExample)
JP (1) JP2000243085A (enExample)
KR (1) KR100717225B1 (enExample)
CN (2) CN1652252A (enExample)
AU (1) AU2459200A (enExample)
TW (1) TW462056B (enExample)
WO (1) WO2000051134A1 (enExample)

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US6618307B2 (en) * 2001-09-05 2003-09-09 Sun Microsystems, Inc. Dynamic DRAM sense amplifier
JP2003228981A (ja) * 2002-02-05 2003-08-15 Toshiba Corp 半導体記憶装置
US6917552B2 (en) 2002-03-05 2005-07-12 Renesas Technology Corporation Semiconductor device using high-speed sense amplifier
JP4031651B2 (ja) 2002-03-05 2008-01-09 株式会社日立製作所 半導体装置
US7327619B2 (en) 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7324393B2 (en) 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US7443757B2 (en) 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
EP1543529B1 (en) 2002-09-24 2009-11-04 SanDisk Corporation Non-volatile memory and its sensing method
US7046568B2 (en) 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6987693B2 (en) 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US6873559B2 (en) * 2003-01-13 2005-03-29 Micron Technology, Inc. Method and apparatus for enhanced sensing of low voltage memory
KR100546188B1 (ko) * 2003-05-24 2006-01-24 주식회사 하이닉스반도체 감지증폭수단을 포함하는 반도체 메모리 장치 및 그의감지증폭수단을 오버드라이브 하는 방법
US7030664B2 (en) * 2003-06-30 2006-04-18 Sun Microsystems, Inc. Half-rail differential driver circuit
JP2005085289A (ja) * 2003-09-04 2005-03-31 Elpida Memory Inc 半導体記憶装置
US7064980B2 (en) 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US6956770B2 (en) 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
JP2005101466A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体記憶装置
KR100583959B1 (ko) * 2004-01-07 2006-05-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 데이터 라이트 및 리드방법
JP4317777B2 (ja) * 2004-03-10 2009-08-19 パナソニック株式会社 半導体集積回路
KR100604660B1 (ko) * 2004-04-30 2006-07-26 주식회사 하이닉스반도체 오버드라이버의 구동력을 조절하는 반도체 메모리 소자
US7079434B2 (en) * 2004-09-02 2006-07-18 Micron Technology, Inc. Noise suppression in memory device sensing
US7158421B2 (en) 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
KR100571650B1 (ko) * 2005-03-31 2006-04-17 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7463521B2 (en) 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
KR100586557B1 (ko) * 2005-04-01 2006-06-08 주식회사 하이닉스반도체 센스앰프 오버드라이빙 회로 및 반도체 장치
US7447078B2 (en) 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
KR100673903B1 (ko) * 2005-04-30 2007-01-25 주식회사 하이닉스반도체 비트라인 오버 드라이빙 스킴을 가진 반도체 메모리 소자 및 그의 비트라인 감지증폭기 구동방법
JP4433311B2 (ja) * 2005-09-12 2010-03-17 ソニー株式会社 半導体記憶装置、電子機器及びモード設定方法
TW200721163A (en) 2005-09-23 2007-06-01 Zmos Technology Inc Low power memory control circuits and methods
US7599243B2 (en) * 2005-09-28 2009-10-06 Hynix Semiconductor, Inc. Sense amplifier over driver control circuit and method for controlling sense amplifier of semiconductor device
US7505297B2 (en) 2005-09-29 2009-03-17 Hynix Semiconductor, Inc. Semiconductor memory device
KR100834390B1 (ko) * 2005-09-29 2008-06-04 주식회사 하이닉스반도체 반도체 메모리 장치
TWI301699B (en) * 2005-10-18 2008-10-01 Sunplus Technology Co Ltd Transmitting circuit, receiving circuit, interface switching module and interface switching method for sata and sas interface
JP4874627B2 (ja) 2005-11-01 2012-02-15 エルピーダメモリ株式会社 半導体記憶装置
KR100668497B1 (ko) * 2005-11-09 2007-01-12 주식회사 하이닉스반도체 비트라인 센스앰프 드라이버를 구비한 반도체 메모리 장치
KR100902127B1 (ko) * 2006-02-22 2009-06-09 주식회사 하이닉스반도체 반도체 메모리 장치의 센스 증폭 회로 및 그의 구동 방법
KR100886628B1 (ko) * 2006-05-10 2009-03-04 주식회사 하이닉스반도체 반도체 장치의 내부전압 생성회로
JP2008010040A (ja) * 2006-06-27 2008-01-17 Elpida Memory Inc 半導体記憶装置
KR100911187B1 (ko) * 2007-03-13 2009-08-06 주식회사 하이닉스반도체 래치 구조 및 그것을 포함하는 비트라인 센스앰프 구조
JP2009038306A (ja) * 2007-08-03 2009-02-19 Elpida Memory Inc 半導体記憶装置
US8183628B2 (en) 2007-10-29 2012-05-22 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8212298B2 (en) 2008-01-29 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device and methods of producing it
JP5317343B2 (ja) 2009-04-28 2013-10-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5237974B2 (ja) * 2008-01-29 2013-07-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
WO2009096001A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
JP5486172B2 (ja) * 2008-08-07 2014-05-07 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR20100034989A (ko) * 2008-09-25 2010-04-02 삼성전자주식회사 비대칭 구조의 센스 앰프를 구비하는 반도체 장치
JP5356970B2 (ja) 2009-10-01 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
KR101211442B1 (ko) 2010-03-08 2012-12-12 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 고체 촬상 장치
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
JP5066590B2 (ja) 2010-06-09 2012-11-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法
JP5087655B2 (ja) 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
KR101245542B1 (ko) 2011-06-10 2013-03-20 실리콘알엔디(주) 트랙 앤드 홀드 회로 및 트랙 앤드 홀드 방법
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
CN109817263B (zh) * 2018-12-27 2024-04-02 西安紫光国芯半导体有限公司 改善dram中灵敏放大器读稳定性的读辅助电路、方法以及灵敏放大器
CN113113064B (zh) * 2021-05-12 2024-05-24 上海交通大学 Sram存储单元电路
KR102324983B1 (ko) 2021-07-30 2021-11-11 (주)푸드포트 쿨링이 가능한 모듈형 태양광 발전장치

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Also Published As

Publication number Publication date
US20020000624A1 (en) 2002-01-03
EP1164595A1 (en) 2001-12-19
JP2000243085A (ja) 2000-09-08
CN1197089C (zh) 2005-04-13
WO2000051134A1 (en) 2000-08-31
KR100717225B1 (ko) 2007-05-11
TW462056B (en) 2001-11-01
KR20010113699A (ko) 2001-12-28
EP1164595A4 (en) 2006-05-10
CN1652252A (zh) 2005-08-10
CN1341262A (zh) 2002-03-20
US6477100B2 (en) 2002-11-05

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase