JP2000150810A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2000150810A
JP2000150810A JP10326535A JP32653598A JP2000150810A JP 2000150810 A JP2000150810 A JP 2000150810A JP 10326535 A JP10326535 A JP 10326535A JP 32653598 A JP32653598 A JP 32653598A JP 2000150810 A JP2000150810 A JP 2000150810A
Authority
JP
Japan
Prior art keywords
capacitor
insulating film
interlayer insulating
wiring layer
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10326535A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000150810A5 (enExample
Inventor
Sumihito Otsuki
槻 純 人 大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP10326535A priority Critical patent/JP2000150810A/ja
Priority to US09/441,823 priority patent/US6399974B1/en
Publication of JP2000150810A publication Critical patent/JP2000150810A/ja
Priority to US10/106,526 priority patent/US20020098644A1/en
Publication of JP2000150810A5 publication Critical patent/JP2000150810A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP10326535A 1998-11-17 1998-11-17 半導体装置及びその製造方法 Pending JP2000150810A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10326535A JP2000150810A (ja) 1998-11-17 1998-11-17 半導体装置及びその製造方法
US09/441,823 US6399974B1 (en) 1998-11-17 1999-11-17 Semiconductor memory device using an insulator film for the capacitor of the memory cell and method for manufacturing the same
US10/106,526 US20020098644A1 (en) 1998-11-17 2002-03-22 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10326535A JP2000150810A (ja) 1998-11-17 1998-11-17 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2000150810A true JP2000150810A (ja) 2000-05-30
JP2000150810A5 JP2000150810A5 (enExample) 2005-07-14

Family

ID=18188926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10326535A Pending JP2000150810A (ja) 1998-11-17 1998-11-17 半導体装置及びその製造方法

Country Status (2)

Country Link
US (2) US6399974B1 (enExample)
JP (1) JP2000150810A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1189263A3 (en) * 2000-09-14 2005-04-27 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
US7151036B1 (en) 2002-07-29 2006-12-19 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate
US7598556B2 (en) 2004-03-18 2009-10-06 Panasonic Corporation Ferroelectric memory device
US7622307B2 (en) 2004-07-19 2009-11-24 Samsung Electronics Co., Ltd. Semiconductor devices having a planarized insulating layer and methods of forming the same
JP2016001699A (ja) * 2014-06-12 2016-01-07 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6504202B1 (en) * 2000-02-02 2003-01-07 Lsi Logic Corporation Interconnect-embedded metal-insulator-metal capacitor
US6504203B2 (en) * 2001-02-16 2003-01-07 International Business Machines Corporation Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed
EP1280198A2 (en) * 2001-07-18 2003-01-29 Matsushita Electric Industrial Co., Ltd. Semiconductor memory and method for fabricating the same
US6858890B2 (en) * 2002-06-04 2005-02-22 Infineon Technologies Aktiengesellschaft Ferroelectric memory integrated circuit with improved reliability
US20030228734A1 (en) * 2002-06-10 2003-12-11 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor device
JP2004146748A (ja) * 2002-10-28 2004-05-20 Alps Electric Co Ltd 薄膜キャパシタ素子
JP2004165559A (ja) * 2002-11-15 2004-06-10 Toshiba Corp 半導体装置
US7022246B2 (en) * 2003-01-06 2006-04-04 International Business Machines Corporation Method of fabrication of MIMCAP and resistor at same level
US20050070030A1 (en) * 2003-09-26 2005-03-31 Stefan Gernhardt Device and method for forming a contact to a top electrode in ferroelectric capacitor devices
US7291897B2 (en) * 2003-10-30 2007-11-06 Texas Instruments Incorporated One mask high density capacitor for integrated circuits
US7205634B2 (en) * 2004-03-10 2007-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. MIM structure and fabrication process with improved capacitance reliability
JP2006019692A (ja) * 2004-06-03 2006-01-19 Toshiba Corp 半導体装置
US7118925B2 (en) * 2004-12-10 2006-10-10 Texas Instruments Incorporated Fabrication of a ferromagnetic inductor core and capacitor electrode in a single photo mask step
US20060134862A1 (en) * 2004-12-17 2006-06-22 Patrice Parris CMOS NVM bitcell and integrated circuit
US7485968B2 (en) * 2005-08-11 2009-02-03 Ziptronix, Inc. 3D IC method and device
JP2009135217A (ja) * 2007-11-29 2009-06-18 Nec Electronics Corp 半導体装置の製造方法および半導体装置
US9953941B2 (en) 2015-08-25 2018-04-24 Invensas Bonding Technologies, Inc. Conductive barrier direct hybrid bonding

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3319869B2 (ja) * 1993-06-24 2002-09-03 三菱電機株式会社 半導体記憶装置およびその製造方法
US5438023A (en) * 1994-03-11 1995-08-01 Ramtron International Corporation Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like
JP2982855B2 (ja) * 1994-09-20 1999-11-29 日本電気株式会社 半導体装置とその製造方法
US6014049A (en) * 1995-04-28 2000-01-11 Delco Electronics Corp. Reduced RFI power pulse modulator
US6004839A (en) * 1996-01-17 1999-12-21 Nec Corporation Semiconductor device with conductive plugs
US5716875A (en) * 1996-03-01 1998-02-10 Motorola, Inc. Method for making a ferroelectric device
US5858832A (en) * 1996-03-11 1999-01-12 Chartered Semiconduction Manufacturing Ltd. Method for forming a high areal capacitance planar capacitor
JPH1056145A (ja) * 1996-08-07 1998-02-24 Hitachi Ltd 半導体集積回路装置の製造方法
JPH10178155A (ja) * 1996-10-18 1998-06-30 Sony Corp 半導体メモリセル及びその作製方法、並びに周辺回路用トランジスタ素子及びその作製方法
JPH1117124A (ja) 1997-06-24 1999-01-22 Toshiba Corp 半導体装置およびその製造方法
US5935766A (en) * 1997-08-07 1999-08-10 Advanced Micro Devices, Inc. Method of forming a conductive plug in an interlevel dielectric
US6114249A (en) * 1998-03-10 2000-09-05 International Business Machines Corporation Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1189263A3 (en) * 2000-09-14 2005-04-27 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
US8324711B2 (en) 2000-09-14 2012-12-04 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
US9136060B2 (en) 2000-09-14 2015-09-15 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate
US7151036B1 (en) 2002-07-29 2006-12-19 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate
US7598556B2 (en) 2004-03-18 2009-10-06 Panasonic Corporation Ferroelectric memory device
US7622307B2 (en) 2004-07-19 2009-11-24 Samsung Electronics Co., Ltd. Semiconductor devices having a planarized insulating layer and methods of forming the same
US7910912B2 (en) 2004-07-19 2011-03-22 Samsung Electronics Co., Ltd. Semiconductor devices having a planarized insulating layer
JP2016001699A (ja) * 2014-06-12 2016-01-07 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
US20020098644A1 (en) 2002-07-25
US6399974B1 (en) 2002-06-04

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