JP2000133883A - 窒化物半導体素子 - Google Patents

窒化物半導体素子

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Publication number
JP2000133883A
JP2000133883A JP30061598A JP30061598A JP2000133883A JP 2000133883 A JP2000133883 A JP 2000133883A JP 30061598 A JP30061598 A JP 30061598A JP 30061598 A JP30061598 A JP 30061598A JP 2000133883 A JP2000133883 A JP 2000133883A
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
barrier layer
undoped
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30061598A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000133883A5 (enrdf_load_stackoverflow
Inventor
Takashi Mukai
孝志 向井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP30061598A priority Critical patent/JP2000133883A/ja
Publication of JP2000133883A publication Critical patent/JP2000133883A/ja
Publication of JP2000133883A5 publication Critical patent/JP2000133883A5/ja
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP30061598A 1998-10-22 1998-10-22 窒化物半導体素子 Pending JP2000133883A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30061598A JP2000133883A (ja) 1998-10-22 1998-10-22 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30061598A JP2000133883A (ja) 1998-10-22 1998-10-22 窒化物半導体素子

Publications (2)

Publication Number Publication Date
JP2000133883A true JP2000133883A (ja) 2000-05-12
JP2000133883A5 JP2000133883A5 (enrdf_load_stackoverflow) 2005-12-08

Family

ID=17886998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30061598A Pending JP2000133883A (ja) 1998-10-22 1998-10-22 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP2000133883A (enrdf_load_stackoverflow)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065526A1 (fr) * 2002-01-31 2003-08-07 Nec Corporation Structure de puits quantique, element semiconducteur dans lequel elle est utilisee, et procede de production de l'element semiconducteur
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP2007134507A (ja) * 2005-11-10 2007-05-31 Sumitomo Electric Ind Ltd 半導体発光素子、および半導体発光素子を作製する方法
WO2009008202A1 (ja) * 2007-07-11 2009-01-15 Sumitomo Electric Industries, Ltd. 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
JP2009278088A (ja) * 2008-05-15 2009-11-26 Palo Alto Research Center Inc 変調ドープ活性層を備えた発光デバイス
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US7781777B2 (en) 2004-03-08 2010-08-24 Showa Denko K.K. Pn junction type group III nitride semiconductor light-emitting device
US20110121265A1 (en) * 2009-07-15 2011-05-26 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor optical device
JP2011159771A (ja) * 2010-01-29 2011-08-18 Nec Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置
US8344398B2 (en) 2007-01-19 2013-01-01 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
JP2013115372A (ja) * 2011-11-30 2013-06-10 Sharp Corp 半導体発光素子およびその製造方法、半導体発光素子の製造システム
US8507924B2 (en) 2004-07-02 2013-08-13 Cree, Inc. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8679876B2 (en) 2006-11-15 2014-03-25 Cree, Inc. Laser diode and method for fabricating same
US8772757B2 (en) 2005-05-27 2014-07-08 Cree, Inc. Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US9417468B2 (en) 2014-07-18 2016-08-16 Samsung Electronics Co., Ltd. Transmission type high-absorption optical modulator and method of manufacturing the same
CN114038955A (zh) * 2021-02-25 2022-02-11 重庆康佳光电技术研究院有限公司 发光芯片的外延结构、发光芯片及显示背板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997921A (ja) * 1995-07-21 1997-04-08 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH09116130A (ja) * 1995-02-03 1997-05-02 Sumitomo Chem Co Ltd ３−５族化合物半導体とその製造方法および発光素子
JPH09129920A (ja) * 1995-10-27 1997-05-16 Sumitomo Chem Co Ltd 発光素子用３−５族化合物半導体及び発光素子
JPH10126006A (ja) * 1995-11-06 1998-05-15 Nichia Chem Ind Ltd 窒化物半導体デバイス
JPH10200215A (ja) * 1997-01-08 1998-07-31 Mitsubishi Cable Ind Ltd 半導体発光素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116130A (ja) * 1995-02-03 1997-05-02 Sumitomo Chem Co Ltd ３−５族化合物半導体とその製造方法および発光素子
JPH0997921A (ja) * 1995-07-21 1997-04-08 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH09129920A (ja) * 1995-10-27 1997-05-16 Sumitomo Chem Co Ltd 発光素子用３−５族化合物半導体及び発光素子
JPH10126006A (ja) * 1995-11-06 1998-05-15 Nichia Chem Ind Ltd 窒化物半導体デバイス
JPH10200215A (ja) * 1997-01-08 1998-07-31 Mitsubishi Cable Ind Ltd 半導体発光素子及びその製造方法

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8044384B2 (en) 2001-05-30 2011-10-25 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US9112083B2 (en) 2001-05-30 2015-08-18 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7312474B2 (en) 2001-05-30 2007-12-25 Cree, Inc. Group III nitride based superlattice structures
US9054253B2 (en) 2001-05-30 2015-06-09 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US8546787B2 (en) 2001-05-30 2013-10-01 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US8227268B2 (en) 2001-05-30 2012-07-24 Cree, Inc. Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7183584B2 (en) 2002-01-31 2007-02-27 Nec Corporation Quantum well structure and semiconductor device using it and production method of semiconductor element
WO2003065526A1 (fr) * 2002-01-31 2003-08-07 Nec Corporation Structure de puits quantique, element semiconducteur dans lequel elle est utilisee, et procede de production de l'element semiconducteur
US7781777B2 (en) 2004-03-08 2010-08-24 Showa Denko K.K. Pn junction type group III nitride semiconductor light-emitting device
US8507924B2 (en) 2004-07-02 2013-08-13 Cree, Inc. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming
US8772757B2 (en) 2005-05-27 2014-07-08 Cree, Inc. Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
JP2007134507A (ja) * 2005-11-10 2007-05-31 Sumitomo Electric Ind Ltd 半導体発光素子、および半導体発光素子を作製する方法
US7547910B2 (en) 2005-11-10 2009-06-16 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device
US8679876B2 (en) 2006-11-15 2014-03-25 Cree, Inc. Laser diode and method for fabricating same
US8344398B2 (en) 2007-01-19 2013-01-01 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US9041139B2 (en) 2007-01-19 2015-05-26 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US7973322B2 (en) 2007-07-11 2011-07-05 Sumitomo Electric Industries, Ltd. Nitride semiconductor light emitting device and method for forming the same
WO2009008202A1 (ja) * 2007-07-11 2009-01-15 Sumitomo Electric Industries, Ltd. 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
JP2009278088A (ja) * 2008-05-15 2009-11-26 Palo Alto Research Center Inc 変調ドープ活性層を備えた発光デバイス
US8927962B2 (en) * 2009-07-15 2015-01-06 Sumitomo Electric Industries, Ltd. Group III nitride semiconductor optical device
US20110121265A1 (en) * 2009-07-15 2011-05-26 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor optical device
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
JP2011159771A (ja) * 2010-01-29 2011-08-18 Nec Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
JP2013115372A (ja) * 2011-11-30 2013-06-10 Sharp Corp 半導体発光素子およびその製造方法、半導体発光素子の製造システム
US9417468B2 (en) 2014-07-18 2016-08-16 Samsung Electronics Co., Ltd. Transmission type high-absorption optical modulator and method of manufacturing the same
CN114038955A (zh) * 2021-02-25 2022-02-11 重庆康佳光电技术研究院有限公司 发光芯片的外延结构、发光芯片及显示背板

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