JP2000133883A5 - - Google Patents
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- Publication number
- JP2000133883A5 JP2000133883A5 JP1998300615A JP30061598A JP2000133883A5 JP 2000133883 A5 JP2000133883 A5 JP 2000133883A5 JP 1998300615 A JP1998300615 A JP 1998300615A JP 30061598 A JP30061598 A JP 30061598A JP 2000133883 A5 JP2000133883 A5 JP 2000133883A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- layer
- semiconductor device
- undoped
- angstroms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 34
- 230000004888 barrier function Effects 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30061598A JP2000133883A (ja) | 1998-10-22 | 1998-10-22 | 窒化物半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30061598A JP2000133883A (ja) | 1998-10-22 | 1998-10-22 | 窒化物半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000133883A JP2000133883A (ja) | 2000-05-12 |
| JP2000133883A5 true JP2000133883A5 (enrdf_load_stackoverflow) | 2005-12-08 |
Family
ID=17886998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30061598A Pending JP2000133883A (ja) | 1998-10-22 | 1998-10-22 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000133883A (enrdf_load_stackoverflow) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7692182B2 (en) | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
| US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
| JP2003229645A (ja) | 2002-01-31 | 2003-08-15 | Nec Corp | 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法 |
| US7781777B2 (en) | 2004-03-08 | 2010-08-24 | Showa Denko K.K. | Pn junction type group III nitride semiconductor light-emitting device |
| US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| US20060267043A1 (en) | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
| JP5048236B2 (ja) * | 2005-11-10 | 2012-10-17 | 住友電気工業株式会社 | 半導体発光素子、および半導体発光素子を作製する方法 |
| US7769066B2 (en) | 2006-11-15 | 2010-08-03 | Cree, Inc. | Laser diode and method for fabricating same |
| US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
| JP2009021361A (ja) * | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
| US8519437B2 (en) | 2007-09-14 | 2013-08-27 | Cree, Inc. | Polarization doping in nitride based diodes |
| US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
| US20090283746A1 (en) * | 2008-05-15 | 2009-11-19 | Palo Alto Research Center Incorporated | Light-emitting devices with modulation doped active layers |
| JP5381439B2 (ja) * | 2009-07-15 | 2014-01-08 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体光素子 |
| US8604461B2 (en) | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
| US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| JP2011159771A (ja) * | 2010-01-29 | 2011-08-18 | Nec Corp | 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置 |
| US8575592B2 (en) | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
| JP2013115372A (ja) * | 2011-11-30 | 2013-06-10 | Sharp Corp | 半導体発光素子およびその製造方法、半導体発光素子の製造システム |
| KR102276422B1 (ko) | 2014-07-18 | 2021-07-12 | 삼성전자주식회사 | 투과형 고흡수 광 변조기 및 그 제조방법 |
| CN114038955B (zh) * | 2021-02-25 | 2022-12-16 | 重庆康佳光电技术研究院有限公司 | 发光芯片的外延结构、发光芯片及显示背板 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3064891B2 (ja) * | 1995-02-03 | 2000-07-12 | 住友化学工業株式会社 | ３−５族化合物半導体とその製造方法および発光素子 |
| JPH0997921A (ja) * | 1995-07-21 | 1997-04-08 | Sumitomo Chem Co Ltd | ３−５族化合物半導体の製造方法 |
| JPH09129920A (ja) * | 1995-10-27 | 1997-05-16 | Sumitomo Chem Co Ltd | 発光素子用３−５族化合物半導体及び発光素子 |
| JP3658112B2 (ja) * | 1995-11-06 | 2005-06-08 | 日亜化学工業株式会社 | 窒化物半導体レーザダイオード |
| JP3958818B2 (ja) * | 1997-01-08 | 2007-08-15 | 三菱電線工業株式会社 | 半導体発光素子及びその製造方法 |
-
1998
- 1998-10-22 JP JP30061598A patent/JP2000133883A/ja active Pending
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