JP2006324685A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006324685A5 JP2006324685A5 JP2006200847A JP2006200847A JP2006324685A5 JP 2006324685 A5 JP2006324685 A5 JP 2006324685A5 JP 2006200847 A JP2006200847 A JP 2006200847A JP 2006200847 A JP2006200847 A JP 2006200847A JP 2006324685 A5 JP2006324685 A5 JP 2006324685A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- type
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims 65
- 150000004767 nitrides Chemical class 0.000 claims 42
- 239000004065 semiconductor Substances 0.000 claims 42
- 239000000758 substrate Substances 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 14
- 238000000034 method Methods 0.000 claims 6
- 230000005496 eutectics Effects 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 230000001681 protective effect Effects 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 3
- 239000011247 coating layer Substances 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000006104 solid solution Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006200847A JP2006324685A (ja) | 2002-07-08 | 2006-07-24 | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002198761 | 2002-07-08 | ||
| JP2002218199 | 2002-07-26 | ||
| JP2002276309 | 2002-09-20 | ||
| JP2003004919 | 2003-01-10 | ||
| JP2006200847A JP2006324685A (ja) | 2002-07-08 | 2006-07-24 | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003190549A Division JP3985742B6 (ja) | 2002-07-08 | 2003-07-02 | 窒化物半導体発光ダイオード |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006324685A JP2006324685A (ja) | 2006-11-30 |
| JP2006324685A5 true JP2006324685A5 (enrdf_load_stackoverflow) | 2009-11-05 |
Family
ID=37544075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006200847A Pending JP2006324685A (ja) | 2002-07-08 | 2006-07-24 | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006324685A (enrdf_load_stackoverflow) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4116387B2 (ja) * | 2002-09-30 | 2008-07-09 | 株式会社東芝 | 半導体発光素子 |
| US7795054B2 (en) | 2006-12-08 | 2010-09-14 | Samsung Led Co., Ltd. | Vertical structure LED device and method of manufacturing the same |
| US9178121B2 (en) | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
| US7534638B2 (en) * | 2006-12-22 | 2009-05-19 | Philips Lumiled Lighting Co., Llc | III-nitride light emitting devices grown on templates to reduce strain |
| JP2008166311A (ja) * | 2006-12-26 | 2008-07-17 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
| JP2009099893A (ja) * | 2007-10-19 | 2009-05-07 | Showa Denko Kk | Ｉｉｉ族窒化物半導体発光素子 |
| JP5315070B2 (ja) * | 2008-02-07 | 2013-10-16 | 昭和電工株式会社 | 化合物半導体発光ダイオード |
| US20110127567A1 (en) | 2008-06-02 | 2011-06-02 | Korea University Industrial & Academic Collaboration Foundation | Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates |
| KR20100008123A (ko) * | 2008-07-15 | 2010-01-25 | 고려대학교 산학협력단 | 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자 |
| JP2010040838A (ja) * | 2008-08-06 | 2010-02-18 | Toshiba Corp | 発光装置 |
| KR101004858B1 (ko) * | 2008-11-06 | 2010-12-28 | 삼성엘이디 주식회사 | 화합물 반도체 발광 소자 및 그 제조방법 |
| US8188496B2 (en) | 2008-11-06 | 2012-05-29 | Samsung Led Co., Ltd. | Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same |
| JP5564799B2 (ja) * | 2009-01-28 | 2014-08-06 | 住友電気工業株式会社 | 窒化ガリウム系半導体電子デバイスを作製する方法 |
| JP2010192701A (ja) * | 2009-02-18 | 2010-09-02 | Showa Denko Kk | 発光ダイオード、発光ダイオードランプ及び発光ダイオードの製造方法 |
| US8580593B2 (en) * | 2009-09-10 | 2013-11-12 | Micron Technology, Inc. | Epitaxial formation structures and associated methods of manufacturing solid state lighting devices |
| JP5462032B2 (ja) * | 2010-03-04 | 2014-04-02 | Ｄｏｗａエレクトロニクス株式会社 | 金属被膜Ｓｉ基板ならびに接合型発光素子およびその製造方法 |
| JP5571988B2 (ja) * | 2010-03-26 | 2014-08-13 | パナソニック株式会社 | 接合方法 |
| JP5095840B2 (ja) * | 2011-04-26 | 2012-12-12 | 株式会社東芝 | 半導体発光素子 |
| JP5095848B1 (ja) * | 2011-05-18 | 2012-12-12 | 株式会社東芝 | 半導体発光素子 |
| JP5762901B2 (ja) * | 2011-09-15 | 2015-08-12 | 株式会社東芝 | 半導体発光素子、ウェーハ、半導体発光素子の製造方法及びウェーハの製造方法 |
| JP5398892B2 (ja) * | 2012-09-14 | 2014-01-29 | 株式会社東芝 | 半導体発光素子 |
| JP6260941B2 (ja) * | 2013-08-09 | 2018-01-24 | 日産自動車株式会社 | 半導体装置の製造方法 |
| CN114730818B (zh) * | 2019-11-26 | 2025-07-15 | 日亚化学工业株式会社 | 氮化物半导体元件 |
| CN111952424B (zh) * | 2020-08-11 | 2022-06-14 | 吴小明 | 一种具有P面钝化层的AlGaInN基LED制备方法 |
| CN120456680A (zh) * | 2025-07-10 | 2025-08-08 | 山西中科潞安紫外光电科技有限公司 | 具有纳米空气隙的外延片、外延片的制备方法及led芯片 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| JP3448441B2 (ja) * | 1996-11-29 | 2003-09-22 | 三洋電機株式会社 | 発光装置 |
| JP4146527B2 (ja) * | 1997-01-24 | 2008-09-10 | ローム株式会社 | 半導体発光素子およびその製法 |
| JP3914615B2 (ja) * | 1997-08-19 | 2007-05-16 | 住友電気工業株式会社 | 半導体発光素子及びその製造方法 |
| JP3469484B2 (ja) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JP3614070B2 (ja) * | 2000-01-17 | 2005-01-26 | 日亜化学工業株式会社 | 窒化物半導体発光ダイオード |
-
2006
- 2006-07-24 JP JP2006200847A patent/JP2006324685A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006324685A5 (enrdf_load_stackoverflow) | ||
| JP6917417B2 (ja) | 光電素子及びその製造方法 | |
| US8334153B2 (en) | Semiconductor light emitting device and method of fabricating semiconductor light emitting device | |
| CN102484185B (zh) | 半导体发光二极管及其制造方法 | |
| CN101026213B (zh) | 发光器件及其制造方法 | |
| KR100721147B1 (ko) | 수직구조 질화갈륨계 발광다이오드 소자 | |
| JP5095785B2 (ja) | 半導体発光素子及びその製造方法 | |
| KR100910964B1 (ko) | 오믹 전극 및 이의 형성 방법 | |
| JP2008508720A5 (enrdf_load_stackoverflow) | ||
| JP2011066461A (ja) | 半導体発光素子 | |
| JP2003086839A (ja) | 窒化物半導体発光素子およびその製造方法 | |
| JP2011040739A (ja) | 垂直型発光ダイオード及びその製造方法 | |
| JP2006066903A (ja) | 半導体発光素子用正極 | |
| TWI230472B (en) | Semiconductor light emitting device and the manufacturing method thereof | |
| JP2009176781A (ja) | ＧａＮ系ＬＥＤチップおよびＧａＮ系ＬＥＤチップの製造方法 | |
| KR101510382B1 (ko) | 수직구조의 그룹 3족 질화물계 반도체 발광다이오드 소자및 제조방법 | |
| KR101534846B1 (ko) | 수직구조의 그룹 3족 질화물계 반도체 발광다이오드 소자및 제조방법 | |
| KR101499954B1 (ko) | 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및제조방법 | |
| JP2017069282A (ja) | 半導体発光素子及びその製造方法 | |
| JP2012510724A (ja) | ３族窒化物半導体発光素子 | |
| KR101526566B1 (ko) | 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및제조방법 | |
| KR101499953B1 (ko) | 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및제조방법 | |
| KR101550913B1 (ko) | 수직구조의 그룹 3족 질화물계 반도체 발광다이오드 소자및 제조방법 | |
| US20240282890A1 (en) | Light emitting element and manufacturing method thereof | |
| KR101205831B1 (ko) | 반도체 발광소자 및 그 제조방법 |