JP2000114527A5 - - Google Patents
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- Publication number
- JP2000114527A5 JP2000114527A5 JP1998255497A JP25549798A JP2000114527A5 JP 2000114527 A5 JP2000114527 A5 JP 2000114527A5 JP 1998255497 A JP1998255497 A JP 1998255497A JP 25549798 A JP25549798 A JP 25549798A JP 2000114527 A5 JP2000114527 A5 JP 2000114527A5
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon film
- semiconductor device
- film
- region
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010408 film Substances 0.000 description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000001069 Raman spectroscopy Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000001237 Raman spectrum Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000003392 Curcuma domestica Nutrition 0.000 description 1
- 244000008991 Curcuma longa Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 235000003373 curcuma longa Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000013976 turmeric Nutrition 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25549798A JP4376331B2 (ja) | 1998-08-07 | 1998-09-09 | 半導体装置の作製方法 |
| US09/369,158 US6559036B1 (en) | 1998-08-07 | 1999-08-06 | Semiconductor device and method of manufacturing the same |
| US09/908,727 US7186600B2 (en) | 1998-08-07 | 2001-07-20 | Semiconductor device and method of manufacturing the same |
| US11/653,951 US7847294B2 (en) | 1998-08-07 | 2007-01-17 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-225067 | 1998-08-07 | ||
| JP22506798 | 1998-08-07 | ||
| JP25549798A JP4376331B2 (ja) | 1998-08-07 | 1998-09-09 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000114527A JP2000114527A (ja) | 2000-04-21 |
| JP2000114527A5 true JP2000114527A5 (cg-RX-API-DMAC10.html) | 2005-10-27 |
| JP4376331B2 JP4376331B2 (ja) | 2009-12-02 |
Family
ID=26526417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25549798A Expired - Fee Related JP4376331B2 (ja) | 1998-08-07 | 1998-09-09 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4376331B2 (cg-RX-API-DMAC10.html) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4841740B2 (ja) * | 2000-04-26 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4827324B2 (ja) * | 2000-06-12 | 2011-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2002083974A (ja) * | 2000-06-19 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP4993822B2 (ja) * | 2000-06-19 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6770518B2 (en) | 2001-01-29 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| SG114530A1 (en) | 2001-02-28 | 2005-09-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| TW550648B (en) | 2001-07-02 | 2003-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| JP4646531B2 (ja) * | 2004-03-05 | 2011-03-09 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及びその作製方法、並びに前記薄膜トランジスタを用いた電子機器 |
| JP2006216891A (ja) * | 2005-02-07 | 2006-08-17 | Tokyo Univ Of Agriculture & Technology | 薄膜素子構造の作製方法、及び薄膜素子構造作製用の機能性基体 |
| JP5250186B2 (ja) * | 2005-05-31 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5107541B2 (ja) * | 2006-08-22 | 2012-12-26 | ルネサスエレクトロニクス株式会社 | 絶縁膜形成方法および半導体装置の製造方法 |
| JP2008243975A (ja) * | 2007-03-26 | 2008-10-09 | Japan Steel Works Ltd:The | アモルファス薄膜の結晶化方法および結晶化装置 |
| KR100875432B1 (ko) * | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
| KR100889626B1 (ko) | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
| KR100889627B1 (ko) | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
| KR100982310B1 (ko) | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
| KR100989136B1 (ko) | 2008-04-11 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
| KR101009429B1 (ko) * | 2008-04-23 | 2011-01-19 | 주식회사 엔씰텍 | 다결정 실리콘막, 이를 포함하는 박막트랜지스터, 및 이의제조방법 |
| KR101002666B1 (ko) | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
| WO2012120775A1 (ja) | 2011-03-04 | 2012-09-13 | パナソニック株式会社 | 結晶性評価方法、結晶性評価装置、及びそのコンピュータソフト |
-
1998
- 1998-09-09 JP JP25549798A patent/JP4376331B2/ja not_active Expired - Fee Related
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