JP4376331B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4376331B2
JP4376331B2 JP25549798A JP25549798A JP4376331B2 JP 4376331 B2 JP4376331 B2 JP 4376331B2 JP 25549798 A JP25549798 A JP 25549798A JP 25549798 A JP25549798 A JP 25549798A JP 4376331 B2 JP4376331 B2 JP 4376331B2
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Japan
Prior art keywords
film
polysilicon film
region
atmosphere
forming
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Expired - Fee Related
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JP25549798A
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English (en)
Japanese (ja)
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JP2000114527A (ja
JP2000114527A5 (cg-RX-API-DMAC10.html
Inventor
久 大谷
圭恵 高野
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP25549798A priority Critical patent/JP4376331B2/ja
Priority to US09/369,158 priority patent/US6559036B1/en
Publication of JP2000114527A publication Critical patent/JP2000114527A/ja
Priority to US09/908,727 priority patent/US7186600B2/en
Publication of JP2000114527A5 publication Critical patent/JP2000114527A5/ja
Priority to US11/653,951 priority patent/US7847294B2/en
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Publication of JP4376331B2 publication Critical patent/JP4376331B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Recrystallisation Techniques (AREA)
JP25549798A 1998-08-07 1998-09-09 半導体装置の作製方法 Expired - Fee Related JP4376331B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP25549798A JP4376331B2 (ja) 1998-08-07 1998-09-09 半導体装置の作製方法
US09/369,158 US6559036B1 (en) 1998-08-07 1999-08-06 Semiconductor device and method of manufacturing the same
US09/908,727 US7186600B2 (en) 1998-08-07 2001-07-20 Semiconductor device and method of manufacturing the same
US11/653,951 US7847294B2 (en) 1998-08-07 2007-01-17 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-225067 1998-08-07
JP22506798 1998-08-07
JP25549798A JP4376331B2 (ja) 1998-08-07 1998-09-09 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000114527A JP2000114527A (ja) 2000-04-21
JP2000114527A5 JP2000114527A5 (cg-RX-API-DMAC10.html) 2005-10-27
JP4376331B2 true JP4376331B2 (ja) 2009-12-02

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JP25549798A Expired - Fee Related JP4376331B2 (ja) 1998-08-07 1998-09-09 半導体装置の作製方法

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JP (1) JP4376331B2 (cg-RX-API-DMAC10.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4841740B2 (ja) * 2000-04-26 2011-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4827324B2 (ja) * 2000-06-12 2011-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002083974A (ja) * 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP4993822B2 (ja) * 2000-06-19 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6770518B2 (en) 2001-01-29 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
SG114530A1 (en) 2001-02-28 2005-09-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
TW550648B (en) 2001-07-02 2003-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4646531B2 (ja) * 2004-03-05 2011-03-09 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその作製方法、並びに前記薄膜トランジスタを用いた電子機器
JP2006216891A (ja) * 2005-02-07 2006-08-17 Tokyo Univ Of Agriculture & Technology 薄膜素子構造の作製方法、及び薄膜素子構造作製用の機能性基体
JP5250186B2 (ja) * 2005-05-31 2013-07-31 株式会社半導体エネルギー研究所 半導体装置
JP5107541B2 (ja) * 2006-08-22 2012-12-26 ルネサスエレクトロニクス株式会社 絶縁膜形成方法および半導体装置の製造方法
JP2008243975A (ja) * 2007-03-26 2008-10-09 Japan Steel Works Ltd:The アモルファス薄膜の結晶化方法および結晶化装置
KR100875432B1 (ko) * 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101009429B1 (ko) * 2008-04-23 2011-01-19 주식회사 엔씰텍 다결정 실리콘막, 이를 포함하는 박막트랜지스터, 및 이의제조방법
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
WO2012120775A1 (ja) 2011-03-04 2012-09-13 パナソニック株式会社 結晶性評価方法、結晶性評価装置、及びそのコンピュータソフト

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