ITMI920845A0 - Struttura di interconnessione di un dispositivo a circuito integrato asemicondutture e suo prcedimento di fabbricazione - Google Patents

Struttura di interconnessione di un dispositivo a circuito integrato asemicondutture e suo prcedimento di fabbricazione

Info

Publication number
ITMI920845A0
ITMI920845A0 IT92MI845A ITMI920845A ITMI920845A0 IT MI920845 A0 ITMI920845 A0 IT MI920845A0 IT 92MI845 A IT92MI845 A IT 92MI845A IT MI920845 A ITMI920845 A IT MI920845A IT MI920845 A0 ITMI920845 A0 IT MI920845A0
Authority
IT
Italy
Prior art keywords
asemicopipe
integrated circuit
circuit device
interconnection structure
manufacturing procedure
Prior art date
Application number
IT92MI845A
Other languages
English (en)
Inventor
Shigeru Harada
Kazuhiro Ishimaru
Kimio Hagi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI920845A0 publication Critical patent/ITMI920845A0/it
Publication of ITMI920845A1 publication Critical patent/ITMI920845A1/it
Application granted granted Critical
Publication of IT1258284B publication Critical patent/IT1258284B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76858—After-treatment introducing at least one additional element into the layer by diffusing alloying elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
ITMI920845A 1991-04-09 1992-04-07 Struttura di interconnessione di un dispositivo a circuito integrato asemicondutture e suo prcedimento di fabbricazione IT1258284B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3076544A JP2533414B2 (ja) 1991-04-09 1991-04-09 半導体集積回路装置の配線接続構造およびその製造方法

Publications (3)

Publication Number Publication Date
ITMI920845A0 true ITMI920845A0 (it) 1992-04-07
ITMI920845A1 ITMI920845A1 (it) 1993-10-07
IT1258284B IT1258284B (it) 1996-02-22

Family

ID=13608211

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI920845A IT1258284B (it) 1991-04-09 1992-04-07 Struttura di interconnessione di un dispositivo a circuito integrato asemicondutture e suo prcedimento di fabbricazione

Country Status (5)

Country Link
US (2) US5341026A (it)
JP (1) JP2533414B2 (it)
KR (1) KR960009099B1 (it)
DE (1) DE4207916C2 (it)
IT (1) IT1258284B (it)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2811126B2 (ja) * 1991-05-02 1998-10-15 三菱電機株式会社 半導体集積回路装置の配線接続構造およびその製造方法
US5627345A (en) * 1991-10-24 1997-05-06 Kawasaki Steel Corporation Multilevel interconnect structure
JP2755035B2 (ja) * 1992-03-28 1998-05-20 ヤマハ株式会社 多層配線形成法
US5635763A (en) * 1993-03-22 1997-06-03 Sanyo Electric Co., Ltd. Semiconductor device having cap-metal layer
JP3401843B2 (ja) * 1993-06-21 2003-04-28 ソニー株式会社 半導体装置における多層配線の形成方法
JPH07135188A (ja) * 1993-11-11 1995-05-23 Toshiba Corp 半導体装置の製造方法
KR970007967B1 (en) * 1994-05-11 1997-05-19 Hyundai Electronics Ind Fabrication method and semiconductor device
JP3599199B2 (ja) * 1994-08-31 2004-12-08 富士通株式会社 多層配線を有する半導体装置の製造方法
JP2663887B2 (ja) * 1994-11-29 1997-10-15 日本電気株式会社 不揮発性半導体記憶装置
TW287313B (it) * 1995-02-20 1996-10-01 Matsushita Electric Ind Co Ltd
US5858184A (en) * 1995-06-07 1999-01-12 Applied Materials, Inc. Process for forming improved titanium-containing barrier layers
US5518959A (en) * 1995-08-24 1996-05-21 Taiwan Semiconductor Manufacturing Company Method for selectively depositing silicon oxide spacer layers
US5877087A (en) * 1995-11-21 1999-03-02 Applied Materials, Inc. Low temperature integrated metallization process and apparatus
US6066358A (en) * 1995-11-21 2000-05-23 Applied Materials, Inc. Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer
US6077781A (en) 1995-11-21 2000-06-20 Applied Materials, Inc. Single step process for blanket-selective CVD aluminum deposition
US6726776B1 (en) 1995-11-21 2004-04-27 Applied Materials, Inc. Low temperature integrated metallization process and apparatus
US6825132B1 (en) 1996-02-29 2004-11-30 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device including an insulation film on a conductive layer
JP3015752B2 (ja) * 1996-02-29 2000-03-06 三洋電機株式会社 半導体装置の製造方法
FR2747511B1 (fr) * 1996-04-10 1998-09-04 Sgs Thomson Microelectronics Interconnexions multicouches a faible capacite parasite laterale
US5843839A (en) * 1996-04-29 1998-12-01 Chartered Semiconductor Manufacturing, Ltd. Formation of a metal via using a raised metal plug structure
JPH1064902A (ja) * 1996-07-12 1998-03-06 Applied Materials Inc アルミニウム材料の成膜方法及び成膜装置
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
JPH1065118A (ja) * 1996-08-19 1998-03-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100383498B1 (ko) 1996-08-30 2003-08-19 산요 덴키 가부시키가이샤 반도체 장치 제조방법
US6288438B1 (en) 1996-09-06 2001-09-11 Sanyo Electric Co., Ltd. Semiconductor device including insulation film and fabrication method thereof
US6001420A (en) * 1996-09-23 1999-12-14 Applied Materials, Inc. Semi-selective chemical vapor deposition
JP3015767B2 (ja) * 1996-12-25 2000-03-06 三洋電機株式会社 半導体装置の製造方法及び半導体装置
US6537905B1 (en) 1996-12-30 2003-03-25 Applied Materials, Inc. Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
US6139697A (en) * 1997-01-31 2000-10-31 Applied Materials, Inc. Low temperature integrated via and trench fill process and apparatus
US5844318A (en) * 1997-02-18 1998-12-01 Micron Technology, Inc. Aluminum film for semiconductive devices
US6096637A (en) * 1997-02-25 2000-08-01 Compaq Computer Corporation Electromigration-resistant via structure
US6139905A (en) * 1997-04-11 2000-10-31 Applied Materials, Inc. Integrated CVD/PVD Al planarization using ultra-thin nucleation layers
EP0875923A3 (en) * 1997-04-30 1999-11-03 International Business Machines Corporation Multilayer metallization structure comprising a group IVA metal
US5932928A (en) * 1997-07-03 1999-08-03 Micron Technology, Inc. Semiconductor circuit interconnections and methods of making such interconnections
US6081033A (en) * 1997-07-29 2000-06-27 Micron Technology, Inc. Interconnections for semiconductor circuits
US5989623A (en) * 1997-08-19 1999-11-23 Applied Materials, Inc. Dual damascene metallization
US6828230B2 (en) 1997-09-12 2004-12-07 Micron Technology, Inc. Integrated circuit having conductive paths of different heights formed from the same layer structure and method for forming the same
US5994775A (en) * 1997-09-17 1999-11-30 Lsi Logic Corporation Metal-filled via/contact opening with thin barrier layers in integrated circuit structure for fast response, and process for making same
US6690084B1 (en) 1997-09-26 2004-02-10 Sanyo Electric Co., Ltd. Semiconductor device including insulation film and fabrication method thereof
JP2975934B2 (ja) 1997-09-26 1999-11-10 三洋電機株式会社 半導体装置の製造方法及び半導体装置
US6120842A (en) * 1997-10-21 2000-09-19 Texas Instruments Incorporated TiN+Al films and processes
US6376369B1 (en) 1998-02-12 2002-04-23 Micron Technology, Inc. Robust pressure aluminum fill process
US6794283B2 (en) 1998-05-29 2004-09-21 Sanyo Electric Co., Ltd. Semiconductor device and fabrication method thereof
US6136670A (en) * 1998-09-03 2000-10-24 Micron Technology, Inc. Semiconductor processing methods of forming contacts between electrically conductive materials
US6278153B1 (en) * 1998-10-19 2001-08-21 Nec Corporation Thin film capacitor formed in via
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
JP3179065B2 (ja) * 1999-02-02 2001-06-25 宮崎沖電気株式会社 半導体素子の製造方法
US6833623B2 (en) * 1999-08-11 2004-12-21 Micron Technology, Inc. Enhanced barrier liner formation for via
US6207558B1 (en) * 1999-10-21 2001-03-27 Applied Materials, Inc. Barrier applications for aluminum planarization
DE19958200B4 (de) * 1999-12-02 2006-07-06 Infineon Technologies Ag Mikroelektronische Struktur und Verfahren zu deren Herstellung
US6459156B1 (en) * 1999-12-22 2002-10-01 Motorola, Inc. Semiconductor device, a process for a semiconductor device, and a process for making a masking database
US6794705B2 (en) * 2000-12-28 2004-09-21 Infineon Technologies Ag Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
JP2003068848A (ja) * 2001-08-29 2003-03-07 Fujitsu Ltd 半導体装置及びその製造方法
US6917110B2 (en) * 2001-12-07 2005-07-12 Sanyo Electric Co., Ltd. Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer
US6797620B2 (en) * 2002-04-16 2004-09-28 Applied Materials, Inc. Method and apparatus for improved electroplating fill of an aperture
KR100463178B1 (ko) * 2002-04-19 2004-12-23 아남반도체 주식회사 반도체 소자의 금속배선 적층구조 형성 방법
KR100669688B1 (ko) * 2003-03-12 2007-01-18 삼성에스디아이 주식회사 박막트랜지스터 및 이를 구비한 평판표시소자
JP4038485B2 (ja) * 2003-03-12 2008-01-23 三星エスディアイ株式会社 薄膜トランジスタを備えた平板表示素子
KR100506943B1 (ko) * 2003-09-09 2005-08-05 삼성전자주식회사 식각정지막으로 연결홀의 저측면에 경사를 갖는 반도체소자의 제조 방법들
US7170176B2 (en) * 2003-11-04 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US8003536B2 (en) * 2009-03-18 2011-08-23 International Business Machines Corporation Electromigration resistant aluminum-based metal interconnect structure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4300149A (en) * 1979-09-04 1981-11-10 International Business Machines Corporation Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements
JPS58137231A (ja) * 1982-02-09 1983-08-15 Nec Corp 集積回路装置
JPS59212107A (ja) * 1983-05-18 1984-12-01 Ishikawajima Harima Heavy Ind Co Ltd ロ−ルの温度制御装置
JPS6190445A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
JP2581097B2 (ja) * 1987-08-31 1997-02-12 ソニー株式会社 半導体装置
JP2598335B2 (ja) * 1990-08-28 1997-04-09 三菱電機株式会社 半導体集積回路装置の配線接続構造およびその製造方法

Also Published As

Publication number Publication date
KR920020620A (ko) 1992-11-21
JPH04311058A (ja) 1992-11-02
JP2533414B2 (ja) 1996-09-11
US5480836A (en) 1996-01-02
US5341026A (en) 1994-08-23
IT1258284B (it) 1996-02-22
DE4207916C2 (de) 1994-06-30
KR960009099B1 (ko) 1996-07-10
DE4207916A1 (de) 1992-10-15
ITMI920845A1 (it) 1993-10-07

Similar Documents

Publication Publication Date Title
ITMI920845A0 (it) Struttura di interconnessione di un dispositivo a circuito integrato asemicondutture e suo prcedimento di fabbricazione
ITMI912260A0 (it) Struttura di interconnessione di un dispositivo a circuito integrato a semiconduttore e procedimento per la fabbricazione di essa
ITMI921651A0 (it) Dispositivo a semiconduttore e suo metodo di fabbricazione
ITMI920457A0 (it) Dispositivo di memoria integrato a semiconduttori utilizzante un circuito di prova
IT1176957B (it) Dispositivo a circuito integrato a semiconduttori e procedimento di fabbricazione di esso
ITMI950116A0 (it) Dispositivo a circuito integrato di semiconduttore
EP0516279A3 (en) An interconnection structure of a semiconductor device and a method of manufacturing thereof
DE69124735D1 (de) Integrierte Halbleiterschaltung
IT1248860B (it) Dispositivo a semiconduttore e suo metodo di fabbricazione
IT1277670B1 (it) Procedimento e dispositivo per fabbricare un circuito integrato a semiconduttori
DE59309544D1 (de) Integrierter cmos-halbleiterschaltkreis
DE69227885D1 (de) Integrierte Schaltung und elektronisches Gerät
EP0520470A3 (en) Output circuit and semiconductor integrated circuit device
KR930016406U (ko) 집적회로 팩 커넥터 장치
ITMI922707A1 (it) Struttura periferica di una piastrina come un dispositivo a semiconduttore e suo procedimento di fabbricazione
IT9021853A0 (it) Dispositivo di memoria a semiconduttore altamente integrato e suo metodo di fabbricazione
ITMI931871A1 (it) Circuito amplificatore perfezionato e dispositivo di memoria a semiconduttore impiegando lo stesso
ITTO930036A1 (it) Circuito integrato a semiconduttore e relativo procedimento di collaudo
ITMI940742A0 (it) Dispositivo semi-conduttore a circuito integrato
DE69124981T2 (de) Integrierte Halbleiterschaltung
ITMI911148A1 (it) Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione
KR900019203A (ko) 반도체 장치와 반도체 장치를 사용한 전자장치
IT1153732B (it) Dispositivo circuitale integrato a semiconduttore e relativo procedimento di fabbricazione
DE69317853T2 (de) Integrierte Halbleiterschaltung
EP0506094A3 (en) A semiconductor integrated circuit and a data processor

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970429