ITMI911148A1 - Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione - Google Patents

Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione

Info

Publication number
ITMI911148A1
ITMI911148A1 IT001148A ITMI911148A ITMI911148A1 IT MI911148 A1 ITMI911148 A1 IT MI911148A1 IT 001148 A IT001148 A IT 001148A IT MI911148 A ITMI911148 A IT MI911148A IT MI911148 A1 ITMI911148 A1 IT MI911148A1
Authority
IT
Italy
Prior art keywords
manufacturing
semiconductor device
contact structure
contact
semiconductor
Prior art date
Application number
IT001148A
Other languages
English (en)
Inventor
Jong-Bok Kim
Kyu-Pil Lee
Weon-Seok Yang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI911148A0 publication Critical patent/ITMI911148A0/it
Publication of ITMI911148A1 publication Critical patent/ITMI911148A1/it
Application granted granted Critical
Publication of IT1248595B publication Critical patent/IT1248595B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
ITMI911148A 1991-02-05 1991-04-24 Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione IT1248595B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910001977A KR920017227A (ko) 1991-02-05 1991-02-05 반도체장치의 층간콘택 구조 및 그 제조방법

Publications (3)

Publication Number Publication Date
ITMI911148A0 ITMI911148A0 (it) 1991-04-24
ITMI911148A1 true ITMI911148A1 (it) 1992-10-24
IT1248595B IT1248595B (it) 1995-01-19

Family

ID=19310789

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI911148A IT1248595B (it) 1991-02-05 1991-04-24 Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione

Country Status (6)

Country Link
JP (1) JPH0613468A (it)
KR (1) KR920017227A (it)
DE (1) DE4113775A1 (it)
FR (1) FR2672430A1 (it)
GB (1) GB2252668A (it)
IT (1) IT1248595B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4403604C2 (de) * 1994-02-05 1998-02-19 A B Elektronik Gmbh Vorrichtung zur Steuerung der Verstellung einer die Leistung einer Brennkraftmaschine bestimmenden Drosselklappe
US5770518A (en) * 1995-04-19 1998-06-23 Advanced Micro Devices, Inc. Semiconductor device and method of manufacturing without undercutting conductive lines
TW480636B (en) 1996-12-04 2002-03-21 Seiko Epson Corp Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
TW571373B (en) 1996-12-04 2004-01-11 Seiko Epson Corp Semiconductor device, circuit substrate, and electronic machine
KR20150021742A (ko) 2013-08-21 2015-03-03 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US9269610B2 (en) 2014-04-15 2016-02-23 Qualcomm Incorporated Pattern between pattern for low profile substrate
KR102610485B1 (ko) * 2018-11-22 2023-12-05 엘지디스플레이 주식회사 전계발광 표시장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162331A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Forming method for wiring pattern
JPS61193454A (ja) * 1985-02-20 1986-08-27 Mitsubishi Electric Corp 半導体装置
US4708770A (en) * 1986-06-19 1987-11-24 Lsi Logic Corporation Planarized process for forming vias in silicon wafers
DE3902693C2 (de) * 1988-01-30 1995-11-30 Toshiba Kawasaki Kk Mehrebenenverdrahtung für eine integrierte Halbleiterschaltungsanordnung und Verfahren zur Herstellung von Mehrebenenverdrahtungen für integrierte Halbleiterschaltungsanordnungen
US4916514A (en) * 1988-05-31 1990-04-10 Unisys Corporation Integrated circuit employing dummy conductors for planarity
JPH02222162A (ja) * 1989-02-22 1990-09-04 Sharp Corp 半導体装置の製造方法
JPH04127452A (ja) * 1989-06-30 1992-04-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP3229973B2 (ja) * 1993-02-12 2001-11-19 株式会社リコー 感熱記録材料

Also Published As

Publication number Publication date
FR2672430A1 (fr) 1992-08-07
JPH0613468A (ja) 1994-01-21
KR920017227A (ko) 1992-09-26
ITMI911148A0 (it) 1991-04-24
IT1248595B (it) 1995-01-19
GB2252668A (en) 1992-08-12
DE4113775A1 (de) 1992-08-13
GB9108853D0 (en) 1991-06-12

Similar Documents

Publication Publication Date Title
ITMI921651A0 (it) Dispositivo a semiconduttore e suo metodo di fabbricazione
ITMI920845A1 (it) Struttura di interconnessione di un dispositivo a circuito integrato a semicondutture e suo prcedimento di fabbricazione
IT1248860B (it) Dispositivo a semiconduttore e suo metodo di fabbricazione
ITMI912260A0 (it) Struttura di interconnessione di un dispositivo a circuito integrato a semiconduttore e procedimento per la fabbricazione di essa
ITMI921873A0 (it) Dispositivo semiconduttore e metodo per fabbicarlo
EP0516279A3 (en) An interconnection structure of a semiconductor device and a method of manufacturing thereof
KR910008793A (ko) 반도체장치 및 그 제조방법
IT1282087B1 (it) Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo
KR910007164A (ko) 반도체장치 및 그 제조방법
KR900019215A (ko) 반도체장치 및 그의 제조방법
KR900012335A (ko) 반도체장치의 제조방법
ITMI922707A1 (it) Struttura periferica di una piastrina come un dispositivo a semiconduttore e suo procedimento di fabbricazione
KR910010691A (ko) 반도체장치의 배선접촉구조 및 그 제조방법
KR900012331A (ko) 반도체장치의 제조방법
KR900012342A (ko) 반도체장치의 제조방법
IT9021853A0 (it) Dispositivo di memoria a semiconduttore altamente integrato e suo metodo di fabbricazione
IT1248814B (it) Dispositivo a semiconduttore e relativo metodo di fabbricazione
ITMI921562A0 (it) Wafer semiconduttore e suo procedimento di fabricazione
PL294400A1 (en) Method of manufacturing a semiconductor device and semiconductor device manufactured using such method
ITMI911148A1 (it) Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione
KR900015301A (ko) 반도체장치 및 그 제조방법
ITMI923001A0 (it) Dispositivo di memoria a semiconduttore e suo metodo di funzionamento
KR900015277A (ko) 반도체장치 및 그 제조방법
KR900019242A (ko) 반도체장치 및 그 제조방법
KR890015360A (ko) 반도체장치 및 그 제조방법

Legal Events

Date Code Title Description
0001 Granted