IT979867B - Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali - Google Patents
Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente ugualiInfo
- Publication number
- IT979867B IT979867B IT48835/73A IT4883573A IT979867B IT 979867 B IT979867 B IT 979867B IT 48835/73 A IT48835/73 A IT 48835/73A IT 4883573 A IT4883573 A IT 4883573A IT 979867 B IT979867 B IT 979867B
- Authority
- IT
- Italy
- Prior art keywords
- transistors
- pairs
- distribution
- circuit
- same characteristics
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2697772A JPS53675B2 (enrdf_load_stackoverflow) | 1972-03-16 | 1972-03-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT979867B true IT979867B (it) | 1974-09-30 |
Family
ID=12208203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT48835/73A IT979867B (it) | 1972-03-16 | 1973-03-15 | Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS53675B2 (enrdf_load_stackoverflow) |
| AU (1) | AU470370B2 (enrdf_load_stackoverflow) |
| CA (1) | CA972071A (enrdf_load_stackoverflow) |
| DE (1) | DE2313196A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2176129B3 (enrdf_load_stackoverflow) |
| GB (1) | GB1421924A (enrdf_load_stackoverflow) |
| IT (1) | IT979867B (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS586322B2 (ja) * | 1975-02-19 | 1983-02-04 | 株式会社日立製作所 | 熱帰還を考慮した集積回路 |
| JPS54107688A (en) * | 1978-02-13 | 1979-08-23 | Seiko Epson Corp | Semiconductor integrated circuit for temperature detection |
| US4467227A (en) * | 1981-10-29 | 1984-08-21 | Hughes Aircraft Company | Channel charge compensation switch with first order process independence |
| JPS5894232A (ja) * | 1981-11-30 | 1983-06-04 | Toshiba Corp | 半導体アナログスイッチ回路 |
| JPH0642537B2 (ja) * | 1985-11-15 | 1994-06-01 | 株式会社東芝 | 半導体装置 |
| DE3818533C2 (de) * | 1987-06-01 | 1994-05-26 | Mitsubishi Electric Corp | Feldeffekttransistor |
| JP3516307B2 (ja) * | 1992-12-24 | 2004-04-05 | ヒュンダイ エレクトロニクス アメリカ | デジタルトランジスタで構成される差動アナログトランジスタ |
| US5610429A (en) * | 1994-05-06 | 1997-03-11 | At&T Global Information Solutions Company | Differential analog transistors constructed from digital transistors |
| JP3523521B2 (ja) | 1998-04-09 | 2004-04-26 | 松下電器産業株式会社 | Ｍｏｓトランジスタ対装置 |
| JP2009188223A (ja) * | 2008-02-07 | 2009-08-20 | Seiko Instruments Inc | 半導体装置 |
| JP5945155B2 (ja) | 2012-05-07 | 2016-07-05 | 矢崎総業株式会社 | 電線の外部導体端子の接続構造 |
| JP5863892B2 (ja) * | 2014-07-07 | 2016-02-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
1972
- 1972-03-16 JP JP2697772A patent/JPS53675B2/ja not_active Expired
-
1973
- 1973-03-15 AU AU53341/73A patent/AU470370B2/en not_active Expired
- 1973-03-15 CA CA166,954A patent/CA972071A/en not_active Expired
- 1973-03-15 FR FR7309395A patent/FR2176129B3/fr not_active Expired
- 1973-03-15 IT IT48835/73A patent/IT979867B/it active
- 1973-03-16 GB GB1279773A patent/GB1421924A/en not_active Expired
- 1973-03-16 DE DE2313196A patent/DE2313196A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU5334173A (en) | 1974-09-19 |
| AU470370B2 (en) | 1976-03-11 |
| JPS4895194A (enrdf_load_stackoverflow) | 1973-12-06 |
| CA972071A (en) | 1975-07-29 |
| GB1421924A (en) | 1976-01-21 |
| JPS53675B2 (enrdf_load_stackoverflow) | 1978-01-11 |
| FR2176129A1 (enrdf_load_stackoverflow) | 1973-10-26 |
| DE2313196A1 (de) | 1973-10-04 |
| FR2176129B3 (enrdf_load_stackoverflow) | 1976-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL170349C (nl) | Halfgeleiderinrichting met complementaire veldeffecttransistoren. | |
| IT975001B (it) | Modulo circuitale comprendente un transistore a effetto di campo e un transistore bipolare | |
| NL7513422A (nl) | Transistorversterker met veldeffecttransistoren. | |
| BE772314A (fr) | Procede de fabrication d'embases de transistors | |
| IT962927B (it) | Transistore ad effetto di campo | |
| SE390241B (sv) | Transistorforsterkarkrets | |
| IT979867B (it) | Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali | |
| DE2255171B2 (de) | Isolierschicht-feldeffekttransistor | |
| BE824510A (fr) | Circuit de transistors combines | |
| BE809922A (fr) | Circuit dynamique a transistors mosfet | |
| IT990205B (it) | Circuito a transistori | |
| AT312069B (de) | Schaltungsanordnung mit zwei Transistoren | |
| IT950006B (it) | Transistor di potenza a radiofre quenza | |
| IT953974B (it) | Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo | |
| AT348589B (de) | Feldeffekttransistor | |
| IT1009962B (it) | Circuito logico transistore transistore modificato | |
| BE755991A (fr) | Circuit a transistors a courbe caracteristique amelioree | |
| AT376845B (de) | Speicher-feldeffekttransistor | |
| AT320741B (de) | Halbleiterbauelement mit Feldeffekttransistor | |
| IT1007011B (it) | Circuito integrato con transistori a effetto di campo | |
| BE791687A (fr) | Circuit amplificateur a transistors | |
| AR192212A1 (es) | Un circuito a transistor | |
| CH515583A (de) | Integriertes Speicherelement mit Feldeffekttransistoren | |
| FR1453559A (fr) | Circuit perfectionné à transistors | |
| NL165334C (nl) | Veldeffecttransistor. |