IT8320280A0 - Apparato per deposizione mediante scarica a bagliore, includente un catodo non disposto orizzontalmente. - Google Patents

Apparato per deposizione mediante scarica a bagliore, includente un catodo non disposto orizzontalmente.

Info

Publication number
IT8320280A0
IT8320280A0 IT8320280A IT2028083A IT8320280A0 IT 8320280 A0 IT8320280 A0 IT 8320280A0 IT 8320280 A IT8320280 A IT 8320280A IT 2028083 A IT2028083 A IT 2028083A IT 8320280 A0 IT8320280 A0 IT 8320280A0
Authority
IT
Italy
Prior art keywords
cathode
deposition apparatus
glow discharge
discharge deposition
arrangement horizontally
Prior art date
Application number
IT8320280A
Other languages
English (en)
Other versions
IT1160835B (it
Inventor
Prem Nath
David Attilio Gattuso
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IT8320280A0 publication Critical patent/IT8320280A0/it
Application granted granted Critical
Publication of IT1160835B publication Critical patent/IT1160835B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
IT20280/83A 1982-03-29 1983-03-24 Apparato per deposizione mediante scarica a bagliore,includente un catado non disposto orizzontalmente IT1160835B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/363,256 US4423701A (en) 1982-03-29 1982-03-29 Glow discharge deposition apparatus including a non-horizontally disposed cathode

Publications (2)

Publication Number Publication Date
IT8320280A0 true IT8320280A0 (it) 1983-03-24
IT1160835B IT1160835B (it) 1987-03-11

Family

ID=23429485

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20280/83A IT1160835B (it) 1982-03-29 1983-03-24 Apparato per deposizione mediante scarica a bagliore,includente un catado non disposto orizzontalmente

Country Status (9)

Country Link
US (1) US4423701A (it)
JP (1) JPS58174570A (it)
AU (1) AU563805B2 (it)
CA (1) CA1191975A (it)
DE (1) DE3310797A1 (it)
FR (1) FR2524199A1 (it)
GB (1) GB2118212B (it)
IT (1) IT1160835B (it)
NL (1) NL8301062A (it)

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DE3244391A1 (de) * 1982-12-01 1984-06-07 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zur beschichtung von substraten durch plasmapolymerisation
JPH0719748B2 (ja) * 1984-02-17 1995-03-06 鐘淵化学工業株式会社 製膜装置
JPS60191269A (ja) * 1984-03-13 1985-09-28 Sharp Corp 電子写真感光体製造装置
FR2589168B1 (fr) * 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
US5366554A (en) * 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
US4829189A (en) * 1986-07-18 1989-05-09 Sando Iron Works Co., Ltd. Apparatus for low-temperature plasma treatment of sheet material
US4920917A (en) * 1987-03-18 1990-05-01 Teijin Limited Reactor for depositing a layer on a moving substrate
JPH0193129A (ja) * 1987-10-02 1989-04-12 Mitsubishi Electric Corp 化学気相成長装置
JPH0351971Y2 (it) * 1988-05-12 1991-11-08
JPH05804A (ja) * 1990-08-01 1993-01-08 Sumitomo Electric Ind Ltd 大面積複合酸化物超電導薄膜の成膜装置
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
DE4313284A1 (de) * 1993-04-23 1994-10-27 Leybold Ag Spaltschleuse für das Ein- oder Ausbringen von Substraten von der einen in eine benachbarte Behandlungskammer
DE9407482U1 (de) * 1994-05-05 1994-10-06 Balzers und Leybold Deutschland Holding AG, 63450 Hanau Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken
FR2786208B1 (fr) * 1998-11-25 2001-02-09 Centre Nat Rech Scient Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
US6610150B1 (en) 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
EP1209252A3 (en) * 2000-09-15 2002-11-27 Shipley Co. L.L.C. Continuous coating apparatus
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US20040040506A1 (en) * 2002-08-27 2004-03-04 Ovshinsky Herbert C. High throughput deposition apparatus
US20060278163A1 (en) * 2002-08-27 2006-12-14 Ovshinsky Stanford R High throughput deposition apparatus with magnetic support
CA2586965A1 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pallet based system for forming thin-film solar cells
WO2006053218A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition
JP5194255B2 (ja) * 2006-03-02 2013-05-08 国立大学法人岩手大学 二次電池及びその製造方法並びにシステム
US8061686B2 (en) * 2009-04-03 2011-11-22 Uniter Solar Ovonic LLC Pinch valve
US20100252605A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Web support assembly
US20100252602A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Continuous processing system with pinch valve
US20100252606A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Roll-to-roll deposition apparatus with improved web transport system
EP2368860A1 (de) * 2010-03-01 2011-09-28 Saint-Gobain Glass France Vorrichtung und Verfahren zur Substratprozessierung
WO2011137371A2 (en) * 2010-04-30 2011-11-03 Applied Materials, Inc. Vertical inline cvd system
US8861167B2 (en) 2011-05-12 2014-10-14 Global Plasma Solutions, Llc Bipolar ionization device

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DE1419289A1 (de) * 1961-01-26 1968-12-12 Siemens Ag Verfahren zum Herstellen dotierter Halbleiterkoerper
GB1141551A (en) * 1966-01-24 1969-01-29 Dow Corning A method of coating metallic filaments
DE1621358A1 (de) * 1966-11-08 1971-04-29 Texas Instruments Inc Verfahren zur Aufbringung duenner Filme aus dielektrischem Material auf ein Substrat
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US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
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JPS6029295B2 (ja) * 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法
JPS5675565A (en) * 1979-11-20 1981-06-22 Sumitomo Electric Ind Ltd Manufacturing method of thin film
JPS5934421B2 (ja) * 1979-11-29 1984-08-22 住友電気工業株式会社 薄膜製造法
JPS5680128A (en) * 1979-12-05 1981-07-01 Sumitomo Electric Ind Ltd Manufacture of thin film
DE2950997C2 (de) * 1979-12-18 1986-10-09 Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa Vorrichtung zum Beschichten
JPS56111274A (en) * 1980-02-07 1981-09-02 Sanyo Electric Co Ltd Manufacture of photoelectromotive force element
JPS56114387A (en) * 1980-02-13 1981-09-08 Sanyo Electric Co Ltd Manufacture of photovoltaic force element
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
JPS5742118A (en) * 1980-08-27 1982-03-09 Mitsubishi Electric Corp Plasma cvd device
US4438188A (en) * 1981-06-15 1984-03-20 Fuji Electric Company, Ltd. Method for producing photosensitive film for electrophotography
JPS5848416A (ja) * 1981-09-16 1983-03-22 Fuji Electric Corp Res & Dev Ltd 量産型薄膜生成装置

Also Published As

Publication number Publication date
GB8308249D0 (en) 1983-05-05
US4423701A (en) 1984-01-03
CA1191975A (en) 1985-08-13
NL8301062A (nl) 1983-10-17
GB2118212B (en) 1986-07-09
AU1264183A (en) 1983-10-06
DE3310797A1 (de) 1983-09-29
JPH0468390B2 (it) 1992-11-02
IT1160835B (it) 1987-03-11
FR2524199A1 (fr) 1983-09-30
AU563805B2 (en) 1987-07-23
GB2118212A (en) 1983-10-26
JPS58174570A (ja) 1983-10-13

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19990331