JPS559427A - Manufacturing device of silicon nitride film - Google Patents
Manufacturing device of silicon nitride filmInfo
- Publication number
- JPS559427A JPS559427A JP8202878A JP8202878A JPS559427A JP S559427 A JPS559427 A JP S559427A JP 8202878 A JP8202878 A JP 8202878A JP 8202878 A JP8202878 A JP 8202878A JP S559427 A JPS559427 A JP S559427A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gas
- blown
- film thickness
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To improve the film thickness distribution and reduce the generation of the scattering of unreached material by approaching the jet nozzle of gas blowing out of the center of one of the flat electrodes to the other electrode and changing the direction of gas blow.
CONSTITUTION: An opposing counter electrode 2 and a sample holding electrode 3 are arranged in a vacuum vessel 1 and sample substrates 8 are mounted on the electrode 3. After evacuating air from the vessel 1, material gases SiH4, NH3 and N2 are blown in from a gas introducing pipe 5, high frequency electric power is applied between the electrodes 2 and 3 to produce glow discharges and Si3N4 films are formed on the substrates 8. In this case, the jet holes 7 of the pipe 5 arranged in the center of the electrode 3 are arranged closer than the electrode 3 to the other electrode 2 and something like a gas jet cap 6 is provided, and the gases are introduced flowing downwards or horizontally when blown to the electrode 2. By so doing, Si3N4 film of good film thickness distribution and little pinholes can be formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8202878A JPS559427A (en) | 1978-07-07 | 1978-07-07 | Manufacturing device of silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8202878A JPS559427A (en) | 1978-07-07 | 1978-07-07 | Manufacturing device of silicon nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS559427A true JPS559427A (en) | 1980-01-23 |
Family
ID=13763063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8202878A Pending JPS559427A (en) | 1978-07-07 | 1978-07-07 | Manufacturing device of silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS559427A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
| JPS59115561A (en) * | 1982-12-23 | 1984-07-04 | Stanley Electric Co Ltd | Manufacture of thin film transistor |
| JPS6169282U (en) * | 1984-10-08 | 1986-05-12 | ||
| JPS6262529A (en) * | 1985-09-12 | 1987-03-19 | Toppan Printing Co Ltd | Forming method for silicon nitride film |
-
1978
- 1978-07-07 JP JP8202878A patent/JPS559427A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
| JPH0468390B2 (en) * | 1982-03-29 | 1992-11-02 | Enaajii Konbaajon Debaisesu Inc | |
| JPS59115561A (en) * | 1982-12-23 | 1984-07-04 | Stanley Electric Co Ltd | Manufacture of thin film transistor |
| JPH0454992B2 (en) * | 1982-12-23 | 1992-09-01 | Stanley Electric Co Ltd | |
| JPS6169282U (en) * | 1984-10-08 | 1986-05-12 | ||
| JPS6262529A (en) * | 1985-09-12 | 1987-03-19 | Toppan Printing Co Ltd | Forming method for silicon nitride film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100219873B1 (en) | Apparatus and method for plasma processing | |
| JPS56158873A (en) | Dry etching method | |
| KR910020193A (en) | Plasma etching apparatus and method for forming a conductive coating on the inner metal surface to protect the inner metal surface of the chamber from chemical corrosion | |
| JPS5684476A (en) | Etching method of gas plasma | |
| JPS559427A (en) | Manufacturing device of silicon nitride film | |
| JPS5591968A (en) | Film forming method by glow discharge | |
| JPS52104062A (en) | Production of surface protection film of electronic parts | |
| ES8603114A1 (en) | Cathode assembly for glow discharge deposition apparatus. | |
| JPS57157525A (en) | Surface treating method | |
| JPS5721813A (en) | Forming method for film | |
| JPS55101853A (en) | Method of fabricating comparison electrode with fet | |
| JPS5559741A (en) | Preparation of semiconductor device | |
| JPS5710629A (en) | Plasma treatment of hollow body | |
| JPS56125855A (en) | Manufacture of semiconductor device | |
| JPS5651878A (en) | Manufacture of mis composition amorphous silicon solar cell | |
| CN219514278U (en) | Tobacco sheet plasma surface jet treatment device | |
| JPS5745226A (en) | Manufacture of thin film semiconductor | |
| JPS56121629A (en) | Film forming method | |
| JP2798225B2 (en) | High frequency plasma CVD equipment | |
| JPS54128283A (en) | Manufacture of semiconductor device | |
| JPS556410A (en) | Plasma gas phase reactor | |
| JPS5732637A (en) | Dry etching apparatus | |
| JPS54122697A (en) | Method and apparatus for forming silicon oxide ion | |
| JPS5458362A (en) | Dry etching method | |
| JPS564285A (en) | Manufacture of planar type semiconductor device |