JPS56111274A - Manufacture of photoelectromotive force element - Google Patents
Manufacture of photoelectromotive force elementInfo
- Publication number
- JPS56111274A JPS56111274A JP1437680A JP1437680A JPS56111274A JP S56111274 A JPS56111274 A JP S56111274A JP 1437680 A JP1437680 A JP 1437680A JP 1437680 A JP1437680 A JP 1437680A JP S56111274 A JPS56111274 A JP S56111274A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- intermediary
- valves
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a homogeneous amorphous Si film by rotating the surface of a substrate whereon the film is formed without directing the same upward in the case when the film is formed to serve as the photoelectromotive force element on the substrate by plasma reaction. CONSTITUTION:A plasma reaction chamber 8 having a valve 19 to a vacuum exhaustion system is connected with a silane gas producer 16 through the intermediary of valves 13 and 12, with a diborane gas producer 17 through the intermediary of valves 14 and 12 and with a phosphine gas producer 18 through the intermediary of valves 15 and 12, respectively. Moreover, in the reaction chamber 8, the 1st electrode 9 and the 2nd electrode 10 are arranged at a prescribed interval and are connected with a high-frequency power source 11 for generating a high-frequency electric field. In the device thus constituted, the transparent insulation substrate 1 made of glass and the like is fitted to the lower surface of the electrode 9, with its surface to be coated with the film faced downward, and the end of a metal supporting shaft 21 provided at the electrode 9 and projected out of the reaction chamber 8 is rotated by a motor 22. In this way, the local ununiformity of plasma reaction is removed and adhesion of granular Si or the like is avoided, whereby the uniform and excellent film is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1437680A JPS56111274A (en) | 1980-02-07 | 1980-02-07 | Manufacture of photoelectromotive force element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1437680A JPS56111274A (en) | 1980-02-07 | 1980-02-07 | Manufacture of photoelectromotive force element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56111274A true JPS56111274A (en) | 1981-09-02 |
Family
ID=11859322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1437680A Pending JPS56111274A (en) | 1980-02-07 | 1980-02-07 | Manufacture of photoelectromotive force element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56111274A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2524199A1 (en) * | 1982-03-29 | 1983-09-30 | Energy Conversion Devices Inc | LUMINESCENT DISCHARGE DEPOSITION APPARATUS INCLUDING A NON-HORIZONTALLY ARRANGED CATHODE |
-
1980
- 1980-02-07 JP JP1437680A patent/JPS56111274A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2524199A1 (en) * | 1982-03-29 | 1983-09-30 | Energy Conversion Devices Inc | LUMINESCENT DISCHARGE DEPOSITION APPARATUS INCLUDING A NON-HORIZONTALLY ARRANGED CATHODE |
| JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
| JPH0468390B2 (en) * | 1982-03-29 | 1992-11-02 | Enaajii Konbaajon Debaisesu Inc |
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