JPS5768018A - Manufacture of semiamorphous semiconductor - Google Patents

Manufacture of semiamorphous semiconductor

Info

Publication number
JPS5768018A
JPS5768018A JP55143886A JP14388680A JPS5768018A JP S5768018 A JPS5768018 A JP S5768018A JP 55143886 A JP55143886 A JP 55143886A JP 14388680 A JP14388680 A JP 14388680A JP S5768018 A JPS5768018 A JP S5768018A
Authority
JP
Japan
Prior art keywords
tube
periphery
film
1atm
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55143886A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55143886A priority Critical patent/JPS5768018A/en
Publication of JPS5768018A publication Critical patent/JPS5768018A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain a film having stable free energy by introducing silicide or germanium gas having association or polymerization structure in the reaction system of hydrogen suspension atmosphere under reduced pressure less than 1atm and growing amorphous or semicrystalline columnar semiconductor film on the growing surface to be covered at lower than 600 deg.C. CONSTITUTION:Substrates 10 of clustered conductors or insulators arranged at an interval on a quartz boat 9 are contained in a reaction tube 7 having a larger diameter than an activation chamber 1 of reactive gas disposed at the end, and a resistance heating oven 8 having power sufficient to apply enough induction energy to the reactive gas is provided at the periphery of the tube 7. The outer periphery of the chamber 1 is cooled with Freon or the like, an isolator matching unit 2 connected to an oscillator is wound on the periphery, and the interior of the tube 7 is reduced to lower than 1atm. by a vacuum pump 13 through a needle valve 11 and a stop valve 12. With the construction thus composed, the substrate 10 is maintained at lower than 600 deg.C, silane 4, silicon fluoride 5 and carrier gas 6 are flowed thereto, and a desired semiamorphous film is grown on the substrate.
JP55143886A 1980-10-15 1980-10-15 Manufacture of semiamorphous semiconductor Pending JPS5768018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55143886A JPS5768018A (en) 1980-10-15 1980-10-15 Manufacture of semiamorphous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55143886A JPS5768018A (en) 1980-10-15 1980-10-15 Manufacture of semiamorphous semiconductor

Publications (1)

Publication Number Publication Date
JPS5768018A true JPS5768018A (en) 1982-04-26

Family

ID=15349306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55143886A Pending JPS5768018A (en) 1980-10-15 1980-10-15 Manufacture of semiamorphous semiconductor

Country Status (1)

Country Link
JP (1) JPS5768018A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0140660A2 (en) * 1983-10-31 1985-05-08 Dow Corning Corporation Method of forming amorphous polymeric halosilane films and products produced therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0140660A2 (en) * 1983-10-31 1985-05-08 Dow Corning Corporation Method of forming amorphous polymeric halosilane films and products produced therefrom

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