IT1392502B1 - Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione - Google Patents

Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione

Info

Publication number
IT1392502B1
IT1392502B1 ITMI2008A002363A ITMI20082363A IT1392502B1 IT 1392502 B1 IT1392502 B1 IT 1392502B1 IT MI2008A002363 A ITMI2008A002363 A IT MI2008A002363A IT MI20082363 A ITMI20082363 A IT MI20082363A IT 1392502 B1 IT1392502 B1 IT 1392502B1
Authority
IT
Italy
Prior art keywords
photodiod
double
integrated
sensor including
integration process
Prior art date
Application number
ITMI2008A002363A
Other languages
English (en)
Inventor
Salvatore Leonardi
Anna Muscara
Maria Eloisa Castagna
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITMI2008A002363A priority Critical patent/IT1392502B1/it
Priority to US12/649,248 priority patent/US20100163709A1/en
Publication of ITMI20082363A1 publication Critical patent/ITMI20082363A1/it
Application granted granted Critical
Publication of IT1392502B1 publication Critical patent/IT1392502B1/it
Priority to US13/802,081 priority patent/US20130264949A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10Controlling the light source
    • H05B47/105Controlling the light source in response to determined parameters
    • H05B47/11Controlling the light source in response to determined parameters by determining the brightness or colour temperature of ambient light
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40Control techniques providing energy savings, e.g. smart controller or presence detection
ITMI2008A002363A 2008-12-31 2008-12-31 Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione IT1392502B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITMI2008A002363A IT1392502B1 (it) 2008-12-31 2008-12-31 Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
US12/649,248 US20100163709A1 (en) 2008-12-31 2009-12-29 Sensor comprising at least a vertical double junction photodiode, being integrated on a semiconductor substrate and corresponding integration process
US13/802,081 US20130264949A1 (en) 2008-12-31 2013-03-13 Sensor comprising at least a vertical double junction photodiode, being integrated on a semiconductor substrate and corresponding integration process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI2008A002363A IT1392502B1 (it) 2008-12-31 2008-12-31 Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione

Publications (2)

Publication Number Publication Date
ITMI20082363A1 ITMI20082363A1 (it) 2010-07-01
IT1392502B1 true IT1392502B1 (it) 2012-03-09

Family

ID=40940500

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2008A002363A IT1392502B1 (it) 2008-12-31 2008-12-31 Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione

Country Status (2)

Country Link
US (2) US20100163709A1 (it)
IT (1) IT1392502B1 (it)

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* Cited by examiner, † Cited by third party
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US20100163759A1 (en) * 2008-12-31 2010-07-01 Stmicroelectronics S.R.L. Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
WO2012030998A1 (en) * 2010-09-05 2012-03-08 Newport Corporation Microprocessor based multi-junction detector system and method of use
FR3018954B1 (fr) * 2014-03-20 2017-07-21 Commissariat Energie Atomique Procede d'optimisation du rendement quantique d'une photodiode
US9462469B2 (en) 2014-04-21 2016-10-04 Arm Limited Systems and methods for short range wireless data transfer
CN111463226A (zh) * 2020-05-11 2020-07-28 矽力杰半导体技术(杭州)有限公司 光电集成器件及其制造方法

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Also Published As

Publication number Publication date
US20130264949A1 (en) 2013-10-10
US20100163709A1 (en) 2010-07-01
ITMI20082363A1 (it) 2010-07-01

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